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junction characteristics
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  结特性
     STUDY ON JUNCTION CHARACTERISTICS OF Ga_(1-x)Al_xAs/GaAs SOLAR CELL
     Ga_(1-x)Al_xAs/GaAs太阳电池结特性研究
短句来源
     Junction Characteristics of MOCVD and LPE GaAs Solar Cells
     MOCVD GaAs太阳电池的结特性
短句来源
     According to analysis of the energy band constructions of the solar cells,ZnTe:Cu layer is used as a back contact and an un-doped ZnTe layer is introduced as a buffer between p-CdTe and ZnTe:Cu layers,in order to improve the junction characteristics and carrier collection.
     通过对其能带结构的分析 ,采用ZnTe :Cu作背接触层 ,再在p CdTe和ZnTe :Cu之间引入不掺杂的ZnTe作过渡层 ,以改进这种电池的结特性和载流子收集。
短句来源
     The fabricated HBTs reveal good junction characteristics and DC current voltage behavior, and the common emitter current gain reaches the value of 320 at collector current density of 280 A/cm 2. This result indicates that the undoped spacer suppresses diffusion of Be dopant and avoids the performance degradation introduced by the deflection between pn junction and heterojunction.
     测试结果表明该类器件具有良好的结特性 ,在集电极电流密度 2 80 A/cm2时其共发射极电流增益达 32 0。 由此说明非掺杂隔离层的引入有效地抑制了由于基区 Be扩散导致的 pn结与异质结偏位及其所引起的器件性能劣化。
短句来源
  “junction characteristics”译为未确定词的双语例句
     The calculated results for Hg_(0.8)Cd_(0.2)Te PN junction show that the direot interband tunneling is an important current mechanism which limits junction characteristics.
     对Hg_0.8CD_0.2TePN结的计算结果表明,直接带间隧道是限制结特性的一种重要的电流机构。
短句来源
     Then the rectifying junction characteristics of metal-ferroelectric film and different conductive mechanisms in different voltage ranges(0~±6 V) are discussed.
     并讨论了金属–铁电薄膜所形成的整流接触特性,以及金属/SiO2/Si基Bi4Ti3O12铁电薄膜系统在不同电压范围(0~±6V)的导电机制。
短句来源
     Mathematical Verification on the g-Post Symmetrical H-Plane Waveguide Junction Characteristics Under Eigenvector Excitation
     本征矢激励下H面g重对称波导结特性的证明
短句来源
     And the rectifying junction characteristics of metal-ferroelectric film and different conductive mechanism in different voltage range were discussed.
     讨论了金属-铁电薄膜形成的整流接触对正反向电流不对称的影响,以及不同电压范围的导电机制。
短句来源
     Meanwhile, the liquid-solid junction characteristics of the depo-sition system are studied, and the factors affecting the quality of image deposition are discussed.
     同时本文对该体系的液-固结特性进行了研究,对影响成像沉积质量的因素进行了讨论。
短句来源
更多       
  相似匹配句对
     And the characteristics of the G.
     通过仿真和实验,也验证了G.
短句来源
     The characteristics of G.
     论文首先对语音编码的各种方案进行了比较,并对G.
短句来源
     I-V CHARACTERISTICS OF ANOMALOUS JOSEPHSON TUNNELING JUNCTION
     非理想约瑟夫逊隧道结的Ⅰ-Ⅴ特性
短句来源
     Phase Characteristics of Ferrite Junction Circulator
     结环行器的相位特性
短句来源
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  junction characteristics
The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated.
      
For example, for samples annealed at 436°C (PHg≈2 atm), in addition to p-type activation, we observe a significant improvement of p/n junction characteristics independent of the As source; i.e.
      
The suppression of Ga diffusion into the Ge film and its effect on pn-junction characteristics were also studied by growing a thin Ge film on GaAs at less than 300° C prior to the normal Ge film growth at 500° C.
      
Atomic Ge distribution profiles, carrier con-centration profiles, and junction characteristics of Ge-implanted GaAs planar diodes are also presented.
      
Blue LEDS with characteristics very similar to p-n junction characteristics have been obtained.
      
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In this paper forward Ⅰ-Ⅴ characteristics were determined to identify the dominat current mechanisms and to calculate I01, I02, A1, A2 and the effective carrier lifetimes in the deplation region. Results show that the Voc and FF increase with the decreasing of I02 and A2 respectively.A number of dark region can be observed in EBIC determination where the induced current decreased dratically. The Electron prob analysis shows that the Fe, Si, Al impurity clusters are found in the p-GaAs region. Fe in GaAs substrate...

