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gan materials
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  gan材料
     GaN materials were grown on "GaNzilla",EMCORE's new 325mm GaN production rea ctor.
     在“GaNzilla” ,EMCORE公司的一种新型 32 5mm的GaN生产反应器中外延生长了GaN材料
短句来源
     Au\|GaN Schottky junction has been fabricated on n\|GaN materials by MOCVD and MBE. I\|V characteristics of the Schottky junctions have been determined at room temperature.
     在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性 .
短句来源
     In this paper,research about Ohmic contacts on p-type GaN is reported. With Au and Cr/Au deposited on p-type GaN materials and appropriate annealing process,good Ohmic contacts have been obtained.
     本文介绍了利用金属Au、Cr/Au在p型GaN材料上做了接触性能研究,通过退火等实验获得了较理想的欧姆接触,测试后计算出Au、Cr/Au与p型GaN材料间的接触电阻率分别为7.88×10-2Ω.
短句来源
     Otherwise, Hall measurement plays an important part in testing the electrical parameters of the epilyers, but is restricted by the influence of the ohmic contact to GaN when testing GaN materials .
     另外,霍尔测试是测量外延材料电学参数的主要手段,但是由于欧姆接触制备困难,用霍尔效应方法测量GaN材料电特性受到限制。
短句来源
     It is shown that Schottky junction characteristics are seriously affected by the carrier concentration of GaN materials.
     分析表明 :Ga N材料的载流子浓度对肖特基结的特性有很大的影响
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  “gan materials”译为未确定词的双语例句
     Preparation and Physical Properties of Low Dimensional GaN Materials
     氮化镓低维材料
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     Synthesis and Characterization of One-dimensional ZnO and GaN Materials
     一维ZnO、GaN纳米材料的制备和表征
短句来源
     Hexagonal wurtzite GaN materials with nano-structure have been fabricated on Si (111) substrates via ammoniating ZnO/Ga2O3 films at different temperatures.
     通过在不同温度下氨化ZnO/Ga2O3膜,在Si衬底上成功制备了GaN纳米结构材料。
短句来源
     New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials.
     用化学气相沉积法,在经过特殊处理的* 单晶基片上成功地合成出一种新形态的GaN低维纳米材料—一GN纳米镊子。
短句来源
     MOCVD, MBE and HVPE have become dominating techniques to grow GaN materials. Among these methods, MOCVD is the most important and widely used by researchers.
     目前,金属有机气相沉积(MOCVD)、分子束外延(MBE)和氢化物气相外延(HVPE)等方法已经成为制备GaN的主流工艺,其中MOCVD使用的最为广泛。
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  相似匹配句对
     Preparation of GaN Nano-materials
     氮化镓(GaN)纳米材料的制备
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     GaN Based Luminescent Materials
     GaN基发光材料
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     Materials:l.
     材料:
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     Materials
     材料
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  gan materials
The use of a two-step growth process in the GaN growth leads to a controlled morphology and improved material properties for GaN materials when grown with a ZnO buffer layer.
      
New features are found in Raman scatterings for these low-dimensional GaN materials, which are different from the previous observations of GaN materials.
      
Low-dimensional GaN materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using Ag particles as a catalyst on the substrate of MgO single crystals.
      
Within Poland there are 14 research efforts developing GaN materials and devices.
      
The goal is to introduce the reader with this technique at the level which is needed for understanding the results in GaN materials.
      
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The single crystal GaN films were prepared by APMOCVD on sappier(0001)and Si(111)substrates.They exhibited n type intrinsic conduction,their concentration,Hall mobility and FWHM of double crystal diffraction were 10 17 ~10 18 cm 3,200~350cm 2/V·s and 7′.respectively.The RT PL spectra result of pure GaN showed that there was a band edge peak at 370nm,It is the first time that we have observed the p type conduct of Zn doped GaN material.

用常压MOCVD方法我们在蓝宝石(0001)、Si(111)衬底上,成功地制备出GaN单晶薄膜材料,取得了GaN材料的初步测试结果。纯度GaN为n型,载流子浓度为1017~1018cm-3,迁移率为200~350cm2/V·s,双晶衍射半峰宽为7′,室温PL光谱本征发光波长为370nm,并首次观察到掺ZnGaN呈p型电导。

The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray rocking curve line...

The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray rocking curve line width of 5' and bright surface is obtained.

报道了原子力显微镜对MOVPE生长GaN材料过渡层表面结构的观察,重点分析了氯化、退火前后过渡层结构变化的原因及其对外延生长晶体质量的影响,探讨了不同条件下GaN成核模式的变化,对GaN材料的生长初期成核机理有了进一步的了解,通过优化生长条件,最终获得了X射线双晶衍射半峰宽为5arcmin,表面明亮的高质量GaN外延层。

The wideband gap semiconductor GaN materials

简要介绍宽禁带半导体氮化镓材料的生长、微波电子器件的物理特性、制造工艺和微波性能。

 
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