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led epitaxial wafer
相关语句
  led外延片
     LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency.
     LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。
短句来源
  相似匹配句对
     LED Operation
     LED应用
短句来源
     Study of the Cleanness Optimized Technology on LED GaP Epitaxial Wafers
     LED-GaP外延晶片洁净优化技术的研究
短句来源
     Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers
     蓝宝石基LED外延片背减薄与抛光工艺研究
短句来源
     Study of GaP:ZnO LED epitaxial layer by microscopical optical method
     用微区光学方法研究GaP:ZnO红光外延片
短句来源
     AlGaInP epitaxial materials for high bright LED with red,orange and yellow color
     AlGaInP红、橙、黄光高亮度LED外延材料
短句来源
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The external quantum efficiency of(A1xGa1-x)0.5In0.5P light emitting diodes (LED) grown on GaAs substrate by lattice matching is limited by the absorptivity of the GaAs substrate. LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency. The device fabrication and device characteristics of 3 types of wafer bonding are described.

(Al_xGa_(1-x))_(0.5)In_(0.5)P高亮度发光二极管是在GaAs衬底上匹配外延的,它的外量子效率受限于吸收光线的GaAs衬底。LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。本文对上述三种晶片键合的器件制备过程和器件特点进行了描述。

The epitaxy technology of gallium nitride (GaN) based high brightness blue light emitting diode (HB-LED) materials grown by metal organic vapor phase epitaxy (MOVPE) was studied. The In_xGa_(1-x)N/GaN multiple-quantum-wells (MQWs) embedded epitaxial materials were characterized by high-resolution X-ray diffraction (HR-XRD), temperature dependent photoluminescence (TD-PL) spectra and injection dependent electroluminescence (ID-EL) spectra, respectively. The HR-XRD and TD-PL results indicate that the...

The epitaxy technology of gallium nitride (GaN) based high brightness blue light emitting diode (HB-LED) materials grown by metal organic vapor phase epitaxy (MOVPE) was studied. The In_xGa_(1-x)N/GaN multiple-quantum-wells (MQWs) embedded epitaxial materials were characterized by high-resolution X-ray diffraction (HR-XRD), temperature dependent photoluminescence (TD-PL) spectra and injection dependent electroluminescence (ID-EL) spectra, respectively. The HR-XRD and TD-PL results indicate that the HB-LED epitaxial wafers have excellent crystal quality with abrupt heterostructure interfaces. The blue-shift of the emission peak wavelength is less than 1 nm as the injection current varies from 2 mA to 120 mA, and the full width at half maximum (FWHM) of the electroluminescence spectrum at 20 mA is only 18 nm. These data are among the best results reported so far. Secondly, we discussed our work on dry etching of GaN related materials by inductively coupled plasma (ICP). For nonselective etching of AlGaN/GaN heterostructure, the root-mean-square (RMS) surface roughness of the etched sample measured by atomic force microscope (AFM) is only 0.85 nm. On the other hand, we have demonstrated selectivity as high as 60 for AlGaN over GaN.

通过对氮化镓(Galliumnitride,GaN)基蓝色高亮度发光二极管(Highbrightnesslightemittingdiode,HB LED)材料金属有机气相外延(Metalorganicvaporphaseepitaxy,MOVPE)生长技术的研究和优化以及在有源区内引入新型InxGa1-xN/GaN多量子阱(Multiplequantumwells,MQWs)结构,获得了高性能的HB LED外延片材料。高分辨率X射线衍射(HighresolutionX raydiffraction,HR XRD)和变温光致荧光谱(Temperaturedependentphoto luminescencespectra,TD PLSpectra)测量表明外延材料的异质界面陡峭,单晶质量优异,并由变注入电致荧光谱(Injectiondependentelectroluminescencespectra,ID ELspectra)测量获得:HB LED芯片的峰值发光波长在注入电流为2mA至120mA变化下蓝移量小于1nm,电致荧光谱的半高全宽值(Fullwidthhalfmaximum,FWHM)在注入电流为2...

通过对氮化镓(Galliumnitride,GaN)基蓝色高亮度发光二极管(Highbrightnesslightemittingdiode,HB LED)材料金属有机气相外延(Metalorganicvaporphaseepitaxy,MOVPE)生长技术的研究和优化以及在有源区内引入新型InxGa1-xN/GaN多量子阱(Multiplequantumwells,MQWs)结构,获得了高性能的HB LED外延片材料。高分辨率X射线衍射(HighresolutionX raydiffraction,HR XRD)和变温光致荧光谱(Temperaturedependentphoto luminescencespectra,TD PLSpectra)测量表明外延材料的异质界面陡峭,单晶质量优异,并由变注入电致荧光谱(Injectiondependentelectroluminescencespectra,ID ELspectra)测量获得:HB LED芯片的峰值发光波长在注入电流为2mA至120mA变化下蓝移量小于1nm,电致荧光谱的半高全宽值(Fullwidthhalfmaximum,FWHM)在注入电流为20mA时仅为18nm。此外,还介绍了GaN基材料感应耦合等离子体(Inductivelycoupledplasma,ICP)干法刻蚀技术。考虑实际需要,本文作者开发了AlGaN/GaN异质材料的非选择性刻蚀工艺,原子力显微镜(Atomicforcemicroscope,AFM)观察得到AlGaN/GaN刻蚀表面均方根粗糙度RMS仅为0.85nm,与外延片的表面平整度相当。还获得了AlGaN/GaN高选择比的刻蚀技术,GaN和AlGaN的刻蚀选择比为60。

The effects of plate rotation speed and jig pressure on the remove rate and surfaceroughness during the back lapping of sapphire-based LED epitaxial wafers are studied. The effects ofabrasive granularity are compared, and the relationship between surface roughness and polishingtime during the lapping process is also studied.All those works will be help to the improvement ofback-lapping and polishing technology.

研究了蓝宝石基LED外延片背减薄过程中去除速率和表面粗糙度与研磨转速和研磨压力的关系,比较了不同的磨料颗粒度对去除速率和表面粗糙度的影响,并研究了抛光过程中表面粗糙度随时间的变化规律,为背减薄与抛光工艺的优化提供了依据。

 
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