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x interface
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  x接口
     Then, the difficulties and necessary of realizing the Parlay X interface in IMS are covered, and so are the security issues about it.
     本文研究了在IMS网络中的Parlay X接口,以及IMS中Parlay X网关的设计与实现,本文具体内容可归纳如下:
短句来源
     The thesis presented here sums up at first the function of V5 x interface and structure of V5 x protocol, and then describes in detail these test principles and methods regarding how to operate V 5TS on PC,and finally, describes the transfer process of protocol message through a test example
     首先概述了 V5 .x接口的功能及 V5 .x协议的结构 ,在此基础上 ,详细阐述了在 PC机上实现 V5 TS (V5 .x协议测试系统 )的测试原理及方法。 最后 ,通过一个测试举例 ,描述协议消息的传输过程。
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     Most objectoriented languages,for example,C++,PB and VFP,provide polymorphism via inheritance,and Visual Basic uses the multiple Active X interface to achieve polymorphism,In the paper,how to achieve the multiple Active X interface with the concrete and abstract class and accordingly to achieve the polymorphism are discussed.
     Visual Basic不用继承来提供多态 ,而是通过多重 Active X接口来提供多态。 着重分析了通过抽象类和具体类来实现多重 Active X接口、从而实现类的多态的有关技术。
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  “x interface”译为未确定词的双语例句
     The Study of a-Si:H/a-SiN_x Interface of TFT
     薄膜晶体管a-Si:H/a-SiN_x界面研究
短句来源
     This paper also makes a research into the characteristic modeling of PbSeSchottky barrier junction with PbCl_x interface and the methods of abstractingmodel parameters,such as R_o,n,R_(SH),and,φ_B.The measurements haveshown that the Pb/PbSe Schottky barrier junction with interface layers hasgood electronic characteristics.
     本文还研究了具有PbCl_x 界面的PbSe 肖特基势垒结的特性模型化,同时给出了R_0,n,R_(SH),和Φ_B 等模型参数的提取方法. 测量表明具有界面层的Pb/PbSe势垒结显示了良好的电学性能.
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     Inter -TMN Security Management over X interface
     TMNX接口安全管理的研究
短句来源
     Second, TMN-compliant X interface, the so-called Xcoop interface is described in this model, which is used to exchange management information in different domains.
     其次定义了该模型在不同域之间交换信息的接口,即所谓的Xcoop。
短句来源
     Comparing the results of both the Fourier transform infrared spectra and the optical absorption spectra of the samples deposited under different conditions,it is shown that the microstructure of the thin film depended on the gas flow ratio and annealing process. The sample with lower excess silicon shows a lower density of defect state at the silicon nanocrystal/SiN_x interface due to a higher binding hydrogen content.
     红外吸收和可见光吸收特性比较结果显示,薄膜样品的微观结构依赖于化学计量比以及退火过程,硅含量较低样品因高的键合氢含量而表现出低的纳米硅表面缺陷态密度;
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  相似匹配句对
     Conrersational Interface
     会话式界面 王勇
短句来源
     Microsensors and Its Interface
     微传感器及其接口
短句来源
     3)mixed interface.
     3)混合型的界面。
短句来源
     THE INTERFACE OF FOXPRO TO WORD
     Foxpro与Word的接口研究
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  x interface
Failure of the studied films initiated the penetration of Cu into the Si/TaxNi1-x interface and triggered the partial dissociation of the TaxNi1-x barrier layer, forming Cu3Si precipitates, Ni-silicide and Ta-silicide.
      
As the exposure time of the As4 flux on the growth front of InAsxP1-x increased during growth interruptions, the 2DEG mobility, in particular the 77K mobility, was considerably degraded due to increased roughness at the InAlAs/InAsxP1-x interface.
      
X-ray photoelectron spectroscopy was used to measure the valence band discontinuity at the ZnSe/ZnSxSe1-x interface as a function of alloy composition.
      
The ion range is such that the Si/GexSi1-x interface is not significantly damaged.
      
Both examples have been chosen to demonstrate that the migration to integrated management systems will require the use of standardized and comprehensive interfaces, such as the TMN X interface.
      
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This paper describes the study of the processes of forming Ⅳ-ⅥPbSe metal-semiconductor Schottky barrier junction and the mechanism bywhich the chlorine,as an interface of Pb/PbSe,acts to increase the R_oAvalue.This paper also makes a research into the characteristic modeling of PbSeSchottky barrier junction with PbCl_x interface and the methods of abstractingmodel parameters,such as R_o,n,R_(SH),and,φ_B.The measurements haveshown that the Pb/PbSe Schottky barrier junction with interface layers hasgood...

This paper describes the study of the processes of forming Ⅳ-ⅥPbSe metal-semiconductor Schottky barrier junction and the mechanism bywhich the chlorine,as an interface of Pb/PbSe,acts to increase the R_oAvalue.This paper also makes a research into the characteristic modeling of PbSeSchottky barrier junction with PbCl_x interface and the methods of abstractingmodel parameters,such as R_o,n,R_(SH),and,φ_B.The measurements haveshown that the Pb/PbSe Schottky barrier junction with interface layers hasgood electronic characteristics.

本文对形成Ⅳ-Ⅵ族PbSe 金属-半导体肖特基势垒结之工艺和为了提高该器件的R_0A 值,将氯化物作为Pb/PbSe 界面的机理作了研究.本文还研究了具有PbCl_x 界面的PbSe 肖特基势垒结的特性模型化,同时给出了R_0,n,R_(SH),和Φ_B 等模型参数的提取方法.测量表明具有界面层的Pb/PbSe势垒结显示了良好的电学性能.

The functions,architecture and protocol procedures of V_(5X) interface are analysed from the application point of view.A dis- cussion is followed on its imple- mentation techniques.Finally,a brief introduction is given to the latest V_(B5) interface.

本文从应用的角度剖析了V_(5.X)接口的功能、结构和协议过程,讨论其实现技术,并简要介绍最新的 V_(B5)接口。

The nanometer SiC powders of 8~10nm were synthesized by CVD at 1100℃. A blue luminescence peaked at 2 61eV (~475nm) were observed from the SiC powders at room temperature. The powders were annealed at 600~1000℃ in dry N 2 atmosphere by the rapid thermal annealing (RTA). The peak intensity of blue luminescent increases as RTA temperature and decreases when the annealing temperature is higher than 900℃. With XRD, IR, TEM, XPS analysis, we concluded that the blue PL emission is caused by oxygen deficiency defects...

The nanometer SiC powders of 8~10nm were synthesized by CVD at 1100℃. A blue luminescence peaked at 2 61eV (~475nm) were observed from the SiC powders at room temperature. The powders were annealed at 600~1000℃ in dry N 2 atmosphere by the rapid thermal annealing (RTA). The peak intensity of blue luminescent increases as RTA temperature and decreases when the annealing temperature is higher than 900℃. With XRD, IR, TEM, XPS analysis, we concluded that the blue PL emission is caused by oxygen deficiency defects in the SiC/SiO x interface.

在4.68eV的激光激发下,室温CVD合成的纳米SiC粉体,可发射475nm的蓝光,经600~1100℃在N2气氛下进行快速退火(RTA)处理,其荧光强度随退火温度升高而增强,当T≥900℃时,荧光强度下降,但发光峰位与退火温度无关.通过XRD、IR、TEM、XPS等研究,认为纳米SiC中与氧有关的缺陷可能是引起475nm蓝光发射的主要原因

 
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