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solid band
相关语句
  固体能带
     SOLID BAND TEACHING ASSISTED BY COMPUTER
     固体能带的计算机教学方法
短句来源
     The Methods of Solid Band Structure Calculation
     固体能带计算方法
短句来源
     The calculation methods of the solid band structure are reviewed,the band structure of Si and Ge are calculated by the first principle methods based on planewave pseudopotential theory,and the calculation results are analyzed.
     作者综述了固体能带常用的计算方法,并采用第一性原理赝势平面波方法计算了Si和Ge的电子能带,对计算结果进行了分析。
短句来源
  “solid band”译为未确定词的双语例句
     This relation is calculated for ZnO thin films of various thickness with solid band model.
     本文采用刚性能带模型,计算了不同厚度的ZnO薄膜内载流子浓度与表面吸附氧密度的关系,并对结果进行了讨论。
短句来源
  相似匹配句对
     The Calculus of Solid energy Band
     固体能带的计算方法
短句来源
     The Methods of Solid Band Structure Calculation
     固体能带计算方法
短句来源
     Solid Camera
     固体摄象机
短句来源
     Band of Brothers
     兄弟连
短句来源
     Solid Lasers
     固体激光器
短句来源
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  solid band
In all cases where the ecs locus was inactivated, a dense block of chromatin reminiscent of a solid band was found in the 2B region instead of the four bands 2B1-2, 3-4, 5 and 6.
      
The minimum width of a solid band of material divided by the centre-to-centre distance between two or a series of adjacent holes.
      
Should this be the case, the solid-band option then would be emphasized.
      
In these cases, a solid band can be demonstrated by diluting the serum 2to 10-fold and repeating the assay.
      
Figure 3 shows a solid band around 16.5 kb, where the protein should be, and almost no other protein.
      


The sensitivity of a gas sensing semiconductor thin film may be expressed by the relation between the density of charge carrier in the film and the density of oxygen adsorbed on the film surface. This relation is calculated for ZnO thin films of various thickness with solid band model. Results are concluded that high sensitivity might be obtained should the film thickness and other parameters be properly chosen.

气敏半导体薄膜内的载流子浓度与薄膜表面吸附氧密度的关系,可以反映气敏薄膜的敏感性。本文采用刚性能带模型,计算了不同厚度的ZnO薄膜内载流子浓度与表面吸附氧密度的关系,并对结果进行了讨论。计算结果表明,适当选取薄膜的厚度等参数,可以得到高的气敏性。

High vacuum evaporation condensation method was utilized to generate nanocrystalline Pd with a crystal size ranging from 6.6 nm to 23 nm.The nano-sized Pd was pressed into disk-like pellets and the thermoelectric power (TEP) was measured by the differential method.The behavior of TEP between 77 K and 273 K has been determined.The result shows that the TEP of nanocrystalline Pd depends on the grain size strongly.The temperature dependence ofthe TEP is diferent from that of conventional polycrystalline Pd----the...

High vacuum evaporation condensation method was utilized to generate nanocrystalline Pd with a crystal size ranging from 6.6 nm to 23 nm.The nano-sized Pd was pressed into disk-like pellets and the thermoelectric power (TEP) was measured by the differential method.The behavior of TEP between 77 K and 273 K has been determined.The result shows that the TEP of nanocrystalline Pd depends on the grain size strongly.The temperature dependence ofthe TEP is diferent from that of conventional polycrystalline Pd----the TEP keeps positivebetween 77 K and 273 K when the grain size is smaller than 10 nm.A qualitative interpretation for these new phenomena is prpoposed.Due to the large number (~1019cm-3) of interfaces of different atomic structures in this kind of new material the interfacial component exhibits a little short-range order and,thus,differs from the two known solid band structure and/or Fermi energy of nanocrystals may be associated with their grain size As a consequence,the TEP of nanocrystalline Pd may be controlled by their microstructural parameter such as grain size,according to the Mott model.

测量了晶粒尺寸为6.6~23nm 的亳微晶 Pd 从77K 到273K 的热电势率.结果表明,毫微晶 Pd 的热电势率强烈地依赖于晶粒尺寸.我们认为这可能是由于过渡金属 Pd 的电子能带结构或费米能随晶粒尺寸变化所致.

The calculation methods of the solid band structure are reviewed,the band structure of Si and Ge are calculated by the first principle methods based on planewave pseudopotential theory,and the calculation results are analyzed.

作者综述了固体能带常用的计算方法,并采用第一性原理赝势平面波方法计算了Si和Ge的电子能带,对计算结果进行了分析。

 
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