In this paper forward Ⅰ-Ⅴ characteristics were determined to identify the dominat current mechanisms and to calculate I01, I02, A1, A2 and the effective carrier lifetimes in the deplation region. Results show that the Voc and FF increase with the decreasing of I02 and A2 respectively.A number of dark region can be observed in EBIC determination where the induced current decreased dratically. The Electron prob analysis shows that the Fe, Si, Al impurity clusters are found in the p-GaAs region. Fe in GaAs substrate with concentration of 4×1015cm-3 is determined by flameless atomic adsorption spectropho-tometry.Having studied the junction characteristics a new procedure was developed for the preparation of the solar cell. High conversion efficiency of 18-19% at AM1 with a high Voc 1.01-1.05 and a high FF 0.81-0.82 were obtained together with the reduction in dark current and increasing in the effective minority lifetime.

本文报道了Ga_(1-x)Al_xAs/GaAs电池正向暗I—V特性,示出暗I—V曲线,I_(01)、I_(02)、A_1、A_2及扩展区少子有效扩散长度等计算值。确定了以复合电流为主要暗电流的电流输运机理。用双指数模型讨论了暗特性和输出特性的关系。获得了开路电压V_(oc)随I_(02)降低而提高,填充因子FF随A_2的降低而增加的实验结果。EB1C扫描照片示出GaAs电池的有源区中存在无数不规则黑区,单束感生电流在这些区域明显减弱。电子探针测出黑区为Fe、Si、Al的杂质团。非火焰原子吸收光谱测出GaAs衬底中含有4×10~(15)cm~(-3)的杂质铁。铁、硅杂质团是影响少子扩散长度和复合电流的主要因素。 通过改进工艺,降低了暗电流,提高了电池性能,V_(oc)(1.01-1.05)超过理论预期值,FF(0.81-0.82)达到理论预期值,转换效率(AM1)达18—19%。

Based on Kane's model of tunneling current, considering the influence of FermiDirac distribution function, the expressions of direot interband tunneling current and tunneling-limited (R_oA) product are deduced. The calculated results for Hg_(0.8)Cd_(0.2)Te PN junction show that the direot interband tunneling is an important current mechanism which limits junction characteristics. The effects of this current mechanism on I-V characterictics and R_oA product of Hg_(0.8)Cd_(0.2)Te PN junction, and their...

Based on Kane's model of tunneling current, considering the influence of FermiDirac distribution function, the expressions of direot interband tunneling current and tunneling-limited (R_oA) product are deduced. The calculated results for Hg_(0.8)Cd_(0.2)Te PN junction show that the direot interband tunneling is an important current mechanism which limits junction characteristics. The effects of this current mechanism on I-V characterictics and R_oA product of Hg_(0.8)Cd_(0.2)Te PN junction, and their dependence on P-and N-side doping concentration and operating temperature are analyzed. Comparisons of N~+P and P~+N configuration are given. In order to calculate tunneling current, the quasi Fermi levels on both sides of the junction are also calculated.

基于Kane隧道电流模型并考虑费密-狄拉克分布函数的影响,导出了直接带间隧道电流及相应的零偏压电阻-面积乘积R_0A的表达式。对Hg_0.8CD_0.2TePN结的计算结果表明,直接带间隧道是限制结特性的一种重要的电流机构。分析了这种电流机构对Hg_0.8CD_0.2TePN结伏-安特性及R_0A的影响,以及它们与PN结两侧掺杂浓度和工作温度的依赖关系。对N~+P和P~+N这两种结构的器件进行了比较。为了计算隧道电流,对结两侧的准费密能级也作了计算。

A method generating Be+ beam current using a gas ion source is presented in this paper. The behaviour of the infrared rapid thermal annealing (IRTA) of the Be+ implanted GaAs is compared with that of the furnace annealing (FA).The pn-junction characteristics of Be+ implanted GaAs and InGaAs have been measured. The results show that the Be+ implantation into compound semiconductors is an effective method to fabricate devices.

本文报道了在气体离子源中Be~+束流的引出,比较了Be~+注入GaAs的常规炉子热退火与红外快速退火行为,给出了Be~+注入GaAs和InGaAs形成的pn结特性。实验表明,用Be~+注入化合物半导体可作为制作器件的一种有效方法。

 
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