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gain-guided
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  增益导引
     The experiment and analysis of waveguide for gain-guided phase-locked diode laser arrays
     增益导引锁相列阵激光器实验及波导分析
短句来源
     A gain-guided GaAlAs/GaAs phase-locked laser array
     增益导引GaAlAs/GaAs锁相列阵激光器
短句来源
     Experimental study on gain-guided waveguide array (1×10) CO_2 laser
     增益导引(1×10)列阵波导CO_2激光器的实验研究
短句来源
     A gain-guided GaAlAs/GaAs phase-locked laser array is described, which consists of multi-stripes made by Zn diffusion with oxide mask.
     本文报道采用氧化物掩蔽Zn扩散平面条形结构的增益导引GaAlAs/GaAs锁相列阵激光器的工艺和特性。
短句来源
  “gain-guided”译为未确定词的双语例句
     Mode Locking Pulsation in Single Gain-Guided Mode Semiconductor Lasers
     单模增益波导半导体激光器的锁模自脉动
短句来源
     Secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of VCSELs, and then studied the influences of the oxide-confining region with different position or thickness, and the different sizes of the gain-guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region.
     其次,从电极电压入手,计算出激光器中的等势线分布,并对不同深度处的电压和电流分布进行比较,研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响;
短句来源
     An optimized comprehensively analytical thermal model was developed in accordance with interior heating characteristics of a gain-guided,top-emitting vertical-cavity surface-emitting laser with c. w. operation under room temperatures.
     依据增益导波垂直谐振腔顶面发射半导体激光器热区特点与室温连续波运行条件建立了一个优化的全解析热模型,对AlInGaAs/AlGaAs垂直谐振腔激光器的横向温度效应进行了详细的解析计算分析,其完全的解析表达展示了更加清晰的横向热场物理图像,对于器件内部热场变化规律的理论预期与实验结果完全符合.
短句来源
  相似匹配句对
     LOSS AND GAIN
     得与失
短句来源
     THE CODING GAIN OF MEMORIES
     存储器的编码增益
短句来源
     On-the-Fly Gain Control
     运行中可编程的增益控制
短句来源
     The Experiments of Gain-clamped SOA
     增益钳制半导体光放大器的实验研究
短句来源
     Guided Democracy
     有领导的民主(印度尼西亚)
短句来源
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  gain-guided
We have also grown gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/lnAs multi-quantum well active region using MOCVD.
      
The devices consist of an index-guided straight section and a gain-guided tapered section.
      
Simple relations for the phase distribution of the fundamental mode of gain-guided lasers are derived, yielding simple, approximate analytic expressions for the far-field distribution parallel to the junction in the case of strong astigmatism.
      
We have made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP and InPSb SLS active regions.
      
The influence of different thermal loads on the 2D temperature distribution in AlGaAs/GaAs gain-guided laser arrays is investigated.
      
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As the gain-guided modes in semiconductor lasers are not energy-orthogonal,anyone of these "improper" modes should be composed of a set of energy-orthogonal "pro-per" modes.We further propose that under certain suitable conditions,a new mecha-nism of first order mode locking pulsation in a single gainguided mode semiconductorlaser is quite possible. This possibility has been verified theoretically.

本文从理论上提出由于增益波导各模式间不满足功率正交关系,因而每条模式应由若于条满足功率正交关系的本征模式所组成,故在一定条件下这些本征模式有可能产生一阶锁模自脉动的新机制.

A gain-guided GaAlAs/GaAs phase-locked laser array is described, which consists of multi-stripes made by Zn diffusion with oxide mask. A typical threshold current of less than 200mA and an output power of more than 240mW were obt ained, and the phase-locking is shown in the far field patterns.

本文报道采用氧化物掩蔽Zn扩散平面条形结构的增益导引GaAlAs/GaAs锁相列阵激光器的工艺和特性。获得了阈值电流小于200mA,输出功率大于240mW的实验结果。远场测试表明其具有良好的锁相特性。

The lateral mode behavior of a uniform phase--locked diode laser array isanalysed in this paper by applying a simple model of broad--area semiconductorlaser and a perturbation theory. It is shown that the array operates in the Nthorder mode in all probability for the conventional gain--guided and index--guidedLD arrys. But higher--order modes (>N) may exist for gain--guided laser array.The fundamental lateral mode will be obtained in uniform anti--index--guided la-ser arrays. Its far--field will be a three--lobe...

The lateral mode behavior of a uniform phase--locked diode laser array isanalysed in this paper by applying a simple model of broad--area semiconductorlaser and a perturbation theory. It is shown that the array operates in the Nthorder mode in all probability for the conventional gain--guided and index--guidedLD arrys. But higher--order modes (>N) may exist for gain--guided laser array.The fundamental lateral mode will be obtained in uniform anti--index--guided la-ser arrays. Its far--field will be a three--lobe pattern due to the existence of pe-riodic perturbation, and its energy is mainly in the central lobe.

本文从宽接触半导体激光器的简单模型出发,运用微扰理论分析了均匀分布锁相列阵半导体激光器的侧模行为。分析表明,对增益导引、折射率导引锁相列阵,器件一般以N阶模工作,但在增益导引列阵中将会出现大于N的高阶模。反折射率导引均匀分布锁相列阵可获得基侧模工作,其远场由于周期性微扰的作用表现为三瓣,能量主要集中于中心瓣上。

 
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