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forward characteristics
相关语句
  正向特性
     Forward Characteristics of 6H-SiC Schottky Contacts
     6H-SiC Schottky二极管的正向特性
短句来源
     Analysis of the Forward Characteristics for Emitter-Switched Thyristor
     发射极开关晶闸管正向特性分析
短句来源
     The structure and potential distribution of silicon PIN photodetector are discussed in detail as well as the discussion on forward characteristics, reverse characteristics and light sensitive characteristics.
     对硅PIN光电探测器的结构及电势分布作了详细讨论,同时讨论了其正向特性、反向特性和光敏特性。
     Trends to various changes in forward characteristics of P-N junctions are presented to monitor the process quality of silicon solar on the basis of P-N junction theory.
     本文根据PN结理论提出用PN结正向特性各种变化趋势来直接监控工艺质量。
短句来源
     Merged PiN/Schottky Diode(MPS) has been introduced in this paper, which is a new device that keeps the forward characteristics of a schottky diode and the reverse property of a PN diode. MPS with high switching speed, high breakdown voltage, low reverse leakage current and low forward voltage drop is the best choice for power system.
     介绍一种具有肖特基正向特性和PN结反向特性的新型整流器混合PiN/Schottky二极管 (MPS) ,它速度快、击穿电压高、漏电流小、正向压降低 ,适合功率系统使用。
短句来源
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  “forward characteristics”译为未确定词的双语例句
     Computer Regression Anlaysis of Forward Characteristics of Schottky Barrier Diodes and Its Applications
     肖特基整流二极管正向特性的计算机回归分析及其应用
短句来源
     The application of MPS structure improves the reverse characteristics and preserves the forward characteristics of SBD. And the application of Silicon carbide enhances the advantage of MPS structure.
     MPS结构的应用,在保留SBD正向特性的同时,大大提高了其反向特性,而碳化硅材料的应用更加强化了MPS的这一优势。
短句来源
     Based on the previous studies and references of instances, the author differentiates and analyses relevant concepts and put forward characteristics of urban travel brand .
     论文在总结前人研究成果的基础之上,经过实例的参考对照,对城市旅游品牌的相关概念进行了辨析和基本特征的总结。
短句来源
     This paper carries out calculation and comparison on the strength and structure between keyless joint and key joint, and puts forward characteristics of keyless joint.
     就无键联接与有键联接的强度和结构进行计算与比较,并提出了无键联接的特点。
短句来源
     The electronics and information industry, born with the leap\|forward characteristics, will be the driving force for the leap\|forward development of Dalian industry.
     电子信息产品制造业具有与生俱来的跨越性,应成为推动大连工业跨越式发展的支柱。
短句来源
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  相似匹配句对
     The Forward Characteristics Simulation of EST
     发射极开关晶闸管正向特性数值分析
短句来源
     characteristics;
     三、发展的特点;
短句来源
     And the characteristics of the G.
     通过仿真和实验,也验证了G.
短句来源
     Its characteristics, corrosiveness and stability are put forward.
     重点阐述了降阻剂的选择,应注意降阻剂的降阻特性、腐蚀性和稳定性。
短句来源
     Leap-forward
     跨越式发展——2003年系统工作会议综述
短句来源
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  forward characteristics
The critical timetc is determined when the breakdown of the wave will occur at the cusp of the envelope of the intersectying forward characteristics.
      
Forward characteristics of these diodes are observed to obey a generalized Sah-Noyce-Shockley multiple level recombination model with four shallow levels and one deep level.
      
Forward characteristics of these diodes are observed to obey a generalized Sah-Noyce-Shockly multiple level recombination model with four shallow levels and one deep level.
      
For 50 nm thick Si1-xGex layers containing about 22% Ge, the forward characteristics of larger diodes are nearly ideal.
      
To accomplish this, we have first studied the TRMM/TMI forward characteristics.
      
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In this paper forward Ⅰ-Ⅴ characteristics were determined to identify the dominat current mechanisms and to calculate I01, I02, A1, A2 and the effective carrier lifetimes in the deplation region. Results show that the Voc and FF increase with the decreasing of I02 and A2 respectively.A number of dark region can be observed in EBIC determination where the induced current decreased dratically. The Electron prob analysis shows that the Fe, Si, Al impurity clusters are found in the p-GaAs region. Fe...

