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antireflective coatings
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  增透膜的
     Preparation of Antireflective Coatings by PEG Modified SiO_2 Sols
     PEG分子量和温度对SiO_2溶胶及光学增透膜的影响
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     Study on the SiO_2 antireflective coatings prepared from sol-gel process
     Sol-gel制备SiO_2增透膜的研究
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     Study on the SiO_2 Antireflective Coatings Prepared from Sol-Gel Process
     溶胶—凝胶法制备SiO_2增透膜的研究
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     Practical design of double-layer antireflective coatings for high-index substrates
     高折射率基底上双层增透膜的实用化设计方法
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     Study on the Strengthened Antireflective Coatings Prepared from Sol Gel Process
     溶胶-凝胶法制备高强度二氧化硅增透膜的研究
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  “antireflective coatings”译为未确定词的双语例句
     Sol-gel derived SiO_2 antireflective coatings
     溶胶-凝胶法制备SiO_2增透膜
     Through computing and analysing reflection losses of various antireflective coatings consisting of SiO 2,Si 3N 4 or Al 2O 3 on the surface of Si optoelectric devices,the optimum data can be obtained.
     本文通过计算、分析在 Si光电器件表面由 Si O2 、Si3N4及 Al2 O3组成的不同减反膜的反射损耗 ,得出了最优化的膜层组合。
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     FABRICATION OF LONG WAVELENGTH 1.3μm SUPERLUMINESCENT DIODES WITH ANTIREFLECTIVE COATINGS ON LASER DIODE FACETS
     长波长1.3μm激光器腔面镀减反射膜超辐射发光管的制备
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     Antireflective coatings on facets of GaAlAs laser cavities
     GaAlAs激光器腔面减反射涂层
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     Through computing the reflectance of antireflective coatings combined with single SiO 2 or SiO 2 and Si 3N 4 on the surface of position sensitive detector for different wavelength, the optimum data can be obtained.
     本文通过计算 Si O2 单层以及 Si O2 和 Si3N4组成的双层减反膜对不同波长的反射率 ,给出了位敏探测器表面反射损耗的优化。
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  相似匹配句对
     Prospect for Preparation Technique of Antireflective Coatings
     激光减反射膜制备技术展望
短句来源
     PREPARATION OF SILICA ANTIREFLECTIVE COATINGS BY RAISE PROCESS
     溶胶—凝胶工艺提拉法制备二氧化硅增透膜
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     Coatings Abstracts
     涂料文摘
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     Coatings Express
     涂料快讯
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  antireflective coatings
The silicon solar cells with antireflective coatings revealed an increase in efficiency.
      
We report the optical transmission spectrum of cerium and samarium oxide films, and the use of these materials as antireflective coatings on silicon photoelectronic transucers.
      
MgF2 protective and antireflective coatings have been conventionally produced by sputtering or chemical vapour deposition CVD [1, 2], but here sol-gel routes to MgF2 are explored.
      
Sol-Gel Processing by Aging and Pore Creator Addition for Porous Silica Antireflective Coatings
      
This result allows to envisage the sol-gel processing at low temperature of multilayer antireflective coatings.
      
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In this paper,a Mn p-silicon MIS solar cell is reported.The difference between Mn and Cr barrier metals was compared,and the results showed theoretical expectation.By the use of SnO2 films as antireflective coatings,the short circuit current and the output power are increased by ~57%.The 3.4 cm2 area single crystalline Mn p-silicon MIS solar cell with the efficiency of 8.06% are obtained with Voc=512mV,Jsc=24.7mA/cm2,FF=0.68,at AM1.5;the efficiency of polycrystalline material MIS cell is 5.2%.The degradation...

In this paper,a Mn p-silicon MIS solar cell is reported.The difference between Mn and Cr barrier metals was compared,and the results showed theoretical expectation.By the use of SnO2 films as antireflective coatings,the short circuit current and the output power are increased by ~57%.The 3.4 cm2 area single crystalline Mn p-silicon MIS solar cell with the efficiency of 8.06% are obtained with Voc=512mV,Jsc=24.7mA/cm2,FF=0.68,at AM1.5;the efficiency of polycrystalline material MIS cell is 5.2%.The degradation data of the experimental cells are given.

