助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   junction deviationand 的翻译结果: 查询用时:0.006秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

junction deviationand
相关语句
  结偏位
     It is con-sidered that Zn vapor contamination during the epitaxial growth and Zn fast diffusionof Zn doped InGaAsP,InP crystals is the dominant cause for PN junction deviationand that high concentration of donor or acceptor dopant will result in tunneling-typePN junction.
     认为用 Zn作P型掺杂剂的 InGaAsP/InP DH 激光器中,由于Zn在InGaAsP和InP晶体中的快扩散及外延生长期间Zn蒸气沾污是PN结偏位的主要原因. 施主和受主掺杂的高浓度会产生隧道型 PN 结.
短句来源
  相似匹配句对
     Junction is a composite.
     Junction是一个意义的合成,只表达一个意义;
短句来源
     THE C—V CHARACTERISTIC OF THE HYPERABRUPT P—n JUNCTION
     超突变P—n结的容——压特性
短句来源
     The detectionlimit for aniline was found to be 0.02 mg/l, the relative standard deviationand recovery rate were 0.63%~1.97%and 95.7%~102%, respectively.
     本方法可以测定浓度为0.02~40mg/l的苯胺水样,方法的回收率为95.9%~102%,相对标准偏差为0.63%~1.97%。
短句来源
     3.To overcome the shortcoming of general PID controller usedin adjustment set, a adaptive fuzzy control method in whichPID parameters parameters change from temperature deviationand deviation rat is proposed.
     3.针对常规PID控制器在火电厂调峰机组中存在的问题,提出了一种基于偏差和偏差变化率的动态改变PID参数的自适应模糊控制方法。
短句来源
     The results indicated that the standard deviationand recoveries were 0.12 and 98.82~101.20%for methyl-parathion,0.07 and 99.23~100.81%for endosulfan,0.02and 99.91~100.05%for methomyl,respectively.
     本方法的标准偏差和回收率分别为0.12和98.82~101.20%(甲基对硫磷),0.07和99.23~100.08%(硫丹),以及0.02和99.91~100.05%(灭多威)。
短句来源
查询“junction deviationand”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


The doping effects on the position and properties of PN junction in 1.3 μmInGaAsP/InP laser by means of SEM and V-I characteristics are studied.It is con-sidered that Zn vapor contamination during the epitaxial growth and Zn fast diffusionof Zn doped InGaAsP,InP crystals is the dominant cause for PN junction deviationand that high concentration of donor or acceptor dopant will result in tunneling-typePN junction.Therefore,in the fabrication technology of lasers,control on Zn contami-nation and dopant...

The doping effects on the position and properties of PN junction in 1.3 μmInGaAsP/InP laser by means of SEM and V-I characteristics are studied.It is con-sidered that Zn vapor contamination during the epitaxial growth and Zn fast diffusionof Zn doped InGaAsP,InP crystals is the dominant cause for PN junction deviationand that high concentration of donor or acceptor dopant will result in tunneling-typePN junction.Therefore,in the fabrication technology of lasers,control on Zn contami-nation and dopant concentration is of extreme importance.

本文说明用 SEM和V-I特性法研究 1.3μm InGaAsP/InP DH激光器中掺杂对 PN结位置及 PN结性质的影响.认为用 Zn作P型掺杂剂的 InGaAsP/InP DH 激光器中,由于Zn在InGaAsP和InP晶体中的快扩散及外延生长期间Zn蒸气沾污是PN结偏位的主要原因.施主和受主掺杂的高浓度会产生隧道型 PN 结. 因此在研制激光器的工艺中,控制Zn的沾污及掺杂剂的浓度是非常重要的.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关junction deviationand的内容
在知识搜索中查有关junction deviationand的内容
在数字搜索中查有关junction deviationand的内容
在概念知识元中查有关junction deviationand的内容
在学术趋势中查有关junction deviationand的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社