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voltage reduce
相关语句
  电压减
     Reactive power optimization and reactive power compensation in electric power systems are the efficacious means to elevate operation voltage, reduce power loss, and increase the stability level.
     电力系统的无功优化和无功补偿是提高系统运行电压 ,减小网损 ,提高系统稳定水平的有效手段。
短句来源
  “voltage reduce”译为未确定词的双语例句
     Voltage control and reactive power optimization are effective means to increase rate of qualified voltage, reduce grid losses, and improve the system stability.
     电网的电压控制和无功优化是提高电压合格率,降低网损,提高系统稳定性的有效手段。
短句来源
     Adopting activated means with variational current and increasing current step by step can improve capacity, heighten discharge plateau voltage, reduce internal resistance and reduce self-discharge rate.
     采用变电流且逐步适当增大电流的方法化成可以提高电池容量,增高放电平台,减少内阻及降低自放电率。
短句来源
     When the reactive power is sufficient, Reactive power optimization can enhance the good ratio of voltage, Reduce active power loss , So ensuring the security and economy.
     无功优化在系统无功充足的时候可以提高电压合格率、降低网损,达到安全经济的目的;
短句来源
     Reactive power compensation can save power, stabilize voltage, reduce waste of transition electricity, and reduce capacity of power devices.
     无功补偿可以为用户节约用电、稳定电压、降低输电损耗和减小供电设备的容量。
短句来源
     This paper has studied the structure of the one-sixth turn axial magnetic field of the cup vacuum interrupter with iron core and distribution of the axial magnetic field. The axial magnetic field reduces loss of radial energy of arc post plasma, and makes the arc voltage reduce.
     本文着重研究了带铁芯的1/6匝杯状纵磁真空灭弧室的结构以及纵向磁场的分布,纵向磁场的引入降低了弧柱等离子体径向能量损失,使电弧电压降低。
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  相似匹配句对
     reduce F, m and f.
     降低 m,降低 f。
短句来源
     How to Reduce Low Voltage Circuit's Loss
     降低低压电网线路损耗的几项措施
短句来源
     In the end, the method to reduce the ripple of output voltage is discussed.
     文章最后对减少输出电压纹波的方法进行了探讨。
短句来源
     of rated voltage.
     额定电压下,出口发生三相短路时,不会造成损坏。
短句来源
     Measurement of Voltage
     电压的测量
短句来源
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  voltage reduce
Both the charge-discharge efficiency and the charge-discharge voltage reduce.
      
Increasing capacitor and dc voltage reduce the open loop gain and increase the stability.
      


This paper investigates by means of LPY-4B induction type electrometer the (?)fluences of relative humidity, impurities and the molecules orientation of polyester fibre on the static voltage of fibre and the half decay period of charges on the fibre. There is a maximum voltage value at 45~60% relative humidity for silk, wool and synthetic fibres and the half decay period of charges quickly shortens when relative humidity increases. The voltage reduces and the half decay period shortens greatly...

This paper investigates by means of LPY-4B induction type electrometer the (?)fluences of relative humidity, impurities and the molecules orientation of polyester fibre on the static voltage of fibre and the half decay period of charges on the fibre. There is a maximum voltage value at 45~60% relative humidity for silk, wool and synthetic fibres and the half decay period of charges quickly shortens when relative humidity increases. The voltage reduces and the half decay period shortens greatly as impurities are added. The voltage rises as the molecule orientation of polyester fibre is enhanced in experimental range.

本文用LFY-4B型感应式静电仪测定了相对湿度、非纤维附着物以及涤纶纤维分子取向度对纤维静电压及电荷半衰期的影响,发现相对湿度在45~60%范围内,合成纤维、蚕丝、羊毛的静电压有最大值,各种纤维的半衰期随相对湿度增高迅速减短。当相对湿度达60%时,大多数纤维的半衰期已相当短,加上适当的非纤维附着物,可明显地降低静电压,缩短半衰期.在测定范围内,随着涤纶纤维取向度的提高,静电压增高.

This paper presents the results of the experimental studies on the flashover characteristics of insulator strings under dry and clean conditions applied with composite voltages. The results show the pre-existing DC voltage reduces (or increases) the lightning flashover voltage with an amount which just equals to the value of applied DC voltage no matter where the lightning impules is applied on the tower or the conductor. This fact should be considered in the insulation design of HVDC...

This paper presents the results of the experimental studies on the flashover characteristics of insulator strings under dry and clean conditions applied with composite voltages. The results show the pre-existing DC voltage reduces (or increases) the lightning flashover voltage with an amount which just equals to the value of applied DC voltage no matter where the lightning impules is applied on the tower or the conductor. This fact should be considered in the insulation design of HVDC transmission lines.

本文为绝缘子串在干燥和清洁条件下合成电压闪络特性的实验研究结果。从实验结果表示:预加的直流电压使绝缘子串的雷电闪络电压降低(或增加),不论雷电冲击是施加于铁塔上还是导线上,其值都等于所加的直流电压。这一事实在HVDC输电线路的绝缘设计中必须考虑.

The deep level in both Si/SiO2 interface and its neighbourhood and Si/SiO2 interface states have been studied systematically with Deep Level Transient Spectroscopy (DLTS). Experimental results show that a dominant deep level, H (0.494), exits in both Si/SiO2 interface and its neighborhood in MOS structure formed by thermal oxidation. The deep level possesses some interesting properties, for example, its DLTS peak height depends strongly on temperature, and when the gate voltage reduces the interval between....

The deep level in both Si/SiO2 interface and its neighbourhood and Si/SiO2 interface states have been studied systematically with Deep Level Transient Spectroscopy (DLTS). Experimental results show that a dominant deep level, H (0.494), exits in both Si/SiO2 interface and its neighborhood in MOS structure formed by thermal oxidation. The deep level possesses some interesting properties, for example, its DLTS peak height depends strongly on temperature, and when the gate voltage reduces the interval between. Fermi-level and Si valence band to a value less than that between the deep level and Si valence band, its sharp DLTS peak is still observable. The hole capture cross section of the interface states at Si/SiO2 interface has been found to depend on temperature, measured with a new method[15]. The energy distribution of the interface states measured with DLTS contradicts to the distribution obtained by quasistatic C-V technique. A new physical model of Si/SiO2 interface was proposed, with this model the above stated experimental results can be successfully expounded.

用深能级瞬态谱(DLTS)技术系统研究了Si/SiO_2界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO_2界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO_2界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测量的界面态能量分布与准静态C-V测量的结果完全不一致。本文提出的Si/SiO_2界面物理模型能合理地解释上述问题。

 
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