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threshold-energy
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     High-threshold-energy activation reaction rates were measured in cylindric combined materials bombarded by D-T neutrons with 6 threshold-energy detectors Fe, Al, Nb, F, Zr and Cu. The experimental results are discussed.
     用六种阈能探测器Fe、Al、C2F4、Nb、Zr和Cu测量了D-T聚变中子在柱状组合材料上的高阈能活化反应率,讨论了实验结果。
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  相似匹配句对
     Threshold segmentation of the fat;
     阈值分割脂肪;
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     Derivative Function at the Threshold
     函数在特殊点的导数
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     The threshold temperature is -2℃.
     阈温为-2℃。
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     Energy Recovery Threshold Logic
     能量回收阈值逻辑电路
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     Threshold Fail-Stop Signature
     门限失败—停止签名
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  threshold-energy
We employ a Birman-Schwinger type analysis to derive estimates on the number of bound-states of certainN-body systems with threshold-energy ∑=inf δess(H) supposed to be zero.
      
By applying laser-ablation experimental techniques, the absorption coefficient and the threshold-energy fluence of the paper manuscript were determined .
      


Starting from π-N scattering amplitude and basing on the Mandelstam's representation and unitary condition, analyticity and threshold properties of fermion Regge trajectories of baryon quantum number 1 and strangeness 0 are investigated. The following preliminary results are obtained: (1) The position parameter of the Regge trajectories a(s) has a right-hand physical cut and no left-hand dynamical cut, but has a kinematical left-hand cut at s=0; (2) a(s) in the region s<0 are complex; α+(s) and α-(s), being...

Starting from π-N scattering amplitude and basing on the Mandelstam's representation and unitary condition, analyticity and threshold properties of fermion Regge trajectories of baryon quantum number 1 and strangeness 0 are investigated. The following preliminary results are obtained: (1) The position parameter of the Regge trajectories a(s) has a right-hand physical cut and no left-hand dynamical cut, but has a kinematical left-hand cut at s=0; (2) a(s) in the region s<0 are complex; α+(s) and α-(s), being of opposite space parity, are complex conjugate to each other. In the region 0

从π介子核子散射振幅出发,根据Mandelstam表示和么正条件,对于奇异量子数为零、重子数为1的费米子Regge轨迹,求得了下列结果:(1)位置参数α(s)的解析性,只有右方物理割而无左方动力割,但是左方有从s=0到-∞的运动学割。(2)当s<0时α(s)取复数值,并且还有一条同它成复共轭(在s<0范围内)的Regge轨迹。这一对轨迹它们的J-宇称相同,但是空间宇称相反。0

从π介子核子散射振幅出发,根据Mandelstam表示和么正条件,对于奇异量子数为零、重子数为1的费米子Regge轨迹,求得了下列结果:(1)位置参数α(s)的解析性,只有右方物理割而无左方动力割,但是左方有从s=0到-∞的运动学割。(2)当s<0时α(s)取复数值,并且还有一条同它成复共轭(在s<0范围内)的Regge轨迹。这一对轨迹它们的J-宇称相同,但是空间宇称相反。0

The coherence properties of a Q-switched frequency-doubled Nd:YAG laser havebeen investigated by a Michelson interferometer and photography.In this experi-mental study,coherence degree |γ_(τ)| was measured as a function of pathlengthdifference and of ratio of input energy to threshold input energy.The coherencelength measured was 40mm at a ratio of input energy to threshold energy of 3.2.Spatial coherence of beam was deduced from the fringes formed by a Michelson inter-ferometer in which the laser beam interferes...

The coherence properties of a Q-switched frequency-doubled Nd:YAG laser havebeen investigated by a Michelson interferometer and photography.In this experi-mental study,coherence degree |γ_(τ)| was measured as a function of pathlengthdifference and of ratio of input energy to threshold input energy.The coherencelength measured was 40mm at a ratio of input energy to threshold energy of 3.2.Spatial coherence of beam was deduced from the fringes formed by a Michelson inter-ferometer in which the laser beam interferes with itself after being rotated 180°,Theexperimental results were physically interpreted.

用迈克尔逊干涉仪及照相法研究了Q 开关Nd:YAG 倍频激光的相干特性。在该实验研究中,测量了相干度|γ(τ)|与程差及输入能量和输入阈值能量比值的函数关系,在输入能量和阈值输入能量比值为3.2时,测得相干长度是40mm,用一迈克尔逊干涉仪,激光束旋转180°后再与自己干涉,从所成干涉条纹可以推断光束的空间相干性。本文对实验结果作了物理解释。

This paper describes the creative process of defects and its influence on the Semiconductor material parameter-mirority carrier diffusion length and luminescence efficiency in elcetron-irradiated GaP.The charge of minority carrier diffusion length is measured by SPV.The irradated defect are observed by metallurgical microscope,IR micriscope and SEM.We have analyzed productive mechanism of defects in electron-irradiated GaP.The value of atomic displacement threshold energy and electron-irradiatcd threshold energy...

This paper describes the creative process of defects and its influence on the Semiconductor material parameter-mirority carrier diffusion length and luminescence efficiency in elcetron-irradiated GaP.The charge of minority carrier diffusion length is measured by SPV.The irradated defect are observed by metallurgical microscope,IR micriscope and SEM.We have analyzed productive mechanism of defects in electron-irradiated GaP.The value of atomic displacement threshold energy and electron-irradiatcd threshold energy are estimated by irradiated theory.This work proves that the point defects and rnicrodfeds are importance non-radiation recombination centers The minority carrier diffunsion lergth and luminescence efficiency sharply decrease when the high density or point defects and microdefects has formated.These results has some practical senses.

本文描叙电子辐照GaP晶体中缺陷的产生过程及对少子扩散长度和发光的影响。测量了电子辐照前后的少子扩散长度的变化,观察了缺陷密度和形貌,通过阴极射线发光讯号和电子束感生电流讯号的检测,对少子扩散长度和缺陷的变化加以验证。分析了电子辐照GaP晶体中缺陷产生的机制,计算了GaP晶体的原子位移间能和电子辐照阔值能量。本工作证明GaP晶体中点缺陷和微缺陷是重要的无辐射复合中心,高密度微缺陷使材料少子寿命和发光效率显著降低,产生发光猝灭。

 
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