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sheath voltage
相关语句
  鞘层电压
     The value of the sheath voltage depends on the temperature and the component of the plasma.
     鞘层电压与等离子体的温度及等离子体组分有关.
短句来源
     Detec-ting plasma cloud with a probe, experiments proved that the detecting sig-nal is very closed to sheath voltage, which is related to temperature andplasma component of detecting spot.
     采用探针检测等离子弧焊接中的等离子云,其检测信号与鞘层电压密切相关。
短句来源
     A non power supply probe was developed to detect the plasma cloud voltage, which consists of plasma arc voltage gradient and plasma sheath voltage.
     文中采用无源探针对由等离子弧梯度电压和等离子鞘层电压构成的等离子反翘(等离子云)电压进行检测。
短句来源
  “sheath voltage”译为未确定词的双语例句
     Change of the induced sheath voltage due to renovation of power lines and its compensation
     电缆线路改造引起的护层感应电压变化及其补偿
短句来源
     A General Formula for Induced Cable Sheath Voltage
     电缆铅包感应电压的通用算式
短句来源
     Detection of plasma sheath voltage in plasma arc welding
     穿孔等离子弧焊接中等离子云的检测
短句来源
     It has been shown form numerical results that as increasing the discharge pressure, ion kinetic energy, the instantaneous sheath voltage drop, the electron sheath thickness are decrease, and ion density isincrease.
     数值结果表明:随着放电气压的升高,离子在鞘层中的动能变小和密度变大,电极上鞘层的瞬时电压下降,以及电子鞘层的瞬时厚度变薄;
短句来源
     The influences of the above "external" parameters can be universally attributed to the "inner" parameter of substrate sheath voltage drop.
     同时改变耦合天线鞘层、基片鞘层、地鞘层处的电子温度对多稳态回滞宽度的大小影响较小,但当单独改变基片鞘层的电子温度时,多稳态回滞宽度随电子温度增大而减小。
短句来源
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  相似匹配句对
     The value of the sheath voltage depends on the temperature and the component of the plasma.
     鞘层电压与等离子体的温度及等离子体组分有关.
短句来源
     A General Formula for Induced Cable Sheath Voltage
     电缆铅包感应电压的通用算式
短句来源
     voltage. with the increase of r.
     放电电压增加 ,热稳定性增加。
短句来源
     Measurement of Voltage
     电压的测量
短句来源
     and hydrophobicity of the hyphal sheath.
     菌根菌套的疏水性作用。
短句来源
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  sheath voltage
The etch rate of SiO2 depended more strongly on the sheath voltage than on the F-to-Cl ratio.
      
The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage.
      
The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching.
      
The electric field is directly related to the sheath ion and electron densities, the sheath voltage, and the displacement current density.
      
The particle balance in the ionizing layer is determined by the recycling coefficient, which, in turn, depends on the cathode temperature and the sheath voltage.
      
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Introducing a loading ratio and spacing coefficient of grouped power cables in parallel , a general formula in which the calculation of induced cable sheath voltage could be easily obtained that facilitates the designing work of cable circuits.

在多回路平行电缆的铅包感应电压计算中,引入负载比和距离系数,导出的通用算式,可以给电缆线路设计工作提供方便。

Glow discharge plasma is a non-equilibrium system. The formulae, of the electron current collected by planar, spherical, cylindrical probes have equiform when the sheath voltage is negatiye, and different when the sheath voltage is positive. The derived formulae show that the electron current collected by probes has continuity at sheath voltage being zero, in the meantime, the derivative of electron current with respect to sheath voltage reach the maximum.

导出了静电探针在非平衡态的辉光放电等离子体中收集电子流的公式,证明了在探 针鞘电压为负值时,对平板形、球形、圆柱形探针具有相似的公式。当探针鞘电压为正 值时不同形状的探针收集电子流的公式是不同的。在鞘电压为0点附近,探针收集的电 子流是连续的。而且电子流对鞘电压的一次微商在鞘电压为0时达到最大值。这可以作 为测量等离子空间电位的依据。

On the basis of theory of plasma sheath,the paper expounds the mechanism that plate or probe has negative potential when detecting plasma efflux or plasma cloud.If the probe is located in the plasma,there is a negative electromotive force in the probe.It offers the formula to compute plasma cloud voltage.The value has only something to do with temperature and plasma component.A device of detecting plasma cloud without power supply is designed.The keyhole is formed if the sheath voltage is zero.The experiment...

On the basis of theory of plasma sheath,the paper expounds the mechanism that plate or probe has negative potential when detecting plasma efflux or plasma cloud.If the probe is located in the plasma,there is a negative electromotive force in the probe.It offers the formula to compute plasma cloud voltage.The value has only something to do with temperature and plasma component.A device of detecting plasma cloud without power supply is designed.The keyhole is formed if the sheath voltage is zero.The experiment proves the theory of the sheath.At the same time,the paper gives the right location of probe to detect the plasma cloud.

应用天体物理等离子鞘层理论的知识 ,分析金属板测量尾焰时产生电压和探针测量等离子云时产生电压的原因。当把探针放置在等离子云中 ,由于等离子体的特殊性 ,将在探针上产生了负电位 ,与工件电位差就是鞘层电压 ,并给出鞘层电压的计算公式 ,通过分析发现 ,鞘层电压大小仅仅与检测处等离子体温度和成分有关。提出了一种用无电源探针检测等离子云的新方法 ,通过检测等离子云中探针上产生的鞘层电压是否为零来判断小孔是否形成。试验验证了鞘层理论在等离子弧焊接中应用的正确性 ,同时给出了探针放置的最佳位置。

 
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