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reaction tubes
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  反应管
     Assay B utilized AMV reverse transcriptase and Tfl DNA polymerase and were accomplished with in the same reaction,and don't open the reaction tubes after reverse transcription step.
     ○B逆转录与 PCR在同一缓冲液中进行 ,AMV逆转录酶和 Tfl DNA聚合酶同时加入 ,逆转录后不再开反应管添加试剂。
短句来源
     As the temperature of the by-product 40 kg/cm~2 steam between tubes approaches the temperature of the catalyst bed,the difference of the temperatures within and outside the reaction tubes is very small, hence the temperature differcnce in the radial direction within the tubes is also very small.
     由于管间副产40kg/cm~2的蒸汽,其温度与管内催化床的温度接近,反应管内外的温度差小,反应管内径向温度差小。
短句来源
     The tests of 377 times have been done using 18 kinds of bacteria for 18 kinds of microspic peaction tubes, 82% of them develop the results within 8 hours and 95% within 10 hours, ing according with the results of routine reaction tubes.
     用18种细菌对18种微量反应管进行377管次试验,8小时内出现结果者占22%,10小时内出现结果者占95%,与常规反应管出现的结果完全符合。
短句来源
     Basing upon the characteristics of large scope of fatigue damage of the reaction tubes under alternating inner pressure, taking strain amplitude as damage variable and applying the principle of virtual work, the crack initiation life expression which may reflect the material and structural properties, load and boundary conditions is obtained.
     将反应管在疲劳载荷作用下的损伤归结为大范围损伤下的疲劳问题 ,以应变幅为损伤变量 ,应用虚功原理 ,得到了反映材料结构特性、载荷和边界条件的疲劳寿命理论算式。
短句来源
     In assay B AMV reverse transcriptase and Tfl DNA polymerase were utilized and the reactions were completed in the same buffer. After reverse transcription step the reaction tubes was not opened.
     方法B :AMV逆转录酶和TflDNA聚合酶同时加入 ,逆转录与PCR在同一缓冲体系中进行 ,逆转录后不打开反应管
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  “reaction tubes”译为未确定词的双语例句
     CH7 samples were loaded into the silicate reaction tubes based on two kinds of ratios, 1 and 0.7. The results showed that samples with ratio of 0.7 are enriched (-95.6‰), whereas the results (-100.2‰) of samples with ratio of 1 are nearly equals to the given value (-100.3‰) by the IAEA.
     实验中根据1和0.7两种水/锌的比例对CH7样品装样,发现后面那一组得出的实验值(-95.6‰)比给定值(-100.3±2‰)大,而前面那一组的实验值(-100.‰)跟IAEA的给定值一致。
短句来源
     THE PREPARATION AND NATURE TEST OF BACTERIUM MICROSPIC REACTION TUBES
     细菌微量反应管的制备及性能检测
短句来源
     Tow-dimensional mathematical model of hydrogen production by methanol decomposition and steam-reforming reactor was established, taking CO and CO_2 as the key components. The concentration and temperature profiles in axial and radial direction inside the reaction tubes were obtained by two-(dimensional) orthogonal collocation method.
     以甲醇裂解和甲醇水蒸气重整制氢作为平行的独立反应,CO、CO2为关键组分,建立了甲醇催化重整制氢反应器的二维数学模型,用正交配置法计算了催化床内各组分浓度及床层温度随径向和轴向的分布。
短句来源
  相似匹配句对
     THE PREPARATION AND NATURE TEST OF BACTERIUM MICROSPIC REACTION TUBES
     细菌微量反应管的制备及性能检测
短句来源
     Revolution and Reaction
     法国大革命与反应
短句来源
     On the Extent of Reaction
     化学反应进度
短句来源
     The microscopic reaction tubes of bacterium were prepared by using pure and hard glass tubes.
     应用洁净硬质玻璃管制成细菌微量反应管。
短句来源
     The reliability of G-M counter tubes
     G-M计数管的可靠性
短句来源
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  reaction tubes
Effect of operation and heat treatment on the structure and properties of reaction tubes
      
This technique permits a simple change-over from C, H, N analysis to O, H, N analysis by replacement of the packings of the reaction tubes.
      
The assays were carried out simultaneously in the same reaction tubes for ribosomal 18S RNA to correct for different amounts of input RNA.
      
Disposable Eppendorf reaction tubes containing samples of dried ammonium sulphate after vapour distillation are connected directly to the capillary system of a vacuum device with attached gas ionization tubes.
      
Optimum dimensions of reaction tubes and coils are determined.
      
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An epitaxial growth of ZnSe single crystalline layer on a GaAs substrate has been performed in a hydrogen flow system using ZnSe powder as source material.Before deposition, machemically polished (100) GaAs substrate is first cleaned in trichroethylene, then in aceton and finally in methanol followed by a rinse in deionized water.The substrate is then etched in a mixture of H2SO4:H2O2:H2O = 3:1:1 for about 1 min. In order to remove surface damage resulting from cutting and polishing of the wafer.The source material...

