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cb junction
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  深结
     Measurement and analysis results show that the N+PNtype device using highresistance silicon substrate and low CB junction exhibits better purpleblue sensitivity. 
     通过测试与分析,得出采用单晶衬底材料、深结较浅工艺的N+PN型器件蓝紫响应度较好的结论。
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  “cb junction”译为未确定词的双语例句
     In order to get the most sensitive ports and parameters and related regularity of microwave low-noise transistor to electromagnetic pulse and the damage/failure mode and mechanism of microelectronic devices,firstly,the Human Body Model(HBM) is adopted in the related experiments of ESD sensibility of two kinds of silicon triode(3DG218,3358). It finds that the sensitive port to ESD is CB junction and the sensitive parameter is V_(BRCEO) when the device damaged;
     为了得到微波低噪声晶体管电磁脉冲的最灵敏端对和最敏感参数以及相关规律和器件的损伤/失效机理和模式,首先采用静电放电人体模型(HBM),针对两类硅晶体三极管(3DG218、3358)进行了静电放电敏感性相关实验,得到该类晶体管的ESD敏感端对是CB结;
短句来源
     The paper contrasted CB junction reverse leak currents I_(cbo) and electronic noise spectrums S_(vcb)(f) of color TV high frequency video transistors(2688B, 2688S, 2688) produced by three kinds of techniques. It's discussed that interface state and surface movable charge cause surface leak current, which make devices (produce) electronic noise and affect other parameters such as reverse breakdown voltage and small current (amplifying) coefficient.
     通过对比2688B,2688S,26883种工艺技术生产的彩色电视机高频视放晶体管的CB和电噪声谱密度S(f),论述了界面态和表面可动电荷能够引起晶体管表结反向漏电流Ivcbcbo面漏电流,从而使器件产生电噪声,并间接影响到反向击穿电压、小电流放大系数等参数.
短句来源
     Two different batches of 3358 transistor,which produced by a famous foreign company,are adopted in the experiment. The voltages of inversing injection into CB and EB junction are compared in order to find which is more sensitive,and finds that the CB junction is the most sensitive port to EMP. The conclusion is different with what has been confirmed in previous research.
     又采用方波注入法对两晶体管进行实验比较了从CB结反向注入与从EB结反向注入的损伤电压值,发现该类器件的EMP最敏感端对是CB结而非以往人们认为的EB结。
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  相似匹配句对
     CB 50;
     炭黑50;
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     Junction is a composite.
     Junction是一个意义的合成,只表达一个意义;
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     2.map junction.
     2 图幅接边 ;
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     CB-TYPE FILLING PUMP
     CB型充填泵
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Development on purpleblue sensitivity of Si color sensor with double PN junction is tested through different choices of substrate materials, technic conditions and structures, on the base of which a device with fine sensitivity has been fabricated. Measurement and analysis results show that the N+PNtype device using highresistance silicon substrate and low CB junction exhibits better purpleblue sensitivity.

 尝试选择不同的衬底材料、不同的工艺条件,以及合理的结构,来改善硅双结色敏器件的蓝紫光响应,并在此基础上制作了蓝紫响应较好的器件。通过测试与分析,得出采用单晶衬底材料、深结较浅工艺的N+PN型器件蓝紫响应度较好的结论。

n--type silicon epitaxial layers were grown on arsenic-doped n+-type silicon substrate by ultra-high vacuum chemical vapor deposition(UHV/CVD).The transition region thicknesses of the Si layers grown under different PH 3 flux and different growth temperatures were investigated by spread-resistance probe.Results show that the growth temperature has remarkable influence on the arsenic diffusion from the Si substrate.The thickness of the transition region was 0.16μm grown at 700℃ and 0.06μm at 500℃,respectively.Moreover,the...

n--type silicon epitaxial layers were grown on arsenic-doped n+-type silicon substrate by ultra-high vacuum chemical vapor deposition(UHV/CVD).The transition region thicknesses of the Si layers grown under different PH 3 flux and different growth temperatures were investigated by spread-resistance probe.Results show that the growth temperature has remarkable influence on the arsenic diffusion from the Si substrate.The thickness of the transition region was 0.16μm grown at 700℃ and 0.06μm at 500℃,respectively.Moreover,the dopant profiles were very abrupt.X-ray diffraction investigation of the Si layer grown at 700℃ shows the quality of Si layer is very high.Silicon-germanium hetero-junction bipolar transistor (SiGe HBT) was fabricated by a revised double-mesa polysilicon-emitter process.Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard,and the leakage current is only 0.3μA at V CB=14.0V.The SiGe HBT device also had good output performance with current gain β=60 at V CE=5V and I C=3mA.

利用超高真空化学气相淀积 (UHV/ CVD)设备 ,在掺 As n+ 型 Si衬底上生长了掺 P n- 型 Si外延层 .用扩展电阻法分析了在不同的生长温度和 PH3气体流量下生长的 Si外延层的过渡区厚度 .结果表明 ,生长温度对 n+ - Si衬底的 As外扩有明显影响 ,在 70 0℃下生长的 Si外延层的过渡区厚度为 0 .16 μm,而在 5 0 0℃下仅为 0 .0 6 μm,且杂质分布非常陡峭 .X射线双晶衍射分析表明在 70 0℃下生长的 Si外延层的质量很高 .制作的锗硅异质结晶体管(Si Ge HBT)的击穿特性很硬 ,击穿电压为 14 .5 V,在 VCB=14 .0 V下的漏电流仅为 0 .3μA;输出特性很好 ,在 VCE=5 V,IC=3m A时的放大倍数为 6 0

The paper contrasted CB junction reverse leak currents I_(cbo) and electronic noise spectrums S_(vcb)(f) of color TV high frequency video transistors(2688B, 2688S, 2688) produced by three kinds of techniques. It's discussed that interface state and surface movable charge cause surface leak current, which make devices (produce) electronic noise and affect other parameters such as reverse breakdown voltage and small current (amplifying) coefficient. The experiment showed that surface leak current can be...

The paper contrasted CB junction reverse leak currents I_(cbo) and electronic noise spectrums S_(vcb)(f) of color TV high frequency video transistors(2688B, 2688S, 2688) produced by three kinds of techniques. It's discussed that interface state and surface movable charge cause surface leak current, which make devices (produce) electronic noise and affect other parameters such as reverse breakdown voltage and small current (amplifying) coefficient. The experiment showed that surface leak current can be controlled, transistor electronic noise can be lowered and the reliability, stability and life can be enhanced by adopting surface passivation (technique).

通过对比2688B,2688S,26883种工艺技术生产的彩色电视机高频视放晶体管的CB和电噪声谱密度S(f),论述了界面态和表面可动电荷能够引起晶体管表结反向漏电流Ivcbcbo面漏电流,从而使器件产生电噪声,并间接影响到反向击穿电压、小电流放大系数等参数.实验表明,采用合适的表面钝化技术,可有效控制晶体管的表面漏电流,降低晶体管的电噪声,使器件的可靠性、稳定性及其使用寿命得到提高.

 
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