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semiconductor processing
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  “semiconductor processing”译为未确定词的双语例句
     Transition to 300mm Wafer Drives Progress in Semiconductor Processing
     300mm硅圆片的转移推动了半导体生产技术的进步
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     The multi-layer driving membrane structure for the Si /SiO2/Ti /Pt /PZT/Cr/Au solved the questions of adhesion, anti-fatigue in the preparation of thin film, and the BHF/HNO solution realized PZT thin film etching technology in semiconductor processing steps.
     采用Si/SiO2/Ti/Pt/PZT/Cr/Au多层驱动膜结构,解决了PZT薄膜制备中存在附着力、抗疲劳等问题,利用BHF/HNO3溶液实现了PZT薄膜刻蚀技术的半导体工艺化.
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     In this paper the history of the development using plasma technology in semiconductor processing is reviewed briefly.
     本文简要回顾等离子体技术应用于半导体工艺的发展史。
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     The InSb magneto resistor using InSb crystal is fabricated by semiconductor processing. The characteristics of the sensor has been measured.
     分析了旋转传感器的核心敏感元件InSb磁敏电阻及传感器的电路结构、工作原理。
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  相似匹配句对
     processing and N.
     预处理和N.
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     Nd:YAG lasers in semiconductor processing
     Nd:YAG激光器用于半导体加工
短句来源
     Excimer Lasers Applications to Semiconductor Supersubtle Processing
     准分子激光器在半导体超精细加工中的应用
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     Noncrystalline Semiconductor
     非晶态半导体
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     Semiconductor Arrester
     半导体放电管
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  semiconductor processing
The concept and design of a new chemical vapor deposition (CVD) reactor is presented for both epitaxial and nonepitaxial film deposition in semiconductor processing.
      
It has been observed in semiconductor processing that the etch rates for materials subjected to an electron-cyclotron resonance (ECR) plasma change with the total sample area.
      
Polymers such as polyimides and photoresists, commonly used in semiconductor processing, have been investigated as high resolution masks for ion implantation.
      
Megasonic cleaning: A new cleaning and drying system for use in semiconductor processing
      
We believe that an Ar excimer lamp has a high potential for surface cleaning in semiconductor processing.
      
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In this paper the history of the development using plasma technology in semiconductor processing is reviewed briefly. The principle of etching polysilicon, Si3N4 and resist by using plasma is described and the principle of growing film of Si3N4 by using plasma CVD method is presented in view of discharge chemistry. It turned out that plasma technology should be one of semiconductor processes.

本文简要回顾等离子体技术应用于半导体工艺的发展史。从放电化学的角度阐明等离子体对多晶硅、Si_3N_4和光致抗蚀剂的腐蚀原理及等离子体CVD法生长Si_3N_4的原理。指出等离子体技术将是半导体加工必不可少的工艺之一。

The current Stability and the life time of Liquid Meal lon(LMI)sources are two important parameters for their applications not only in surface analysis instruments but also in SemiConductor processing equipments. In order to get high stability and long life time of LMI sources which_1 can offer a variety of metal ion species, we have developed a capillary-type LMI source with a porous tungsten coatainer made by the same techmique as taht of making the tungsten plug in the disperse cathodes. The porous...

The current Stability and the life time of Liquid Meal lon(LMI)sources are two important parameters for their applications not only in surface analysis instruments but also in SemiConductor processing equipments. In order to get high stability and long life time of LMI sources which_1 can offer a variety of metal ion species, we have developed a capillary-type LMI source with a porous tungsten coatainer made by the same techmique as taht of making the tungsten plug in the disperse cathodes. The porous tungsten was mechanically fabricated to form proper shape and the W needle was spot-welded. During the operation the intergrated emitter can be heated up to 1000℃ to 1300℃ By a Sintered type heater. It has been found out that the emission stability of ±1.5×10~(10) was obtained routinely within one hour up to three hours at a total current of 10 micro-A from a Ga source. And for Au source with the same configuration the emission fluctuation is onty±1.4% over an hour at the ion current of 5 micro-A without any current eedback or regulation system. An axial angular intensity of 15 micro-A/Sr, at 10 micro A emission current was obtained with both Au and Ga sources. Accordin to the measurement and calculat ion about 200mg of Ga and 150mg Au were stored in the reservior respectively. This means the life time would be very long and, in fact, an operating time of more than 500 hours has been tested by continuously drawing the ion emission. It is considered that the high stability is due to the fine wetting quality on both Wneedle and the interior wall of the tungsten reservior.The sources are now being put into an ion micro-probe instrument to test their performance.

本文介绍一种用多孔W筒作料池的同轴针型液态金属Ga和Au离子源。料池内Ga和Au的贮量分别为200mg和150mg,具有低蒸发、长寿命的优点。由于液态金属与W针尖及多孔W料池内壁都能良好浸润,因而流阻低,电流稳定性好。在总离子发射电流10μA时Ga的离子流稳定度和5μA时Au源的稳定度都可达到±1.5%/h,连续寿命试验分别超过500h和150h,故已具有实用价值。本文还讨论了影响稳定性的诸因素。

In order to provide more active nitrogen for GaN film growth at low temperature, the electron energy distribution of a nitrogen ECR plasma has been investigated by using a Langmuir probe and the second differential theory on cavity coupled ECR plasma applicator for semiconductor processing. It was found that with more energetic electrons in presence, the distributions were all non Maxwellians in which the high energy fraction would increase with decreasing of the pressure and increasing of the absorbed...

In order to provide more active nitrogen for GaN film growth at low temperature, the electron energy distribution of a nitrogen ECR plasma has been investigated by using a Langmuir probe and the second differential theory on cavity coupled ECR plasma applicator for semiconductor processing. It was found that with more energetic electrons in presence, the distributions were all non Maxwellians in which the high energy fraction would increase with decreasing of the pressure and increasing of the absorbed microwave power.

在预电离、空芯变压器功率续流、真空室放电清洗、碳化和蒸钛条件下,得到反场箍缩(RFP)和超低安全因子(ULQ)的实验结果。等离子体性质改善,等离子体电流出现平顶,其幅值增加。杂质被有效控制,等离子体温度增高。

 
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