Ag and Sb, Te were chose as p -type and n-type doping agents, two-step solid state reaction was used to synthesis p-type and n-type Mg_2Si_0.8Ge_0.2 powders.
The cutoff frequency at 1926cm -1 of the second-order Raman is not the overtone of the A 1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.
二级喇曼谱的截止频率对于不同掺杂情况的 4 H- Si C具有相同的值 . 它并不等于 n型掺杂 4 H- Si C的 A1 (L O)声子的倍频 ,而是等于未掺杂样品的 A1 (L O)声子的倍频 .
The types of donors,their mechanisms,the substrates used,the methods and the progresses of each donors in n type doping of diamond are reviewed. The studies of each donor properties (group Ⅰ:Li,Na;group Ⅴ:N,P;group Ⅵ:O,S)suggest that doping Sulfur using CVD technique is an optimum way to obtain n type diamond.
The characterization of structure and spectra for modified TiO_2 was made. And a new mechanism of enhanced activity was elucidated. 1. Nanoscale TiO_2 powders doping with V~(5+), Nb~(5+),Ta~(5+), Cr~(6+), Mo~(6+), W~(6+) ions were prepared using TiCl3 as a source matter.
The results show that the inversion efficiency of the solar cell gets to 14.5% and the contact resistance is only about 0.002 Ω by means of phosphoric agent.
Also different pre deposition surface treatments were made and found to be crucial to the performance of Schottky contacts based on Al x Ga 1- x N/GaN heterostructures.
Passivation of GaAs using a (NH4)2Sx solution for 40 min followed by sublimation of the excess sulphur atoms in high vacuum result in an effective dopant for controllable n-type doping.
The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method.
Accumulation layers are separated from highly n-doped contact regions which freely supply electrons to the 2DEGs via 80 nm thick lightly n-doped spacer layers.
Calculation shows that the magnitude of the helicity-dependent photocurrent in n-doped quantum well structures corresponds to recent experimental observations.
Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer.