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semiconductor layers
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  “semiconductor layers”译为未确定词的双语例句
     The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers.
     Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。
短句来源
     Differential Hall Effect(DHE)profiling of semiconductor can lead to better characterization of the behavior of semiconductor layers.
     差分霍尔效应纵断面描绘是表征半导体分层特性的重要手段。
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  相似匹配句对
     Semiconductor Photonics
     半导体光子学
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     Semiconductor nanomaterial
     半导体纳米材料
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     The distribution characteristics of infrared images of liquid-layers in etching process of semiconductor are studied.
     研究了半导体腐蚀过程中液层的红外热像分布特性。
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     Electrodeposition of NiFe thin films as buffer layers on semiconductor Si(111) substrates
     半导体Si(111)上电沉积NiFe缓冲层薄膜
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     Layers of gold market
     论黄金市场的层次性
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  semiconductor layers
We examine the grain formation during annealing of metallic contacts on multiple semiconductor layers by transmission electron microscopy (TEM).
      
The RC values of the NiInGe contacts were found to depend strongly on the volume fraction and the In concentration (x) of the InxGa1-xAs compound semiconductor layers, which were formed at the metal/GaAs interface.
      
Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces
      
The well-known four-point probe method of combined measurements of electrical conductivity and the Hall coefficient of semiconductor layers is developed further in the present work.
      
Voltage-temperature characteristics (VTC) of current carriers in semiconductor layers that are substantially narrower than the bulk cooling length are constructed in the temperature approximation.
      
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A phosphorus implanted p-Si layer with dose slightly higher than its critical value was studied by EER combined with stripping-etching technique. The concept of a certain optimal wavelength, named "Specially Effective Wavelength" (SEW), is introduced for the optical measurements of structurally disordered materials. At SEW, the absorption coefficients of a material with different degree of disorder, from crystalline to amorphous, are all equal. For Si, the SEW is approximately 3490 A, i. e. hw ~ 3.55 eV (in...

A phosphorus implanted p-Si layer with dose slightly higher than its critical value was studied by EER combined with stripping-etching technique. The concept of a certain optimal wavelength, named "Specially Effective Wavelength" (SEW), is introduced for the optical measurements of structurally disordered materials. At SEW, the absorption coefficients of a material with different degree of disorder, from crystalline to amorphous, are all equal. For Si, the SEW is approximately 3490 A, i. e. hw ~ 3.55 eV (in the E1, E2 + △/1 region), and the corresponding absorption coefficient is 106cm-1 independent of its degree of disorder. The depth profile of (△R/R)3.55ev is related to that of disorder degree, and the characteristic relations △R/R(D) were obtained for all of the three depth regions. The resulting curve for the implant-damaged region is similar to that reported by Anderson et al. for GaAs layers implanted with inert elements ions. By use of stripping, the observation of the disorder degree dependence of the 3.4 eV structure lineshapes has been realized in a wide range with only one sample. A comparison is made with the lineshape features of vacuum evaporated Ge films. Some conclusions have been drawn from these measurements about the mixed lattice interaction origin of the 3.4 eV spectral region of silion. It has been confirmed that EER is a powerful technique with extremely high sensitivity for the investigation of ion implanted semiconductor layers.

结合剥层技术,对略高于临界剂量的P~+注入p-Si层,进行了电解液电场调制反射(以下简称EER)光谱研究,对非均匀的结构无序材料的光学测量,提出采用“特效波长”的建议,硅的这一波长是E_1,E_1+△_1能区的349OA(hω≈3.55eV),c-Si和α-Si对3490A光波的吸收系数均等于10~6cm~(-1),将(△R/R)_3.55ev按深度x的分布同无序度的分布D(x)作了对比,并从中得到不同无序区内△R/R与D的特征关系,关于损伤区的△R/R(D),所得结果同已见报道的GaAs注入层一致,利用离子注入层的仅仅一个样品,通过剥层,实现了在宽广范围内无序度对光谱影响的观察,观察在E-1,E-1十△_1能区(3.4eV结构)进行,同Ge的真空蒸发膜的情况作了比较,并对此结构的点阵互作用根源作出一些初步的实验结论,本文证实EER是研究离子注入层的高灵敏度技术。

The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers. In a previous work, we have studied the electronic structure of a metalme-tal LUCS in the tight binding approximation. We present here the result of a similar study of a metal-semiconductor LUCS, with the hope that it may be helpful to more detailed further investigations of the ABB model of superconductivity.

Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。我们曾经在紧束缚近似下,用格林函数技术,研究了金属-金属LUCS的电子结构。本文是按相似的方法对于金属-半导体LUCS进行的计算和结果。所获得的电子结构可有助于详细地研究ABB模型的超导体。

An inverse proportionality between the specific contact resistance ρ_c of n-type GaAs and its carrier concentration ND has been shown by a lot of experimental facts. In this paper, a comment is made on the various viewpoints about this phenomenon in the literatures and their shortages are pointed out as well. According to the band structure of ohmic contact, a new model, assuming that ?_c consists of two parts (ρ_c_2 and ρ_C_2), is put forward. ρC_1 occurs between the contact metal and its underlying highly...

An inverse proportionality between the specific contact resistance ρ_c of n-type GaAs and its carrier concentration ND has been shown by a lot of experimental facts. In this paper, a comment is made on the various viewpoints about this phenomenon in the literatures and their shortages are pointed out as well. According to the band structure of ohmic contact, a new model, assuming that ?_c consists of two parts (ρ_c_2 and ρ_C_2), is put forward. ρC_1 occurs between the contact metal and its underlying highly doped semiconductor layer (NDc) after alloying. ρ_c_2 is brought about by a barrier appeared due to the concentration difference between the NDc and the active layer ND. If the alloying process is optimized and thus the NDc is very high, then ρC_1 is very small and ρC_2 gives the main contribution to ρc. In this case an inverse proportionality between ρc and N_Dcan be found, if N_D < Nc (Nc is the effective state density). When ND > Nc, ρC_2 can be neglected due to the disappearance of the barrier. In this case, ρc is determined by ρ_c_1, which should depend only on N_Dc. Based on the above description, a theoretical deduction was carried out and the result not only can explain the experimental data of n-type GaAs ohmic contact very well, but also the experimental facts of p-type Si ohmic contact presented in the literatures. We believe that this model can also be extended to the case of other III-V compound semiconductors, such as p-type GaAs and P-type InP etc.

n型GaAs欧姆接触的比接触电阻ρ_c与有源层浓度N_D有反比关系,这已为很多实验事实所证明。文献中对这一现象有各种解释。本文对文献中的各种解释模型进行了分析,指出不足之处。提出ρ_c应由两部分ρ_(c_1)和ρ_(c_2)组成。ρ_(c_1)是合金与其下在合金化后形成的高掺杂层间的比接触电阻。此外,在这高掺杂层与原来有源层间有载流子浓度差,因而形成一个势垒φ_2,它带入ρ_(c_2)。当合金化良好,高掺杂层浓度N_(Dc)很高,因而ρ_(c_1)很小。这时ρ_(c_2)是ρ_c的主要组成部分。只是在这种情况下,即当N_D小于有效态密度N_c时,ρ_c与N_D才有反比关系。如N_D>N_c,由于φ_2的消失而ρ_(c_2)可忽略,ρ_c由ρ_(c_1)决定。这时ρ_c将决定于N_(Dc),而与N_D无关。所得ρ_(c_1)与ρ_(c_2)的计算式不但能很好解释n型GaAs欧姆接触的实验结果,而且也解释了文献中p-Si的欧姆接触实验结果。认为所述模型也对p型GaAs,p型InP和其他Ⅲ-V族化合物等适用,并结合文献中的实验数据进行了讨论。

 
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