助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   gradient refraction index 在 物理学 分类中 的翻译结果: 查询用时:0.104秒
图标索引 在分类学科中查询
所有学科
物理学
无线电电子学
自动化技术
更多类别查询

图标索引 历史查询
 

gradient refraction index
相关语句
  梯度折射率
    GaAlAs/GaAs materials with gradient refraction index separate confinement single quantum well structure has been grown by MBE.
    利用MBE生长出GaAlAs/GaAs 梯度折射率分别限制单量子阱激光器(GRIN- SCH- SQW) 材料。
短句来源
    The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
    利用分子束外延生长装置生长出了GaAlAs/GaAs梯度折射率分别限制(GRIN-SCH)单量子阱结构材料。
短句来源
    GaAlAs/GaAs material having gradient refraction index, and a separate confinement single quantum well structure has been grown by MBE.
    利用V8 0型MBE生长GaAlAs/GaAs梯度折射率分别限制单量子阱 (GRIN SCH SQW )结构。
短句来源
    The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
    利用分子束外延生长法生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。
短句来源
    In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The samlpe were characterized by high resolution photoluminescence measurements. For 8nm single quantum well, the photo luminescence spectra at 10K were measured which have a linewidth(FWHM) of 6 2nm and large intensity, indicating an abrupt GaAlAs/GaAs interface.
    阐述了用MOCVD 生长的GaAlAs/GaAs 梯度折射率分别限制量子阱结构及其光学性质. 样品经高分辨率光致发光(PL)测试显示, 在10K 下对于8nm 的单量子阱, 通过激发产生的荧光光谱半峰宽(FWHM)为6.2nm , 同时具有较高的强度. 表明量子阱结构具有陡峭的界面;
短句来源
更多       
  梯度折射率
    GaAlAs/GaAs materials with gradient refraction index separate confinement single quantum well structure has been grown by MBE.
    利用MBE生长出GaAlAs/GaAs 梯度折射率分别限制单量子阱激光器(GRIN- SCH- SQW) 材料。
短句来源
    The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
    利用分子束外延生长装置生长出了GaAlAs/GaAs梯度折射率分别限制(GRIN-SCH)单量子阱结构材料。
短句来源
    GaAlAs/GaAs material having gradient refraction index, and a separate confinement single quantum well structure has been grown by MBE.
    利用V8 0型MBE生长GaAlAs/GaAs梯度折射率分别限制单量子阱 (GRIN SCH SQW )结构。
短句来源
    The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
    利用分子束外延生长法生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。
短句来源
    In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The samlpe were characterized by high resolution photoluminescence measurements. For 8nm single quantum well, the photo luminescence spectra at 10K were measured which have a linewidth(FWHM) of 6 2nm and large intensity, indicating an abrupt GaAlAs/GaAs interface.
    阐述了用MOCVD 生长的GaAlAs/GaAs 梯度折射率分别限制量子阱结构及其光学性质. 样品经高分辨率光致发光(PL)测试显示, 在10K 下对于8nm 的单量子阱, 通过激发产生的荧光光谱半峰宽(FWHM)为6.2nm , 同时具有较高的强度. 表明量子阱结构具有陡峭的界面;
短句来源
更多       
  “gradient refraction index”译为未确定词的双语例句
    The analysis provides some help for understanding light phenomena in gradient refraction index medium.
    这些分析展示了渐变折射率介质中光线与均匀介质中光线的差异,对理解和解释变折射率介质中的光学现象有一定帮助.
短句来源
    The path of light in materials with gradient refraction index
    渐变折射率介质中光线路径的数值计算
短句来源
    Curvature of Light Path in Gradient Refraction Index Medium
    变折射率介质中光线的弯曲
短句来源
    GaAlAs/GaAs material with gradient refraction index separate confinement (GRIN-SCH) single quantum well structure has been grown by MBE.
    利用分子束外延技术生长出了GaAlAs/GaAs折射率渐变分别限制单量子阱结构材料。
短句来源
    Based on Fermat's principle,the equation satisfied by light path in gradient refraction index medium is derived.
    文章以费马原理为基础,推导了一维渐变折射率介质中光线方程满足的微分方程;
短句来源
查询“gradient refraction index”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method. PL spectrum, double crystal X ray diffraction and electrochemical CV profile in the sampls have been measured. The experimental results show that sample′s quality has reached requirement of design. Manufacture of laser diodes with the material has obtained preliminary result.

利用分子束外延生长法生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。对样品进行了光荧光谱、双晶X射线衍射和电化学电容-电压分布测量。实验结果表明,样品质量达到了设计要求。利用该材料制作的激光二极管获得了初步结果

GaAlAs/GaAs material with gradient refraction index separate confinement (GRIN-SCH) single quantum well structure has been grown by MBE.A laser diode(LD) made from this material is used as the pumping source of Nd:YAG laser to carry out end pumping experiment.Output power of Nd:YAG laser up to 700 mW and optical-to-optical transform efficiency of 26% are obtained at LD current of 3.3 A with the output power of 2.7 W.

利用分子束外延技术生长出了GaAlAs/GaAs折射率渐变分别限制单量子阱结构材料。用该材料作出的激光二极管作泵浦源对Nd:YAG激光器进行端面泵浦实验,在工作电流为3.3A时,LD输出功率为2.7W,得到Nd:YAG激光器的输出功率达700mW,光-光转换效率达26%。

Analysis is made on various factors that influence the quality of GaAs and AlGaAs grown by MBE.GaAlAs/GaAs materials with gradient refraction index separate confinement single quantum well structure has been grown by MBE.The experimental results show that sample's quality has reached design requirement.QCW output power of array laser diodes is up to 60 W with the peak wavelength of 808.4 nm.

对影响分子束外延( MBE) 材料生长的一些主要因素进行了细致的分析。利用MBE生长出GaAlAs/GaAs 梯度折射率分别限制单量子阱激光器(GRIN- SCH- SQW) 材料。利用该材料制作出的列阵半导体激光器的准连续输出功率达到了60 W(t= 200 μs,f= 50 Hz) ,峰值波长为808 .4 nm 。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关gradient refraction index的内容
在知识搜索中查有关gradient refraction index的内容
在数字搜索中查有关gradient refraction index的内容
在概念知识元中查有关gradient refraction index的内容
在学术趋势中查有关gradient refraction index的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社