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mis devices
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  mis器件
     CAPACITANCE-VOLTAGE CHARACTERISTICS OF Hg_(1-x)Cd_xTe MIS DEVICES
     Hg_(1-x)Cd_xTe MIS器件的C-V特性
短句来源
     CONDUCTANCE-VOLTAGE CHARACTERISTICS OF Hg_(1-x)Cd_xTe MIS DEVICES
     Hg_(1-x)Cd_xTe MIS器件G-V特性
短句来源
     The C-V characteristics of N-and P- type Hg_(1-x)Cd_xTe (x=0.2~0.56) MIS devices fabricated with double dielectric layers consisting of anodio oxide and ZnS are studied.
     测量了阳极氧化和ZnS双层介质结构的Hg_(1-x)Cd_xTe MIS器件的C-V特性。
短句来源
     This techno- logy will be expected to improve the performance of MIS FET′s,and fabricate some GaAs-based MIS devices with high performance and stability.
     这种技术可望改善 MIS 场效应晶体管的性能,制造出稳定的高性能的 GaAs基质 MIS 器件。
短句来源
     The fabrication of HgCdTe MIS devices and the basic principle and steps for calculating and analyzing the interface electrical characteristics through their C-V curves are presented. The formulas for calculating the distribution of the impurity concentration in substrates with depth are deduced by using the electrical characteristics in the depletion region of high frequency C-V curves of the MIS devices.
     介绍了HgCdTe MIS器件的制备及由其C-V特性计算、分析界面电学特性的基本原理和步骤.利用MIS器件高频C-V曲线耗尽区的电学特性推导了衬底杂质浓度随深度分布的计算公式。
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  “mis devices”译为未确定词的双语例句
     The Preparation and Structure of L-B Films of Mn(Ⅲ)TPP(COOH) and the Ⅰ-Ⅴ Characterization for MIM MIS Devices Fabricated from the L-B Films
     长链对称取代卟啉锰L-B膜的结构及其MIM、MIS结构的Ⅰ-Ⅴ特性研究
短句来源
     The mechanism of minority-carrier dark current of Hg_(1-x)Cd_xTe MIS devices is analyaed based on the conductance-voltage characteristics.
     基于G-V关系分析了Hg_(1-x)Cd_xTeMIS器件的少数载流子暗电流机制.
短句来源
     For N-type Hg_(1-x)Cd_xTe MIS devices, it is revealed that the dominating dark current mechanism for T<130K is the indirect tunneling current via band-gap states and that for T>130K is the generation-ecombination current.
     对于N型Hg_(1-x)Cd_xTeMIS器件,当温度T<130K时,占优势的暗电流机制是通过禁带态的间接隧道电流;
短句来源
     Furthermore, this model can also be applieci p MNOS structure or MIS devices with other traps.
     上述二步隧穿模型同样适用于MNOS结构或含有陷阶的其他介质MIS结构的电导过程。
短句来源
  相似匹配句对
     The Standardization of MIS
     MIS的标准化规范问题
短句来源
     Numerical Simulation of Current-Voltage Characteristics of MIS Tunnel Devices
     MIS隧道器件电流-电压特性的数值模拟
短句来源
     On MIS Development
     MIS开发方法探讨
短句来源
     Nanoelectronic Devices
     纳米电子器件
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     Nanoelectronic devices
     纳电子器件
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  mis devices
The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices.
      
Al2O3/Si3N4 bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si3N4-based MIS devices under reverse gate bias, and leakage as low as 1×10-11 A/mm at -15 V has been achieved in Al2O3/Si3N4-based MIS devices.
      
In this paper, we report the effects of bromine etch and HNO3 post-etch treatment on the C-V characteristics of MIS devices with ZnS on LPE-grown HgCdTe wafers.
      
The present article reports the first application of pseudomorphic Si/ Al0.3Ga0.7As interlayers to ideal GaAs MIS devices and demonstrates a favorable interface stability.
      
Aluminum nitride is a promising insulator for the fabrication of 6H-silicon carbide (6H-SiC) metal-insulator-semiconductor (MIS) devices for high temperature and high power applications.
      
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The C-V characteristics of N-and P- type Hg_(1-x)Cd_xTe (x=0.2~0.56) MIS devices fabricated with double dielectric layers consisting of anodio oxide and ZnS are studied. The nonparabolicity and degeneracy of Hg_(1-x)Cd_xTe conduction band are taken into account in the theoretical treatment based on Kane model. In calculating high frequency capacitance, the redistribution of minority carriers in the inversion layer is also considered. The C-V measurements are carried out within the frequency range of 20Hz~10MHz...

