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能带
energy band
A Research on Current Transportation Theory of Heterojunction Diffusion Model I. A New Way for Establishing Equilibrium Energy Band Diagram of an Abrupt Heterojunction 异质结扩散模型电流传输理论研究——Ⅰ.突变异质结平衡能带图建立的新途径 短句来源 Zone-variational Method and Energy Band calculations 分区变分法和固体能带的计算 短句来源 Energy Band Design for Heterojunction Bipolar Transistors 异质结双极型晶体管的能带设计 短句来源 Energy Band Structures for Compound Semiconductors AlSb, ZnSe and CdTe 化合物半导体AlSb、ZnSe和CdTe的能带结构 短句来源 Theoretical Determination of Energy Band Discontinuity in the Heterojunction 异质结能带不连续性的理论确定 短句来源 更多 band
A Research on Current Transportation Theory of Heterojunction Diffusion Model I. A New Way for Establishing Equilibrium Energy Band Diagram of an Abrupt Heterojunction 异质结扩散模型电流传输理论研究——Ⅰ.突变异质结平衡能带图建立的新途径 短句来源 Zone-variational Method and Energy Band calculations 分区变分法和固体能带的计算 短句来源 Energy Band Design for Heterojunction Bipolar Transistors 异质结双极型晶体管的能带设计 短句来源 Tight Binding Calculations for Band Structures and Other Electronic Properties of GaAs-GaP Superlattices 紧束缚法计算GaAs-GaP超晶格的能带结构及电子的有关性质 短句来源 INTRINSIC CARRIER CONCENTRATION IN Hg_(1-x)Cd_xTe SEMICONDUCTORS WITH NONPARABOLIC BAND 非抛物型能带半导体Hg_(1-x)Cd_xTe的本征载流子浓度 短句来源 更多 energy bands
CALCULATIONS OF THE ENERGY BANDS OF THE QUATER NARY ALLOY In_(1-x)Ga_xAs_yP_(1-y)BY THE PSEUDOPOTENTIAL METHOD 用赝势法计算四元合金In_(1-x)Ga_xAs_yP_(1-y)的能带 短句来源 The Calculation of InGaAs/InP Strained Quantum Well Energy Bands 利用K·P方法计算InGaAs/InP应变量子阱的能带 短句来源 The Calculation of InGaAs/InP Strained Quantum Well Energy Bands InGaAs/InP应变量子阱的能带比较 短句来源 The Preparation and the Calculations of Energy Bands and Electron-Emission for Carbon Nanotubes 碳纳米管的制备、能带和电子发射计算 短句来源 Based on the energy bands of GaP and AlP,the change of energy gaps in AlGaPsolid solution at critical points with x is discussel according to the virtual crystal ap-proximation. 从GaP和AlP的能带出发,对AlGaP固溶体各临界点处的能隙随x的变化按虚晶近似进行了讨论. 短句来源 更多 electronic band
A Calculation of the Electronic Band of InP (110) Surface InP(110)表面电子能带计算 短句来源 Research on Electronic Band Structures of Superlattices(Ge_2)_1/(GaAs)_m(110) with m=1-20 超晶格(Ge_2)_1/(GaAs)_m(110)(m=1-20)的电子能带结构研究 短句来源 The Dependence of the Electronic Band Structures of Superlattices (Al_xGa_(1-x)As)_m/(GaAs)_m(001) on the Alloy Composition x (Al_xGa_(1-x)As)_m/(GaAs)_m(001)超晶格的能带结构与合金组分x间的关系 短句来源 The Electronic Band Structures of (110)-Oriented Superlattices(Al_xGa_(1-x)As)m/(GaAs)_m 超晶格(Al_xGa_(1-x)As)_m/(GaAs)_m(110)的电子能带结构 短句来源 Electronic Band Structures and Electronic Concentration Distributions of Quantum Wells Si/Ge_(0.3)Si_(0.7)With δ-Doping in Barriers 势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构及电子密度分布 短句来源 更多 
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Finite energy band-limited functions are reconstructed iteratively
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We also report the time profiles of the flare of October 29, 2003, in the energy bands corresponding to the continuum in the energy band 0.3-0.6 MeV, the nuclear lines of 56Fe, 24Mg, 20Ne, 28Si, 12C, and 16O, and the 2.2-MeV neutron-capture line.
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We present data on the Spin-X sensitivity achievable during long-term observations of persistent and transient sources and on its sensitivity to X-ray bursts from Galactic sources in the 2-30-keV energy band.
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The SIGMA telescope recorded relatively bright bursts with peak fluxes of 10-6-10-4 erg s-1 cm-2 in the 100-500-keV energy band.
