助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   thin bulk 的翻译结果: 查询用时:0.005秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

thin bulk
    很抱歉,暂未找到该词条的译词。
相关语句
  相似匹配句对
     THIN
     薄
短句来源
     Thin Bulk Effects in SOI Structure
     SOI结构中的薄体效应
短句来源
     Thin Film Bulk Acoustic Resonators and Applications
     薄膜体声波谐振器及其应用
短句来源
     bulk compound semiconductors;
     体化合物半导体;
短句来源
     Analysis of thin-b(?)d velocity,
     薄层速度分析
短句来源
查询“thin bulk”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  thin bulk
We observe that the branching ratios are sensitive to the location of the 4D brane and, in the second case, the width of the thin bulk, especially for the μ→eγ decay.
      
For thin bulk samples, absorption can be measured directly, by monitoring the intensity of the transmitted X-ray beam with an ion chamber.
      


The potential and carrier distribution in different parts of SOI structure are stu-died by using computer simulation.The resuats show that thin bulk effects occur in SOlstructure,with uniformly doped P-type recrystallization silicon film,when the thicknessof the film is less than the maximum thickness of the depletion layer.The higher thethreshold voltage the thicker the recrystallization film when the thickness of the innerdioxide is constant;whereas the lower the threshold voltage the thicker the inner...

The potential and carrier distribution in different parts of SOI structure are stu-died by using computer simulation.The resuats show that thin bulk effects occur in SOlstructure,with uniformly doped P-type recrystallization silicon film,when the thicknessof the film is less than the maximum thickness of the depletion layer.The higher thethreshold voltage the thicker the recrystallization film when the thickness of the innerdioxide is constant;whereas the lower the threshold voltage the thicker the inner dioxidewhen the film thickness is constant.The threshold voltage decreases as the inner dio-xide thickness increases and finally becomes a constant value not dependent on the th-ickness of inner dioxide.The interface states with positive charge in SOI structure fur-ther decrease the threshold voltage.Simulation analysis show that the principle designrule to prevent thin bulk effects in SOI structure is to make the thickness of the recrys-tallization film exceed the maximum thickness of the depletion layer, and to use lowdoping density silicon films and thick inner dioxide so as to decrease the influence ofthin bulk effects when the film, thickness is less than the maximum thickness of thedepletion layer.The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.The simula-tion shows that the expression of threshold voltage for SOI structure,using depletion ap-proximation,is very simple and more accurate.

本文使用计算机模拟技术,研究了SOI结构中各部分的电势分布和载流子分布.模拟结果表明:对于有均匀掺杂的P型再结晶硅膜的SOI结构,当硅膜厚度小平相应的最大耗尽层厚度时,会出现“薄体效应”.它表现为:在内层氧化层厚度一定时,再结晶膜愈厚,阈电压愈高;在再结晶膜厚度一定时,内层氧化层愈厚,阈电压愈低,最后达到一个定值,与内层氧化层的厚度无关.正界面电荷进一步降低了由P型再结晶膜构成的SOI结构的阈电压.模拟计算表明,为使SOI结构不出现薄体效应,设计原则就是使适当掺杂的再结晶膜厚度大于最大耗尽层厚度.在硅膜厚度小于最大耗尽层厚度时,为使薄体效应的影响减小,应该采用比较低的硅膜掺杂浓度,比较厚的内层氧化硅层.模拟计算表明,利用薄体效应,可以形成以单晶硅为衬底的,阈电压较低的新型薄膜MOS晶体管.模拟计算还表明,对于薄硅膜的SOI结构,用耗尽层近似推出的阈电压公式是一个简单和比较准确的公式.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关thin bulk的内容
在知识搜索中查有关thin bulk的内容
在数字搜索中查有关thin bulk的内容
在概念知识元中查有关thin bulk的内容
在学术趋势中查有关thin bulk的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社