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semiconductor models
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  “semiconductor models”译为未确定词的双语例句
     This paper presents a new hybrid method of parameters extraction for semiconductor models,enlarging the selecting- scale of initial parameter values,and the efficiency of parameters extraction is improved also.
     本文对一般半导体器件模型参数提取提供了一个有效且可靠的方法,着重分析了一个类似于EM3模型的双极性晶体管高频线性增量模型进行参数提取的全过程,同时提出了各种辅助措施以使参数提取工作更加有效和精确. 克服了以往方法中收敛结果对参数初值非常灵敏及迭代速度缓慢的缺点,从而扩大了参数初值的选取范围,提高了参数提取效率。
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     models;
     五、发展的模式;
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     Optimal Scheduling Models of Semiconductor Manufacturing
     半导体制造系统的优化调度模型
短句来源
     Primary Base Of Numerical Models for Semiconductor Microsensor
     半导体微传感器的初级数值模型库
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     As for the recrystallization models,J.
     对于再结晶模型,针对所设定的变形条件,得出可用于计算再结晶的模型有J.
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     Semiconductor Refrigerator
     半导体冷藏箱
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  semiconductor models
The temperature dependence behaviour of the film and the various activation energies obtained have been explained by taking the existing grain boundary trapping models and other semiconductor models into account.
      
This paper presents a new approach for the implementation of semiconductor models.
      
Use SPICE to model a mixed electro-mechanical system allows good semiconductor models.
      
The transformer and semiconductor models can be used in either transient or frequency domain simulations.
      


In monocrystals of BaO, SrO and, CaO, data from electrical and optical conductivities, photdemission and absorption spectra are so diverse that an accurate energy diagram can not be depicted. This implies that the surface phenomena are more important than the bulk ones. The internal and external work functions obtained from BaO monocrystal film on Ir(lOO), being single valued, are not consistent with the wide distribution of work functions of tricarbonate cathodes measured by scanning low energy electron probe,...

In monocrystals of BaO, SrO and, CaO, data from electrical and optical conductivities, photdemission and absorption spectra are so diverse that an accurate energy diagram can not be depicted. This implies that the surface phenomena are more important than the bulk ones. The internal and external work functions obtained from BaO monocrystal film on Ir(lOO), being single valued, are not consistent with the wide distribution of work functions of tricarbonate cathodes measured by scanning low energy electron probe, indicating that the semiconductor model is not a correct description of commercial oxide cathode. AES measurements show that, the coatings are rich in oxygen, which negates that the oxygen vacancy acts as electron donor. But the fact that the excess bariums are responsible for electron emission may be reconciled with the deficiency of alkaline earth metals during life by the dynamical surface emission center model. This model suggests that an aggregate of atoms with excess barium absorbed on alkaline earth oxides can emit electrons efficiently, which can explain many phenomena observed by modern surface analysis techniques.

从BaO、SrO和CaO单晶的热电导、光电导、光电子发射和吸收光谱所测得的能级多而分散,不能得出一准确的能带图,这些情况说明表面能级比体内的更为重要。沉积在Ir(100)面上的BaO单晶膜的内外逸出功是单值的,它与用扫描低能电子探针所测得的三元炭酸盐的总逸出功的广泛分布有矛盾。这说明半导体模型并不能用来正确描述氧化物阴极。用Auger电子能谱仪发现二千小时寿命后涂层中氧多于碱土金属,但电子发射能力并不下降。这就否定了以氧缺位为施主的观点。然而超额钡仍然是发射电子的泉源,可以通过动态表面发射中心模型而与寿命中碱土金属下降统一起来。此模型提出了碱土金属氧化物原子团吸附有超额钡,可以有效地发射电子。这观点能解释许多用近代表面分析技术从氧化物阴极中观察到的现象。

This paper presents a new hybrid method of parameters extraction for semiconductor models,enlarging the selecting- scale of initial parameter values,and the efficiency of parameters extraction is improved also.Finally,three examples are given, and the results are compared with that obtained by the method described in literature.

本文对一般半导体器件模型参数提取提供了一个有效且可靠的方法,着重分析了一个类似于EM3模型的双极性晶体管高频线性增量模型进行参数提取的全过程,同时提出了各种辅助措施以使参数提取工作更加有效和精确.克服了以往方法中收敛结果对参数初值非常灵敏及迭代速度缓慢的缺点,从而扩大了参数初值的选取范围,提高了参数提取效率。使参数初值选择得偏离最佳点在250%左右范围内,都能收敛到该最佳点.在IBM-PC机上调试,通过了参数的提取程序.最后给出3个算例,并与文献中的方法进行了比较.

Power semiconductor models are important parts for circuit and system simulations.This poper reviews power device models, and shows how to construct any new power semiconductor model, with the general circuit simulator PSpice, by a composite model principle. The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and...

Power semiconductor models are important parts for circuit and system simulations.This poper reviews power device models, and shows how to construct any new power semiconductor model, with the general circuit simulator PSpice, by a composite model principle. The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.Parametric sensitive analysis of the models is performed, and validity of the composite model is discussed.

功率半导体模型是电路和系统仿真的重要部分。本文在回顾一般功率器件模型基础上,详细研究了在通用电路仿真器PSpice中怎样运用组合模型原理建立任一新的功率半导体模型。作为应用组合模型原理的实例,文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型,并和实际器件进行比较。最后讨论了组合模型的有效性。

 
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