本文报道了新提出的一种Mn-p型硅MIS太阳电池。实验比较了Mn和Cr势垒金属的差别。SnO_2作减反射膜,使短路电流和输出功率约增加57%。制得的3.4cm~2单晶硅Mn-MIS电池,在AM1.5下的转换效率为8.6%,短路电流密度为24.7mA/cm~2,开路电压为512mV,填充因数为0.68;多晶硅Mn-MIS电池效率为5.2%。给出了实验电池存放九个月后的衰降数据。

Considering the relation between refraction index of Al0.8Ga0.2As and wavelength of incident light,we calculate the refraction index and reflection index of Al0.8Ga0.2As,the collection efficiencies and shortcircuit current of solar cells for p-Al0.8Ga0.2As/p-GaAs/ n-GaAs structures with several antireflective coatings.The influences of light reflection on solar cell behaviours are estimated.

本文在计算Al_(0.8)Ga_(0.2)As的折射率和反射率以及各种抗反射层下p-Al_(0.8)Ga_(0.2)As/p-GaAs/n-GaAs太阳电池的收集效率和短路电流时,考虑了入射光波长对Al_(0.8)Ga_(0.2)As折射率的影响,并估计了表面光反射对电池性能的影响。

In this paper the effect of antireflective coating (ARC) on the emitting facet on the light power output of edge emitting diode is reported.In high speed GaAs/GaAlAs DH-LEDs with sputtered A12O3 as AR coating on the front emitting facet, a remarkable increase in light power output has been achieved. The fabricated LEDs have two types of structure:normal edge emitter and edge emitter with optical waveguide structure .A conventional rf sputtering equipment with the source power of 3kW at 13.5 MC was...

In this paper the effect of antireflective coating (ARC) on the emitting facet on the light power output of edge emitting diode is reported.In high speed GaAs/GaAlAs DH-LEDs with sputtered A12O3 as AR coating on the front emitting facet, a remarkable increase in light power output has been achieved. The fabricated LEDs have two types of structure:normal edge emitter and edge emitter with optical waveguide structure .A conventional rf sputtering equipment with the source power of 3kW at 13.5 MC was used in preparing the Al2O3 AR coating (refractive index 1.65~1.7) . A high purity A12O3 disk was employed as a target.Before sputtering the high-purity Ar gas was further purified by passing it through molecular sieve 5A and hot Ti coils.The light power output of a normal edge emitter as a function of current density is plotted in Fig.3.At a driving current density of 4kA/cm2, the light power increases from 370 nW for the uncoated LED to 495 uW for the same diode coated with~1890A Al2O3.This corresponds to a light-power increase of~34%.Fig.4 shows the light power output against current density for a LED with optical waveguide structure.The light power output, driven at a current density of 2kA/cm2,is raised from 350 uW for the uncoated LED to 580 uW for the same diode coated with~960A Al2O3.This corresponds to a light power increase of~65%.The light output increase of LEDs,driven at current 200mA,as a function of facet coating thickness has been determined.This functional relationship for both of the LEDs with different structure is approximately the same. The reflectivity at the front facet of the diode varied with the coating thickness in the range of 0 to 2800A. When AR-coating thickness is less than /4 (a thickness of~1250A), the light power output is raised with the thickness, and an increase in light power output of~80% for the diode coated with AR coating thickness of about A/4 has been obtained. In contrast with ARC thickness in the range from A/4 to A/2 (a thickness of ~ 2500 A) ,the light power output decreases with the increase in ARC thickness. Beyond the range of A/2, the light power output again increases with the AR thickness. Our results are approximately in agreement with the data obtained by electron beam evaporation of ARC A12O3 on front layer of edge emitting LEDs with the thickness of 0 to~2000A Ref.3.The increase in light output of LEDs was attributed to the increased transmission of the front facet caused by AR coating at the interface, and also this transmittance can be adjusted according to the AR coating thickness. In addition, the AR coating may be, in principle act as a protection film against erosion, thus improving the life time of the devices.We also found that the emission spectra and the nearfield distribution of the diode were not changed appreciably after sputtering the AR coating on the front emitting facet. It was shown that deterioration of the device characteristics have not occured.In addition Goodfellow et al.have observed that a region of low efficiency exists in both GaAs homojuncticn and GaAlAs heterojunction LEDs, usually extending to forward current around 20mA. Note that, in some of our diodes, the region of low efficiency resulted from the leakage current extended to more than 20 mA, but it was appreciably reduced by depositing Al2O3 on the front facet and at the same time the light output was increased. This can be attributed to that the A12O3 film is quite a high resistivity material and an AR coating, will reduce the leakage current at the edge of the device and also increase the light output of the diodes.

本文报导了在快速DH GsAs-GaAlAs边发光管发射端面上溅射沉积Al_2O_3抗反射层的研究,涂层厚度与输出光功率的提高密切相关,层厚接近λ/4值时,在200mA下光功率输出的提高达~80%。

 
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