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photovoltaic performances
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  光伏特性
     AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc Si:H/ c Si solar cells.
     运用美国宾州大学发展的AMPS程序模拟分析了n 型纳米硅 (n+ nc Si:H) p 型晶体硅 (p c Si)异质结太阳电池的光伏特性 .
短句来源
     AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si∶H/c-Si solar cells.
     文章运用美国宾州大学发展的 AMPS程序模拟计算了 n-型纳米硅 ( n+ -nc-Si∶ H) /p-型晶体硅 ( p-c-Si)异质结太阳电池的光伏特性
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  “photovoltaic performances”译为未确定词的双语例句
     The cells were produced by low pressure MOVPE technique. The photovoltaic performances of cells with p+- p--n--n+ structure increased obviously. The efficiency of GaInP2/GaAs tandem cells is up to 23. 78% (AM0, 2cm×2cm, 25℃).
     实验结果证明,p~+-p~--n~-n~+结构的GaInP_2顶电池的光伏性能和采用这种结构的GaInP_2/GaAs叠层电池的光伏性能都得到显著改善,叠层电池的效率达到了23.78%(AM0,2cm×2cm,25℃)。
     Influence of Bandedge Discontinuities on the Photovoltaic Performances of a-Si/c-Si(HIT)'s Heterojunction Structure
     能带不连续性对a-Si/c-Si(HIT)异质结构光伏特性的影响
     The cells are irradiated by protons with an energy of 5 20 MeV up to a fluence ranging from 1×10 9 to 7×10 13 cm -2 , and then the change of the photovoltaic performances is measured at AM0. It is shown that the performances of the cells keep no change under 1× 10 9 cm -2 irradiation.
     结果表明 :注量低于 1× 10 9cm- 2 的质子辐照不会引起太阳电池性能的变化 ; 当注量增加为3× 10 12 cm- 2 时 ,5 ,10 ,2 0MeV质子辐照引起的太阳电池性能参数Isc的衰降变化分别是原值的80 % ,86 % ,90 % ;
短句来源
     PHOTOVOLTAIC PERFORMANCES OF FLUORINATED PERYLENE DIIMIDE DOPED POLYTHIOPHENE THIN FILMS
     氟代苝酰亚胺掺杂聚噻吩薄膜的光伏性能
短句来源
     Hydrogen passivation is carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrate that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%.
     三类完成电极制作的多晶硅太阳电池用于氢纯化试验 ,伏安特性测试结果表明 ,经过等离子体氢纯化后的太阳电池性能都有所提高 ,电池的光电转换效率相对改善高达 1 0 .6 %。
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  相似匹配句对
     The main performances are.
     本机组的主要性能为;
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     B.W. to the aircraft performances.
     电传飞控 /主动控制对飞机性能的影响。
短句来源
     Performances of Photovoltaic Cells Based on Se-Containing Low-Bandgap Polymer
     基于含硒窄带隙聚合物太阳能电池的性能
短句来源
     PHOTOVOLTAIC PERFORMANCES OF FLUORINATED PERYLENE DIIMIDE DOPED POLYTHIOPHENE THIN FILMS
     氟代苝酰亚胺掺杂聚噻吩薄膜的光伏性能
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     Applications of Photovoltaic Devices
     光伏器件的应用
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  photovoltaic performances
It was found that the dark and photovoltaic performances of the device depended strongly on this contact.
      
The photovoltaic performances of the samples were researched on the basis of following device groups prepared as explained in Sec.
      


In this paper,the internal electrical field distribution of PIN device is calaulated by the performance parameter of a-Si material,and the optimum intrinsic layer is determined under the full collection. Moreover, using these results,the photovoltaic performance of single and tandem solar cells of Eg=1.9eV a-Si:H and Eg=1.5eV a-Si_(1-x):Ge_x:H is determined, critically. Our calculated results of single a-Si_(1-x):Ge_x:HPIN and tandem a-Si:H PIN/a-Si_(1-x):Ge_x:PIN solar cells agree with MITCHELL'S...

In this paper,the internal electrical field distribution of PIN device is calaulated by the performance parameter of a-Si material,and the optimum intrinsic layer is determined under the full collection. Moreover, using these results,the photovoltaic performance of single and tandem solar cells of Eg=1.9eV a-Si:H and Eg=1.5eV a-Si_(1-x):Ge_x:H is determined, critically. Our calculated results of single a-Si_(1-x):Ge_x:HPIN and tandem a-Si:H PIN/a-Si_(1-x):Ge_x:PIN solar cells agree with MITCHELL'S and DALAL'S,respectively.