An epitaxial growth of ZnSe single crystalline layer on a GaAs substrate has been performed in a hydrogen flow system using ZnSe powder as source material.Before deposition, machemically polished (100) GaAs substrate is first cleaned in trichroethylene, then in aceton and finally in methanol followed by a rinse in deionized water.The substrate is then etched in a mixture of H2SO4:H2O2:H2O = 3:1:1 for about 1 min. In order to remove surface damage resulting from cutting and polishing of the wafer.The source material and freshly etched substrate are inserted into the respective zones of the reaction tube. The flow rate of the carrier gas H2 is set to 10-40 ml/min, which is controlled by a mass flow controller (M.F.). The source temperature is about 820-850℃.The single-crystalline ZnSe layer is obtained successfully at the substrate temperature range of 550-750℃.The X-ray diffraction analysis, X-ray Laue pattern and reflective electron diffraction analysis of the as-grown layer demonstrat that the layers are single crystalline and have cubic structure. The as-grown surface microphoto-graph and cleavage edge view are presented.The growth rate is found to be proportional to exp(-EA/kT) in the temperature range of 550-700℃, where k is Boltzmann constant, Ea the activation energy and T the growth temperature.The activation energy is 10.5 kcal/mol, which suggests the growth kinetics should be between the mass transfer control case and surface reaction control case.The photoluminescence of epitaxial film is excited by a nitrogen laser (A = 3371 A) with the peak pulsed power of 900kW and measured at 77K and at the room temperature. The PL spectrum at 77K consists of a narrow near- band-edge emission at about 4460 A and a broad emission at longer wavelengths which is attributed to Cu-G emission. The presence of this intrinsic near-band-gap emission line in the PL spectrum even at room temperature sbows the bigh quality of the epitaxial layer.The measurement cf the resistivity and Hall effect are made for epilayers of ZnSe frown on a se-mi-insulating GaAs substrate at room temperature. Ohmic contacts to the ZnSe layers are made by In followed by an annealing step in N2 atmosphere at 350℃ for 3 mins. The resistivity of the as-grown ZnSe is typically 1.1Ωcm. This is attributed to autodoping of Ga impurity from GaAs substrate. The mobility is 114 cm2V-1s-1, and the electron concentration n = 5×1016cm-3. It is shown that ZnSe epilayer grown on (100) GaAs by VPE can be a suitable material for blue-emitting electroluminescent devices.

采用改进的气相外延法在(100)GaAs衬底上外延生长了ZnSe单晶膜。最大生长速率为每小时10μm左右。淀积过程的激活能为10kcal/mol。在77K的温度下测量了外延膜的光致发光,4460A附近可以观察到很强的蓝色发射。外延膜的电阻率~1.1Ω·cm。

In this paper, the two-dimensional model of Lurgi tube-shell type methanol synthesis catalyst beds has been established.The numerical solutions of concentration and temperature profiles in the radial and axial direction of the reaction tubes have been obtained. As the temperature of the by-product 40 kg/cm~2 steam between tubes approaches the temperature of the catalyst bed,the difference of the temperatures within and outside the reaction tubes is very small, hence the temperature differcnce...

In this paper, the two-dimensional model of Lurgi tube-shell type methanol synthesis catalyst beds has been established.The numerical solutions of concentration and temperature profiles in the radial and axial direction of the reaction tubes have been obtained. As the temperature of the by-product 40 kg/cm~2 steam between tubes approaches the temperature of the catalyst bed,the difference of the temperatures within and outside the reaction tubes is very small, hence the temperature differcnce in the radial direction within the tubes is also very small. The result of modeling calculation shows that under the above condition one dimensional model may be used in the calculation of commercial device.

本文建立了鲁奇副产蒸汽管壳型甲醇合成塔催化床的双速率二维模型,求得反应管内轴向及径向的浓度及温度分布的数值解。由于管间副产40kg/cm~2的蒸汽,其温度与管内催化床的温度接近,反应管内外的温度差小,反应管内径向温度差小。模拟计算结果表明,由于径向温度分布均匀,工业装置的计算可采用一维模型。

A decomposition apparatus was established consisting of a reaction tube and a long air-cooling condenser for the separation of antimony and bismuth through volatilization. It is demonstrated that the reaction Sb203+6NH4I=2SbI3+6NH3+3H20 starts at 300℃ and completes at 380℃ in 8 min. In comparison, the reaction Bi203+6NH4It=2Bil3+ 6NH8+3H2O will mot take place below 450℃ and Will complete at 550℃. The differen-ces in boiling point and volatilizing temperature between antimony and bismuth iodide...

A decomposition apparatus was established consisting of a reaction tube and a long air-cooling condenser for the separation of antimony and bismuth through volatilization. It is demonstrated that the reaction Sb203+6NH4I=2SbI3+6NH3+3H20 starts at 300℃ and completes at 380℃ in 8 min. In comparison, the reaction Bi203+6NH4It=2Bil3+ 6NH8+3H2O will mot take place below 450℃ and Will complete at 550℃. The differen-ces in boiling point and volatilizing temperature between antimony and bismuth iodide are large enough to make them separated at different temperatures. Experimental data show that antimony iodide was sublimated at 380℃ without any loss of bismuth, and upon the completion of SibI8 volatilization the long condenser tube can be substituted for by a clean one to collect volatilizing bismuth iodide at the temperature of 550℃ Resu-lts are in gciod agreement with those obtained from thermodifferential-thermogravimetric analyses.Determination of antimony was done using extraction spectrophotometric method with the reagent 5-Br-PADAP, and that of bismuth using spectrophotometric method with Xylenol Orange. The method is simple, rapid, accurate 'and suitable for rock and other geological samples containing antimony and bismuth in the range of X-X 102 ppm.

本文介绍一种新的用于锑、铋分析的碘化铵分解装置。作者研究了锑、铋及其化合物与碘化铵一起加热时的挥发性质,给出一系列实验数据,确定了挥发分离微量锑、铋的必要条件,拟定了岩石中微量锑、铋分离与分光光度测定的流程。本方法标准误差为S_(sb)=0.38;S_(Bi)=0.23,适用于锑、铋含量在X—X·10~(?)ppm范围的岩石样品分析。

 
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