In this paper forward Ⅰ-Ⅴ characteristics were determined to identify the dominat current mechanisms and to calculate I01, I02, A1, A2 and the effective carrier lifetimes in the deplation region. Results show that the Voc and FF increase with the decreasing of I02 and A2 respectively.A number of dark region can be observed in EBIC determination where the induced current decreased dratically. The Electron prob analysis shows that the Fe, Si, Al impurity clusters are found in the p-GaAs region. Fe in GaAs substrate with concentration of 4×1015cm-3 is determined by flameless atomic adsorption spectropho-tometry.Having studied the junction characteristics a new procedure was developed for the preparation of the solar cell. High conversion efficiency of 18-19% at AM1 with a high Voc 1.01-1.05 and a high FF 0.81-0.82 were obtained together with the reduction in dark current and increasing in the effective minority lifetime.

本文报道了Ga_(1-x)Al_xAs/GaAs电池正向暗I—V特性,示出暗I—V曲线,I_(01)、I_(02)、A_1、A_2及扩展区少子有效扩散长度等计算值。确定了以复合电流为主要暗电流的电流输运机理。用双指数模型讨论了暗特性和输出特性的关系。获得了开路电压V_(oc)随I_(02)降低而提高,填充因子FF随A_2的降低而增加的实验结果。EB1C扫描照片示出GaAs电池的有源区中存在无数不规则黑区,单束感生电流在这些区域明显减弱。电子探针测出黑区为Fe、Si、Al的杂质团。非火焰原子吸收光谱测出GaAs衬底中含有4×10~(15)cm~(-3)的杂质铁。铁、硅杂质团是影响少子扩散长度和复合电流的主要因素。 通过改进工艺,降低了暗电流,提高了电池性能,V_(oc)(1.01-1.05)超过理论预期值,FF(0.81-0.82)达到理论预期值,转换效率(AM1)达18—19%。

Trends to various changes in forward characteristics of P-N junctions are presented to monitor the process quality of silicon solar on the basis of P-N junction theory. A method of directly measuring the total serial resistence of a single cell with the characteristic curve is also presented.It is simpler and more reliable than the conventional method .Finally the major reasons of the current leakage are discussed.

本文根据PN结理论提出用PN结正向特性各种变化趋势来直接监控工艺质量。同时提出在特性曲线上直接测量单片电池总串联内阻的方法,比传统的测量方法更简单、更可靠。最后讨论了影响电池漏电的主要原因。

The physical parameter models of power devices are simplified by introducing three fac-ton,which are related to the high doping concentrations,the complex scattering mechanisms and highinjection of carrieres.The simplified models are inserted into simulator GEDS and the simulation resultsshow that this simplification is right and effective,Dampod-Newton(DN)algorithm is used for thesimulation of the devices with high reverse bias,accompanied with a new set of scaling factors.The nu-merical relation between δ,which...

The physical parameter models of power devices are simplified by introducing three fac-ton,which are related to the high doping concentrations,the complex scattering mechanisms and highinjection of carrieres.The simplified models are inserted into simulator GEDS and the simulation resultsshow that this simplification is right and effective,Dampod-Newton(DN)algorithm is used for thesimulation of the devices with high reverse bias,accompanied with a new set of scaling factors.The nu-merical relation between δ,which determines the damping factor and the efficiency of DN algorithm isgiven in detail.Newton-Richardson(NR)algorithm is used for the analysis of the devices with high for-ward bies.The relation between n_(re),which is criterion for taking symbolic factorization and the efficiencyof NR algorithm is studied in detail.The presented results show that DN and NR algorithms are verysuitable for the analysis of the reverse and forward characteristics of power devices respectively.

针对功率器件二维数值分析的复杂性,引入修正因子 η_1、η_2和 η_3对常规器件物理参数模型进行简化和修正,使之能正确描述功率器件的有关物理机制.将所得模型以及针对功率器件高偏压工作特点而引入的一组新的归一化参数嵌入通用器件模拟器 GEDS 中,对高压平面结二极管的反向特性和 LIGT 的正向特性进行模拟,得到完全正确的结果.本文还深入研究了功率器件数值分析中的算法设计,发现 DN 法适宜求算器件的反向特性,NR 法适宜求算器件的正向特性.

 
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