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gated thyristor
相关语句
  栅控晶闸管
     A new structure to improve the turn off performance of the MOS gated thyristor
     改善栅控晶闸管关断特性的一种新结构
短句来源
     Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.
     光控 MOS栅固态继电器是由 MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
短句来源
  “gated thyristor”译为未确定词的双语例句
     A Novel Self protected MOS gated Thyristor
     自保护MOS栅晶闸管
短句来源
     A novel device called self protected MOS gated thyristor is reported for the first time.
     本文报告一种叫做自保护MOS栅晶闸管的新器件 .
短句来源
  相似匹配句对
     A Novel Self protected MOS gated Thyristor
     自保护MOS栅晶闸管
短句来源
     Numerical Simulation of Integrated Gated Commutated Thyristor Transparent Anode
     集成门极换向型晶闸管透明阳极的数值模拟
短句来源
     Complex Thermal Thyristor
     复合式温控晶闸管的研究
短句来源
     Thyristor Triggered with Fiber
     晶闸管的光纤触发技术
短句来源
     Mathematical Analysis of Gated Integrator
     门积分电路的数学分析
短句来源
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The maximum controllable current density of single cell MOS Gated thyristor devices is large but for the multicellular devices there is a significant reduction. Nonuniform turn off of cells has been shown to limit the maximum controllable current for large area device stractures. A new structure of MOS Gate to turn off thyristor depletion mode MOS Gate is described in this paper. The depletion mode MOS Gate can improve the nonuniform turn off of a multicellular device.

提出了一种MOS栅晶闸管的新的关闭栅结构——耗尽型MOS关闭栅,有效地改善了多元胞器件元胞关断的非均匀性.

A novel device called self protected MOS gated thyristor is reported for the first time.This device is parasitic latch up free,and exhibits the characteristic of output current decrease,instead of current saturation or increase at higher anode voltage.Therefore,the novel device possesses satisfactory forward biased safe operating area.The device protected point can be adjusted by customer through external applied input resistance and this improves the flexibility dramatically.In addition,the temperature...

A novel device called self protected MOS gated thyristor is reported for the first time.This device is parasitic latch up free,and exhibits the characteristic of output current decrease,instead of current saturation or increase at higher anode voltage.Therefore,the novel device possesses satisfactory forward biased safe operating area.The device protected point can be adjusted by customer through external applied input resistance and this improves the flexibility dramatically.In addition,the temperature coefficients of current and voltage at protected point are negative.Such a feature makes the device self protected more efficiently at high temperature.

本文报告一种叫做自保护MOS栅晶闸管的新器件 .这种器件无寄生闩锁效应 ,并在较高阳极电压下展现出电流下降而不是饱和或上升的特性 .因此 ,这种新器件具有令人满意的正偏安全工作区 .器件的保护点由用户外接输入电阻自行调节 ,极大增加了使用的灵活性 .此外 ,器件保护点电流和电压的温度系数均为负 ,这种特性使器件在高温工作时可更好地起自保护作用

A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the...

A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load.

报道了一种新结构的功率栅控晶闸管 ,称其为槽栅 MOS控制的晶闸管 (TMCT) .在该器件结构中 ,采用 U-MOS控制晶闸管的开启和关闭 .结构中不存在任何的寄生器件 ,因此 ,消除了在其它结构的栅控晶闸管中由寄生晶体管引起的各种问题 ,所以 TMCT会有优良的电特性 .实验结果表明 ,多元胞 TMCT (6 0 0 V,有源区面积0 .2 m m2 )的开态压降在 30 0 A / cm2 时为 1.2 5 V,最大可控电流在栅压为 - 2 0 V和电感负载下达到了 2 96 A/ cm2 .

 
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