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typical devices
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     And the diversity applications of typical devices and systems in MEMS structures, sensors, actuators and integrated systems are introduced in this paper.
     从微构件、微传感器、微执行器和专用MEMS集成系统等4方面的典型器件和典型系统,介绍了微机电系统在当今社会各个领域的广泛应用.
短句来源
     Analyses the characteristic of MEMS and NEMS. After introducing the typical devices and systems of MEMS and NEMS,discusses some questions about MEMS and NEMS's developing and developing prospect of MEMS and NEMS.
     分析了微 /纳机电系统的发展特点 ,简要地介绍了典型的MEMS和NEMS器件及系统后 ,椭论了MEMS和NEMS发展中的几个问蹄以及它们的发展前景
短句来源
     For the problem of more than 200 connections from I/O to main processor,we can also use typical devices(8255,etc),which has low integration and bad stability as well.
     若使用传统的器件(例如8255)实现这两百多路I/O集中接入主处理器,集成度会很低,稳定性也不好。
短句来源
     Tiny optical device used in X-ray band is one of typical devices of MOEMS.
     用于X射线波段的微小光学器件是MOEMS典型器件之一。
短句来源
     The equivalent circuit and electrical matching were analyzed in combination of the practical measurements. The photoelectric performance and the mutuality were discussed in detail. The performances for the typical devices are as follows: resolution 50lp/mm,input sensitivity in white 6.77μW/cm 2, response time 200ms(on)/300ms(off),contrast in white 200∶1.
     系统地讨论了排列相畸变模式液晶光阀的结构、原理和制作,结合实际测试对其等效电路和电学匹配进行了分析,详细讨论了它的光电特性及相互关系.实测的液晶垂直排列方式工作的液晶光阀性能指标为:分辨率大于50lp/mm,白光输入灵敏度为6.77μW/cm2,响应时间为200ms/300ms,白光输出对比度为200∶1
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     Data are given for the typical YAG devices.
     对典型的YAG器件给出了具体的数值。
短句来源
     Typical devices from every category of reflection mode MOEMS are examined.
     简要介绍了反射式MOEMS的加工工艺;
短句来源
     METHODS: Typical E.
     方法:本实验选用E.
     Nanoelectronic Devices
     纳米电子器件
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     Nanoelectronic devices
     纳电子器件
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  typical devices
The problem of macroscopic quantum tunneling in SQUIDs is discussed, taking into account the resonant mode structure of typical devices.
      
Temperature controllers are typical devices in most office-buildings, but the intended users very seldom use them.
      
Typical devices to remove the offensive odors and particulate matter in the off-gases are wet scrubbers and incinerators.
      
The differences between the test device and typical devices for applications in thermal and process engineering are also identified.
      
The brightness of the devices comes to 3120 cd/m2(at a driving voltage of 25 V), the CIE coordinates of the typical devices is (0.308,0.347), and the coordinates is very close to the white equi-energy point.
      
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The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques. In this paper, monostable circuits described by the second, third and fourth order nonlinear differential equations are analyzed by using a graphical method proposed by one of the authors[3]. Switching properties under various operating conditions and with various external circuit parameters are studied. A method is proposed to present solution curves with specified time intervals in the...

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques. In this paper, monostable circuits described by the second, third and fourth order nonlinear differential equations are analyzed by using a graphical method proposed by one of the authors[3]. Switching properties under various operating conditions and with various external circuit parameters are studied. A method is proposed to present solution curves with specified time intervals in the phase-plane of a typical device and from these curves switching properties of the monostable operations can be calculated. By proper mathematical transformations, these curves also provide useful informations for practical circuit design in general.The switching properties of monostable circuits are measured. The experimental results are in good agreement with the calculated values.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。本文利用文献[3]提出的对非线性系统的图解法,分析了用二阶、三阶、四阶非线性微分方程描述的隧道二极管单稳线路。本文研究了运用条件和外线路参量对单稳特性的影响;提出了在相平面上对典型器件作出系列相轨迹图来定量研究隧道二极管单稳运用特性的方法,并将其推广,可供实际线路设计时定量估计之用。 我们观测了隧道二极管单稳线路的特性,其结果与计算结果满意地符合。

Starting from the fundamental physical model of the surface-gate SIT, the analysis is made for the operational mechanism of this device,the analytical solution isobtained along the central line of the channel.The distributions about the potentialbarrier is computed at different V_(GS) and V_(DS) with the typical device.The result iscompared with the numerical result which had been achieved with the same deviceby J. L.Morenza and D. Esteve in 1978, and it is found that both are consilient. The physical...

Starting from the fundamental physical model of the surface-gate SIT, the analysis is made for the operational mechanism of this device,the analytical solution isobtained along the central line of the channel.The distributions about the potentialbarrier is computed at different V_(GS) and V_(DS) with the typical device.The result iscompared with the numerical result which had been achieved with the same deviceby J. L.Morenza and D. Esteve in 1978, and it is found that both are consilient. The physical model about the existence of potential barrier in the surface-gateSIT is described and the difference in the forming of potential barrier between the sur-face-gate SIT and buried-gate SIT is explained.The conclusion is made about theexistence of potential barrier.

本文从表面栅静电感应晶体管(SIT)的基本物理模型出发,求出了沿沟道中心线的电势分布和沟道势垒高度的解析表达式.根据所得表达式具体计算了一个典型器件在不同栅源电压V_(GS)和漏源电压V_(DS)下的电势分布和势垒高度.其结果与1978年J.L.Morenza等人对同一器件用计算机数值分析所得的结果吻合较好. 本文给出了该种器件中势垒存在的物理模型,指出了表面栅与隐埋栅器件在势垒形成上的差别:表面栅器件中势垒的形成与源沟n~+n结有关;而隐埋栅器件势垒的形成与源沟n~+n结无关. 本文所得的解析表达式也表明,表面栅结构中势垒的出现需要沟道夹断一定的深度.这与1980年日本J.Ohmi用计算机数值分析所得结论是一致的. 本文所得的势垒高度的解析表达式可以作为进一步求解该种器件各电参数的解析表达式的基础.

This paper presents four methods for testing the pressure-viscosity behavior of lub-ricating oils abroad,Which include methods such as falling weight,capillary,ultrasonicand optical interference.The principle,typical device,advantages and experimental resultsof each method are introduced.The methods and experimental results are compared anddiscussed.

本文综述了国外润滑油压粘特性所采用的试验方法,其中包括落重法、毛细管法、超声波法和光干涉法。介绍了这些试验方法的原理、装置、优缺点及试验结果,并进行了对比和讨论。

 
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