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atom defects
相关语句
  原子缺陷
     Atom defects and interface states in ZnO varistor ceramics
     ZnO压敏陶瓷中的原子缺陷和界面电子态研究
短句来源
     N d is related to bulk atom defects and rests with ionized intrinsic and extrinsic shallow donors Zn ′ i,Zn ″ i, Al * Zn at room temperature. N s and E s are associated with the density and character of interface atom defects.
     Nd与体内原子缺陷有关 ,室温下主要取决于电离的浅能级本征和非本征施主Zn·i,Zn¨i和Al·Zn,Ns和Es与界面原子缺陷密度和性质有关 .
短句来源
  相似匹配句对
     Atom defects and interface states in ZnO varistor ceramics
     ZnO压敏陶瓷中的原子缺陷和界面电子态研究
短句来源
     defects in means;
     有明显的方法缺陷 ;
短句来源
     Some defects of G.
     对G.
短句来源
     Theoretic Calculations of the Quantum Number Defects for Rydberg Na Atom
     Rydberg态Na原子量子亏损的理论计算
短句来源
     Fuzzy Atom Lattice
     Fuzzy原子格
短句来源
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  atom defects
Quadrupole interaction signals are analysed in terms of near-neighbor Ni-vacancy and nextnear-neighbor Ni antisite atom defects.
      
Also Gd atoms attached at the open end of the tubes and single-carbon-atom defects on the tube walls became observable.
      


Solid state NMR with magic angle spmning (MAS) and cross polarization(CP) tech-niques, and IR spectroscopy have been used to investigate the structural Characterizations of thehighly siliceous ZSM-5(S-1) zeolites synthesized using various organic ammoniums or ammes astemplates and the Ti-ZSM-5 zeolites prepared by the solid reaction of ZSM-5 zeolites with titaniumtetrachloride vapor at 873K . It has been shown that the strneture of the ZSM-5 zeolite isstrongly governed by the variety of the templates used...

Solid state NMR with magic angle spmning (MAS) and cross polarization(CP) tech-niques, and IR spectroscopy have been used to investigate the structural Characterizations of thehighly siliceous ZSM-5(S-1) zeolites synthesized using various organic ammoniums or ammes astemplates and the Ti-ZSM-5 zeolites prepared by the solid reaction of ZSM-5 zeolites with titaniumtetrachloride vapor at 873K . It has been shown that the strneture of the ZSM-5 zeolite isstrongly governed by the variety of the templates used in the synthesis, and the zeolites templatedby TEABr and HDA present the orthorhombic symmetry, while those prepared using TPABr andTPAOH as templates exhibit only monoclmic symmetry . Furthermore, thedistribution of thestructural defects in the obtained zeolites was found to be also dependent on the templates used.These T-atom defect sites in the framework, defined as Si(OSi)3O-,are available for the insertionof Ti atoms in the subsequent reaction with titaniuintetrachloride vapor at elevated temperaturesand the concentration of defects was proved to be correlative to the amounts of Ti atoms beingderived into the framework of zeolite.

运用度角旋转(MAS)和交叉极化(CP)等核磁共振波谱和红外光谱技术,分别对采用不同模板剂制备的高硅ZSM-5分子筛和以此为母体,经气固同晶取代法得到Ti-ZSM-5分子筛的结构特性进行了研究.结果表明:在水热法合成高硅ZSM-5分子筛过程中,模板剂明显制约着所制得的分子筛的结构特性.通过选用合适的模板剂,可直接获得具有正交晶系结构的高硅ZSM-5分子筛.在随后的气固相同晶取代过程中,钛原子通过占据分子筛骨架中的缺陷位进入骨架,形成具有一定Ti/Si比例的钛硅分子筛(Ti-ZSM-5)。骨架结构中缺陷位的含量直接影响分子筛的载钛量。

The donor concentration N d in a depletion layer, the interface acceptor state density N s and the deepness of the interface energy level E s are important parameters influencing the electric properties of ZnO varistor ceramics. N d is related to bulk atom defects and rests with ionized intrinsic and extrinsic shallow donors Zn ′ i,Zn ″ i, Al * Zn at room temperature. N s and E s are associated with the density and character of interface atom defects. As intrinsic...

The donor concentration N d in a depletion layer, the interface acceptor state density N s and the deepness of the interface energy level E s are important parameters influencing the electric properties of ZnO varistor ceramics. N d is related to bulk atom defects and rests with ionized intrinsic and extrinsic shallow donors Zn ′ i,Zn ″ i, Al * Zn at room temperature. N s and E s are associated with the density and character of interface atom defects. As intrinsic interface defects are elementary factors to bring an interface acceptor state. Bi, Ba as segregated larger radius ions at grain boundary and O -, O 2- as chemisorbed oxygen are the key factors to increase the N s and E s. Mn, Co, Ni with transformable valence state as transition elements are important factors to increase further the state density; Sb is a considerable factor to increase the state density and stabilize the barrier due to making the BaSb 2O 6 phase.

分析指出耗尽层内施主浓度Nd、界面受主态密度Ns和界面能级深度Es是影响ZnO压敏陶瓷电性能的重要参数 .Nd与体内原子缺陷有关 ,室温下主要取决于电离的浅能级本征和非本征施主Zn·i,Zn¨i和Al·Zn,Ns和Es与界面原子缺陷密度和性质有关 .本征界面缺陷V′Zn和V″Zn对界面受主态形成起基本作用 ;偏析于晶界的大离子半径的Bi和Ba以及界面上的化学吸附氧O-和O2 -对提高Ns和Es起关键作用 ;易变价过渡元素Mn ,Co和Ni对进一步提高受主态密度起重要作用 ;Sb通过生偏锑酸钡相在稳定势垒方面起较大作用 ,对提高态密度也有一定帮助 .

 
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