The C-V characteristics of N-and P- type Hg_(1-x)Cd_xTe (x=0.2~0.56) MIS devices fabricated with double dielectric layers consisting of anodio oxide and ZnS are studied. The nonparabolicity and degeneracy of Hg_(1-x)Cd_xTe conduction band are taken into account in the theoretical treatment based on Kane model. In calculating high frequency capacitance, the redistribution of minority carriers in the inversion layer is also considered. The C-V measurements are carried out within the frequency range of 20Hz~10MHz and the temperature range of 26~200K. For Hg_(0.7)Cd_(0.3)Te MIS device, the results at 80K show that the fixed positive charge density is 8~10×10~(11)cm~(-2), slow interfaee trap density 4~10×10~(10)cm~(-2), and minimum fast surface state density 1.72×10~(11)cm~(-2)eV~(-1).

测量了阳极氧化和ZnS双层介质结构的Hg_(1-x)Cd_xTe MIS器件的C-V特性。基于Kane模型并考虑了碲镉汞导带非抛物性和载流子简并效应,进行了理论计算,高频情况下还考虑了少子在反型层中的再分布。对各种组份(x=0.2~0.56)的N型和P型Hg_(1-x)Cd_xTe MIS器件进行了变频(f=20~10MHz)和变温(T=26~200K)C-V测量。对于x=0.3的器件,测得其固定正电荷密度为8~10×10~(11)cm~(-2),80K下慢界面陷阱密度为4~10×10~(10)cm~(-2),最小界面态密度为1.7~2×10~(11)cm~(-2)·eV~(-1)。

A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2× 10(19)-7.2×10(20)cm- and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applieci p MNOS structure...

A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2× 10(19)-7.2×10(20)cm- and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applieci p MNOS structure or MIS devices with other traps.

本文回顾了半导体介质膜中几种主要导电机构。提出了陷阶辅助二步隧穿模型来描述深度氮氧化膜SiO_xN_y的电导特性,而浅度氮氧化膜的电导则可用增强Fowler-Nordheim隧穿来描述。根据模型计算的理论曲线和实验结果符合得很好,决定二步隧穿过程的主要参数φ_t和N_t在2.46—2.56eV和1.2×10~(19)—7.2×10~(20)cm~(-3)范围内。这些结果和前人实验结果相一致,并从俄歇分析结果得到满意解释。上述二步隧穿模型同样适用于MNOS结构或含有陷阶的其他介质MIS结构的电导过程。

The mechanism of minority-carrier dark current of Hg_(1-x)Cd_xTe MIS devices is analyaed based on the conductance-voltage characteristics. For N-type Hg_(1-x)Cd_xTe MIS devices, it is revealed that the dominating dark current mechanism for T<130K is the indirect tunneling current via band-gap states and that for T>130K is the generation-ecombination current. In low temperature region, the indirect tunneling current is lmited by electron thermal excitation from valence band to intermediate band-gap...

The mechanism of minority-carrier dark current of Hg_(1-x)Cd_xTe MIS devices is analyaed based on the conductance-voltage characteristics. For N-type Hg_(1-x)Cd_xTe MIS devices, it is revealed that the dominating dark current mechanism for T<130K is the indirect tunneling current via band-gap states and that for T>130K is the generation-ecombination current. In low temperature region, the indirect tunneling current is lmited by electron thermal excitation from valence band to intermediate band-gap states. From the temperature dependence of R_0A, it is derived that the band-gap state is located at about 50meV above the top of the valence band. The inversion layer quantization effect strongly modulates the value of dark current in P-type Hg_(1-x)Cd_xTe.

基于G-V关系分析了Hg_(1-x)Cd_xTeMIS器件的少数载流子暗电流机制.对于N型Hg_(1-x)Cd_xTeMIS器件,当温度T<130K时,占优势的暗电流机制是通过禁带态的间接隧道电流;而当T>130K时则是耗尽区的产生-复合电流.在低温区,从价带到禁带态的电子热激发限制了间接隧道电流,根据R_0A对温度的依赖关系推算出禁带态位置约在价带顶上面50meV处.在P型样品中,反型层量子化效应强烈地影响少子暗电流的大小.

 
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