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XMM-Newton yields an upper limit on the SNR luminosity in the 2-10 keV energy band, LX ? 5 × 1034 erg s-1.
例句来源 更多 band
Frequency-Domain Bounds for Nonnegative, Unsharply Band-Limited Functions
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Aliasing error bounds are derived for one- and two-channel sampling series analogous to the Whittaker-Kotel'nikov-Shannon series, and for the multi-band sampling series, and a "derivative" extension of it, due to Dodson, Beaty, et al.
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In this paper we give a further investigation of the method introduced by the author in [1, Frequency-domain bounds for nonnegative unsharply band-limited functions] for proving bounds for functions with nonnegative Fourier transforms.
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Finite energy band-limited functions are reconstructed iteratively
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Unique reconstruction of band-limited signals by a Mallat-Zhong wavelet transform algorithm
例句来源 更多 energy bands
We also report the time profiles of the flare of October 29, 2003, in the energy bands corresponding to the continuum in the energy band 0.3-0.6 MeV, the nuclear lines of 56Fe, 24Mg, 20Ne, 28Si, 12C, and 16O, and the 2.2-MeV neutron-capture line.
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Analysis of the soft X-ray emission in two energy bands detected by the GOES satellites for about 20 powerful solar flares reveals long time intervals during the decay phase when the source temperature decreases, in general, exponentially.
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The paper considers the topological characteristics of dispersion functions ?s(p) in energy bands in single crystals related to classical electron trajectories in uniform magnetic fields.
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The two-orbital Hubbard model is used to obtain formulas for the fermion excitation spectrum in the energy bands hybridized by the Anderson interaction.
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An attempt is made to calculate the energy bands and spectra of the characteristic CKα emission of small-diameter carbon nanotubes.
例句来源 更多 electronic band
Since the discovery of CNTs, people have employed more serious quantum mechanical methods, including the electronic band theory, tight-binding theory, scattering theory and density function theory, to investigate FE of CNTs.
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LMTO calculations of the electronic band structure showed that CaCo2 forms as a result of an s-d electronic transition of Ca and in the ground state it is a ferromagnet with a high magnetic moment per Co atom.
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The electronic band structure of corundum (α-Al2O3) is calculated by the ab initio density functional method and compared with experimental results.
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However, it is less demanding to the quality of experimental data and makes it possible to study situations where only a portion of the electronic band profile is accessible for analysis.
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Specific features of magnetoabsorption resulting from exactly taking into account the electronic band spectrum
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其他
~~ 金属经过冷加工产生了缺陷,或者使晶体的电子结构有所变化,所有这些会影响金属的电阻率,本文在室温进行连续拉伸的过程中测量了铜、铝、铁、锌和镉五种金属的电阻率,并且观察拉伸速度对电阻率的影响。此外,还测量了在有应力与没有应力的情况下,电阻率的回复,发现锌的电阻率随延伸率的改变是先减少后增大,慢速拉伸铜时电阻率也是有变小的反常变化。最后,对这些反常电阻率的变化用能带概念作了初步的解释。 文摘来源 In spite of the fact that many technical properties of recently developed humidity-sensitive semiconducting ceramics have considerably been improved, theoretical studies are rather inadequate, impeding further progress to be made in the idealization of the humidity-sensitive materials and devices.This paper analyzes theoretically the electronic process within the semiconducting ceramics under the influence of humidity according to the band structure, surface state and boundary state of the oxide semiconduct... 近几年发展起来的湿敏半导瓷,虽然在各种技术性能方面都有了较大的改进,但是在我国这方面的理论研究工作却仍做得很少,因而使湿敏材料及其器件的进一步发展受到了阻碍.本文从氧化物半导瓷的能带结构、表面态与界面态理论出发,分析了水份作用下在半导瓷中的电子过程,及电阻率温度系数的调整途径等问题.文中还着重对有关作用机理作了探讨. 文摘来源 It is shown in our experiments that the threshold current of the lasers decreases with the lowering of temperature, and finally enters saturation region. This is essentially consistent with Hwang's result in the range of 300-10 K. But further lowering in temperature will increase the threshold current of the lasers. We suppose that this iucreasement is caused by the leakage of carriers. When the temperature is in the range of 2.8-6 K, the threshold current, the voltage at the junction and the dynamic electr... 实验证明,温度下降,受激发射阈值电流下降,进入一个饱和区。这与Hwang在300—10K间的观察结果一致。但尔后又继续上升。我们认为这起因于载流子的泄漏。当温度在6—2.8K间阈值电流、结电压、动态电阻呈现规律性的结构。如果假设发生了电子-空穴凝聚,可用朗道相图作定性说明,但也可能起因于杂质能带。 文摘来源 << 更多相关文摘 
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