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hydrogen diluted
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  “hydrogen diluted”译为未确定词的双语例句
     Synthesis of Nanostructured SiC Films by Plasma Enhanced Chemical Vapor Deposition with Hydrogen Diluted Hexalmethyldisiloxane as Precursor
     HMDSO/H_2等离子体化学气相沉积非晶包覆纳米α-SiC薄膜的实验研究
短句来源
     The nc-Si: H films are prepared by the high purity hydrogen diluted methane as the reactive gases and actived at r. f. and d.
     本文在等离子体增强化学气相淀积(PECVD)系统中,以高纯H_2高度稀释SiH_4为反应气体源,在射频和直流双重功率源的激励下制备成功具有纳米结构的nc-Si:H薄膜.
短句来源
     Nanostructured SiC films,with SiC grains embedded in amorphous matrix,were grown by plasma enhanced chemical vapor deposition(PECVD) with hydrogen diluted hexalmethyldisiloxane(HMDSO) as the precursor.
     本文利用六甲基二硅氧烷(HMDSO)作为先驱物质、氢气为稀释气体,进行了等离子体化学气相沉积碳硅薄膜的实验研究。
短句来源
  相似匹配句对
     . H-O hydrogen bonding.
     X -射线单晶结构分析表明 ,该化合物的羧基O和配位水分子O通过O…H—O氢键在链方向上和链之间形成网状结构 .
短句来源
     Hydrogen in the Future
     氢能在可持续发展战略中的应用前景展望
     PREPARATION OF NANOCRYSTALLINE SILICON CARBON FILMS BY HEAVILY HYDROGEN DILUTED SILANE AND ETHENE
     高氢稀释硅烷加乙烯法制备纳米硅碳薄膜
短句来源
     Silicon Films Grown by PECVD in a High Concentration of Hydrogen-diluted Silane
     以高氢稀释硅烷为反应气源沉积硅薄膜
短句来源
     Diluted needed concentration.
     按不同倍数稀释成所需终浓度。
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  hydrogen diluted
Viscosity, thermal conductivity, diffusion of hydrogen diluted in argon at high temperatures
      
The gas turbine will operate on hydrogen diluted with nitrogen to produce a CO2 free exhaust gas.
      


Utilizing highly hydrogen-diluted silaae and lower growth rate, the heavy phosphorus-doped hydrogeaated amorphous silicoa (N+α-Si:H) films with electrical conductivity as high as 5 -36Ω-1 -cm-1 have been fabricated with PECVD apparatus. A novel 2DEG Si/N+αa-Si:H HBT has been prepared with thess films, which is a breakthrough in the area of the silicon microwave power

采用低浓度硅烷,低生长速率,在PECVD系统中制得高掺杂氢化非晶硅(N~+α-Si:H)薄膜,其电导率高达5~36Ω~(-1)cm~(-1)。应用该技术制成了新型二维电子气Si/N~+α-Si∶H异质结双极型晶体管,在硅微波功率异质结双极型晶体管研制上取得重大突破。

We have fabricated nano-size crystalline silicon Films by using high hydrogen diluted si-lane as the reactive gas and activated at r.f+D.C, double power sources in a conventional PE-CVD deposition system. The structure of the g town films were evaluated by means of HREM,Raman scattering spectra, X-ray diffraction pattern, IR transmission spectra and ultra-violetray analysis. The results show that there are novel structure performances and strange physi-cal properties, so, the nc-Si:H films have their unique...

We have fabricated nano-size crystalline silicon Films by using high hydrogen diluted si-lane as the reactive gas and activated at r.f+D.C, double power sources in a conventional PE-CVD deposition system. The structure of the g town films were evaluated by means of HREM,Raman scattering spectra, X-ray diffraction pattern, IR transmission spectra and ultra-violetray analysis. The results show that there are novel structure performances and strange physi-cal properties, so, the nc-Si:H films have their unique features and are different from a-Si:Hand μc-Si:H films.

在常用的PECVD电容式耦合沉积系统中,使用高氢稀释硅烷为反应气氛,在r.f.+DC双重功率源激励下制备出具有纳米相结构的硅薄膜.使用HREM,Raman光散射,X射线衍射以及红外和紫外光谱分析手段广泛地检测了其结构特征.指出,纳米硅(nc-Si:H)薄膜由于具有一系列新的结构特征使它脱颖于熟知的 a-Si:H及 μc-Si:H范畴,从而显示出它自己的独特性能.

The progress in the technology for preparation of nano-crystalline silicon(nc-Si: H) films has been reviewed. The review is centered mainly on introducing the growth process and mechanism of the nc-Si : H films, which include the high concentraction hydrogen diluted silane, microwave hydrogen radical-assisted chemical vapor deposition, layer by layer technique and veryhighfrequency digital chemical vapor deposition. This paper has pointed out that hydrogen radical is the key for the developing...

The progress in the technology for preparation of nano-crystalline silicon(nc-Si: H) films has been reviewed. The review is centered mainly on introducing the growth process and mechanism of the nc-Si : H films, which include the high concentraction hydrogen diluted silane, microwave hydrogen radical-assisted chemical vapor deposition, layer by layer technique and veryhighfrequency digital chemical vapor deposition. This paper has pointed out that hydrogen radical is the key for the developing of the above nc-Si:H deposition technologys and will play important role in the future technology.

本文综述了纳米硅薄膜制备新技术的进展。着重介绍了高氢稀释硅烷蚀刻法,微波氢基团增强化学气相沉积,逐层法和高频数值等离子体化学气相沉积技术制备纳米硅薄膜的沉积过程和生长机制.本文指出氢基团为各项新技术发展的关键并将在今后纳米硅薄膜制备技术发展中起重要作用。

 
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