本文根据a-Si材料的性能参数,计算了pin器件中的结电场分布ε(x)及其极小值ε_(min),求出在一定条件下的满足全收集的最佳(大)i层厚度,并在这个基础上较严格地计算了E_(g1)=1.9eV的a-Si:H和E_(g2)=1.5eV的a-Si:Ge:H两种材料的pin单结太阳电池及由它们组成的二重结器件的光伏特性,在条件相近的条件下,a-Si:Ge:H pin单结太阳电池的效率与Mitchell的实驻结果相当接近。我们的二重结计算结果与DMM在相近条件下估算的结果接近。

The photovoltaic effect of C 60 and its complex was measured in the photoelectrochemical cell,the influence factors of photovoltaic effect of the fullerene(complex)/GaAs heterojunction electrode was studied.The results have indicated:1.The photovoltaic effect of (n+n) heterojunction electrode fomed by fullerene(complex)and GaAs is supper.2.I - 3/I -is a kinds of better redox couple.The couple of BQ/H 2Q isnt fit for fullerene(complex)/GaAs electrode.3.The photovoltaic performance...

The photovoltaic effect of C 60 and its complex was measured in the photoelectrochemical cell,the influence factors of photovoltaic effect of the fullerene(complex)/GaAs heterojunction electrode was studied.The results have indicated:1.The photovoltaic effect of (n+n) heterojunction electrode fomed by fullerene(complex)and GaAs is supper.2.I - 3/I -is a kinds of better redox couple.The couple of BQ/H 2Q isnt fit for fullerene(complex)/GaAs electrode.3.The photovoltaic performance of fullerene(complex)/GaAs electrode at 1μm for thickness of fullerene(complex)film is the best.4.The photovolatic property of fullerene complex is better than that of fullerene.5.As far as fullerene complex with different organno metal group is concerned,the ΔV in proper order is as follows:C 60 Pd(PPh 3) 2>C 60 Pt(PPh 3) 2>C 60 Pt[P(n-C 4H 9) 3] 2.6.For C 60 [Pt(PPh 3) 2] n,the photovoltaic effect increase withn increasing.

在光电化学电池中测定了 C60 及 C60 配合物的光伏效应 ,研究了影响富勒烯 (配合物 ) /砷化镓异质结电极光伏效应的因素。结果表明 :1.富勒烯 (配合物 )与 Ga As组成 ( n+n)异质结电极后具有更优良的光电转化性能。 2 .I-3 / I-是较好的介质电对。 3.富勒烯 (配合物 )厚度在 0 .5— 2μm时的光伏效应最大。 4 .富勒烯配合物比单纯富勒烯具有更大的光伏效应值。 5.对不同金属有机基团的配合物而言 ,光伏效应由大到小有以下变化规律 :C60 Pd( PPh3) 2 >C60 Pt( PPh3) 2 >C60 Pt[P( n-C4 H9) 3]2 。 6.对 C60 [Pt( PPh3) 2 ]n 而言 ,随着 n值增大 ,光伏效应增大

The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×10 13 cm -2 .It is demonstrated that the irradiation-induced degradation in the photovoltaic performance of the solar cells exists mainly in the short circuit current and the irradiation damage can be partly recovered by low temperature annealing at 200℃.In addition,it is found that the borosilicate...

The investigation on proton irradiation and thermal annealing of AlGaAs/GaAs solar cells has been reported.The energy of the proton irradiation is 325keV and the fluences are ranging from 5×10 10 to 1×10 13 cm -2 .It is demonstrated that the irradiation-induced degradation in the photovoltaic performance of the solar cells exists mainly in the short circuit current and the irradiation damage can be partly recovered by low temperature annealing at 200℃.In addition,it is found that the borosilicate cover glass has an obvious protection effect against the proton irradiation.

对 Al Ga As/Ga As太阳电池进行了质子辐照和热退火实验 .质子辐照的能量为 32 5 ke V,辐照的剂量为 5×10 1 0— 1× 10 1 3cm- 2 .实验结果表明 ,质子辐照造成了 Ga As太阳电池光伏性能的退化 ,其中短路电流的退化比其它参数的退化更为明显 .退火实验结果表明 ,2 0 0℃的低温退火可以使得辐照后的电池的光伏性能得以部分恢复 .此外 ,实验结果还指出 ,在 Ga As太阳电池表面加盖一层 0 .5 mm的硼硅玻璃盖片可以明显地减少质子辐照对 Ga As太阳电池性能的损伤

 
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