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      plasma rf
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  等离子体射频
     The effects of various technique parameters, such as dilute ratio of SiH4 gas, equilibrium pressure of reaction gas, substrate temperature, plasma RF power and DC negtive bias voltage, on the quality of ncSi∶H films grown by PECVD were discussed. The new approach used to improve the quality of the thin films was discussed. 
     研究了PECVD生长ncSi∶H膜过程中SiH4气体稀释比、平衡反应气压、衬底温度、等离子体射频功率和直流负偏压等各种工艺参数对生成膜层质量的影响,探讨了提高膜层质量的新途径
短句来源
     The many strengths of the shield include considerable reduction of plasma rf potential,which strongly interferes plasma evaluation,decrease of discharge current of the coil,damping of the differential magnetic field signal,and negligible influence on the plasma power absorption as proved by argon optical spectroscopy.
     本文中,在平板型ICP源的感应线圈和介质窗口之间,使用了对称、均匀、呈辐射状的法拉第屏蔽板。 结果表明,屏蔽板的使用不仅极大地降低了干扰等离子体参量测量的等离子体射频电位,而且也降低了线圈中的放电电流和等离子体中的轴向微分磁场信号强度,但Ar等离子体的发射光谱表明,法拉第屏蔽的采用对等离子体功率吸收的影响不大。
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  “plasma rf”译为未确定词的双语例句
     Conclusion Radiofrequency in adrenal gland can alleviate the pain and function disorder of patients with chronic rheumatoid arthritis,and also improve the markers such as plasma RF.
     结论射频作用于肾上腺区可减轻慢性类风湿性关节炎患者的疼痛和功能障碍,改善血浆类风湿因子等指标。
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  相似匹配句对
     RF PLASMA ANNEALING
     射频等离子退火
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     plasma;
     血浆游离DNA ;
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     On the Experiment of Low Press RF Plasma Body
     低压射频等离子体实验研究
短句来源
     The Monolithic RF
     射频电路的单片集成
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     Plasma Etching
     等离子体刻蚀
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  plasma rf
To introduce large amount of peroxides on the surface of PU foam, we studied the effect of plasma rf-power and treatment time on the maximum grafting of PAAc.
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A radiofrequency capacitively coupled plasma (rf CCP) with tip-ring electrode geometry has been used for the analysis of Al, Co, Cr, Cu, Mn, Mo, Ni, and V in low and medium alloyed steel.
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Initial experiences using a bipolar plasma RF tissue ablation device for tumor debulking enhanced vertebroplasty removal have been promising.
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Due to its distinctive benefits, bipolar plasma RF technology is uniquely suited to debulking tumor tissue prior to cement augmentation.
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         The effects of various technique parameters, such as dilute ratio of SiH4 gas, equilibrium pressure of reaction gas, substrate temperature, plasma RF power and DC negtive bias voltage, on the quality of ncSi∶H films grown by PECVD were discussed. The new approach used to improve the quality of the thin films was discussed.
            研究了PECVD生长ncSi∶H膜过程中SiH4气体稀释比、平衡反应气压、衬底温度、等离子体射频功率和直流负偏压等各种工艺参数对生成膜层质量的影响,探讨了提高膜层质量的新途径
文摘来源
         Objective To investigate the clinical efficacy of soft palate ablation with plasma radiofrequency(RF) at low temperature on mild obstructive sleep apnea hypopnea syndrome(OSAHS).Method 18 patients with mild OSAHS were selected.The polysomnography examinations were carried out before and 8 weeks after RF operation respectively.The length of soft palate and uvula,snoring scale and Epworth sleepiness score(ESS) were also compared.The main adverse reactions were observed during and after the...
            目的 探讨采用等离子低温射频术对轻症阻塞性睡眠呼吸暂停低通气综合征 (OSAHS)患者行软腭部消融的临床疗效。方法 选择 18例轻度OSAHS患者 ,分别于术前和术后 8周行多导睡眠图等检查 ,比较软腭长度、悬雍垂长度、鼾声评级及Epworth嗜睡程度评分 ,观察术中、后的主要反应。结果 患者射频治疗前和治疗 8周后多导睡眠参数比较显示 :治疗后Ⅰ +Ⅱ期睡眠 /总睡眠时间 (TST) (% )明显缩短 ,Ⅲ +Ⅳ期睡眠 /TST (% )明显延长、睡眠效率 (TST/总记录时间 % )及最低脉氧饱和度 (LSpO2 )均显著提高 (P <0 .0 5 ) ;此外 ,呼吸暂停低通气指数的减低以及打鼾时间 /TST的缩短均较治疗前相差非常显著 (P <0 .0 1)。患者射频治疗 8周后软腭长度及悬雍垂长度的缩短及鼾声评级的降低均较治疗前相差非常显著 (P <0 .0 1)。Epworth嗜睡程度评分亦较治疗前明显降低 (P <0 .0 1)。软腭射频术后对疼痛、讲话及吞咽的影响的评分标准 ,18例患者术后 1~ 3天对以上三项的影响基本在轻度以内 ,术后 7天时影响又较 1~ 3天时进一步改善。结论 等离子低...
文摘来源
         A novel technique to generate inductively coupled plasma(ICP) with high density has been successfully developed,in which a symmetrical,uniform and spoke-shaped Faraday shield is installed between the inductive coil and the dielectric window in the ICP source.The many strengths of the shield include considerable reduction of plasma rf potential,which strongly interferes plasma evaluation,decrease of discharge current of the coil,damping of the differential magnetic field signal,and ne...
            感应耦合等离子体(ICP)是微电子工业刻蚀高精度沟槽结构的首选高密度等离子体源。研究ICP的电特性与等离子体电学参量的变化显得非常重要。本文中,在平板型ICP源的感应线圈和介质窗口之间,使用了对称、均匀、呈辐射状的法拉第屏蔽板。结果表明,屏蔽板的使用不仅极大地降低了干扰等离子体参量测量的等离子体射频电位,而且也降低了线圈中的放电电流和等离子体中的轴向微分磁场信号强度,但Ar等离子体的发射光谱表明,法拉第屏蔽的采用对等离子体功率吸收的影响不大。对测量信号中出现的高次谐波行为也做了定性的讨论。
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