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metal semiconductor metal
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  金属-半导体-金属
     The structure of the detector is made of metal semiconductor metal. Major geometric dimension of these detector are:the length of the strip is 17mm,and the width of them are of 20,50,100,200,300μm,respectively.
     该探测器结构采用金属 -半导体 -金属结构 ,其主要几何尺寸是 :微条长度为 17mm ,宽度分别为 2 0、5 0、10 0、2 0 0、30 0μm .
短句来源
     The 1 D DC circuit level model of a metal semiconductor metal photodetector is built and presented,whose photocurrents are analysized by using the steady state continuity equations.
     在稳态条件下金属 -半导体 -金属 (MSM)光探测器的光电流一维模型可以通过求解电流连续方程和传输方程来建立并求解 .
短句来源
     By using transmission line matrix method, the simulation and analysis for frequency response of interdigital capacitors in metal semiconductor metal photodetector is described.
     介绍了利用传输线矩阵方法模拟和分析金属 -半导体 -金属光电探测器指栅电容的频率响应。
短句来源
  “metal semiconductor metal”译为未确定词的双语例句
     WT5”BZ]:An comprehensive equivalent circuit model of the InGaAs (metal semiconductor metal) (MSM) photodetector has been built and is presented in this paper.
     本文详细介绍了一套完整的 In Ga As MSM光探测器的等效电路模型。
短句来源
     We have investigated the transport properties of a metal semiconductor metal structure containing multi-layers of InAs quantum dots from 77 K to room temperature. Three distinct phenomena are observed in the current voltage( I V ) curves:the hysteresis loops, current jumps and voltage offsets.
     研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性 ,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象 .
短句来源
     The circuit design and fabricating process of long wavelength monolithically integrated photoreceiver using metal semiconductor metal(MSM) InGaAs photodetector and InAlAs/InGaAs high electronic mobility transistor(HEMT) are presented. The compatibility of the process is discussed. As a result, a prototype of long wavelength monolithically integrated photoreceiver is demonstrated under a transmitting rate of 2.5 Gb/s.
     介绍了利用InGaAs长波长金属 半导体 金属 (MSM )光探测器与InAlAs/InGaAs高电子迁移率晶体管 (HEMT)集成来实现长波长单片集成光接收机的材料和电路设计、关键工艺途径等 ,解决了工艺兼容性问题 ,实现了 2 .5Gb/s传输速率下功能正确的单片集成长波长光接收机样品
短句来源
  相似匹配句对
     PREPARATION OF METAL AND SEMICONDUCTOR NANOPARTICLES FILM
     金属和半导体纳米微粒薄膜的制备
短句来源
     SYNTHESIS OF METAL SULFIDE SEMICONDUCTOR NANOPARTICLES
     半导体硫化物纳米微粒的制备
短句来源
     TIMES OF THE METAL
     金属时代
短句来源
     Metal Colouring
     金属着色
短句来源
     Semiconductor Photodetector
     半导体光电探测器
短句来源
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  metal semiconductor metal
An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics.
      
Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response
      
Template electrodeposition provides a route to photoconductive, free-standing metal-semiconductor-metal nanowires.
      
Four Sn electrodes run the entire length of the fiber in intimate contact with the glass, forming a metal-semiconductor-metal device structure.
      


GaAs interdigital Metal-Semiconductor-Metal photo - detectors have been fabricated on MBE grown wafer and ion implanted wafer, their characteristics have been compared. Results show that the IMSM - PD fabricated on MBE wafer have better characteristics, with its dark current less than InA at 5V bias. The IMSM-PD have been monolithically integrated with MESFET amplifier as photoreceivers.

采用S.I.GaAs衬底上MBE生长的两层结构外延材料制作了IMSM-PD并与采用离子注入材料制作的IMSM-PD的特性进行了比较,结果表明采用MBE材料的器件特性较优,在5V偏置电压下暗电流小于1nA。已将IMSM-PD与MESFET放大电路进行了单片集成构成光接收器。

Poisson's equation, current-continuity equation and electric charge trapping rate equation involving recombination terms are solved numerically by means of finite-ele-ment method in order to explain the behaviour of photogenerated carriers and the distribution of electric fields in metal-semiconductor-metal photodetectors(MSM-PD). Current-voltage characteristics and space-charge distributions in an InGaAs MSM photodetector are obtained numerically. The results explain the experimental observed...

Poisson's equation, current-continuity equation and electric charge trapping rate equation involving recombination terms are solved numerically by means of finite-ele-ment method in order to explain the behaviour of photogenerated carriers and the distribution of electric fields in metal-semiconductor-metal photodetectors(MSM-PD). Current-voltage characteristics and space-charge distributions in an InGaAs MSM photodetector are obtained numerically. The results explain the experimental observed phenomenon and demonstrate that the current contributed by electrons is saturated earlier than the hole current.

为了解释在InGaAs金属-半导体-金属光电探测器(MSM—PD)内光产生载流子的行为及器件内电场分布,本文用有限元法数值求解了含复合项的二维泊松方程、电流连续方程及电荷俘获速率方程。得到了InGaAs MSM光电探测器的电流—电压特性及器件内电场和载流子分布。模拟结果解释了实验观察到的雪崩击穿现象,并表明电子电流比空穴电流提前饱和。

Using the method of computer-aided analysis,the transist time as a function of the applied voltage and other parameters in metal-semiconductor- metal photodetectors(MSM-PD) is calcalated.It is shown that there exits a minimun transist time in MSM-PD as a result of nonlinear relationship between electron velocity and the electric field in GaAs.It is one of the best values ob- tained for MSM-PD whose electrode space is 3.0μm with the doping concentra- tion of 1×10~(14)cm~(-3)and the best working...

Using the method of computer-aided analysis,the transist time as a function of the applied voltage and other parameters in metal-semiconductor- metal photodetectors(MSM-PD) is calcalated.It is shown that there exits a minimun transist time in MSM-PD as a result of nonlinear relationship between electron velocity and the electric field in GaAs.It is one of the best values ob- tained for MSM-PD whose electrode space is 3.0μm with the doping concentra- tion of 1×10~(14)cm~(-3)and the best working point of 2V_(FB).The results obtained are encouraging and can be used for designing GaAs MSM-PD with high speed re- sponse and modelling its response.

根据 GaAs 材料的电子漂移速度与电场的非线性关系,研究了 GaAs MsM光电探测器电极间电子渡越时间与掺杂浓度 N_D、栅宽 L_g 和工作电压 V 的关系,结果表明,MSM-PD 电极间电子渡越时间存在极小值。对于电极间距离为3.0μm的 MSM-PD,掺杂浓度为1×10~(14)cm~(-3)的MSM-PD。工作电压为2倍平带电压时,电子渡越时间处于极小值。研究结果为设计高速响应 GaAs MSM 光电探测器及建立器件光电响应模型提供了依据。

 
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