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vapour growth
相关语句
  气相生长
     Seeded vapour growth of cadmium telluride using focused radiation heating
     用聚焦辐射加热法加籽晶气相生长碲化镉
短句来源
     CHEMICAL VAPOUR GROWTH OF CARBON WHISKERS ON CARBON FIBRE
     碳纤维表面气相生长碳晶须
短句来源
     On inspecting the vapour growth techniqe of C60 single crystal using seed crystal,we conclude that it is crucial to balance nucleation and growth properly,based on the theory of crystal growth dynamics.
     用晶体生长动力学考察了籽晶法气相生长C60单晶体的生长工艺,得出关键在于处理成核与长大两个因素之间的矛盾。
短句来源
  “vapour growth”译为未确定词的双语例句
     THE COMPOSITION AND MICROSTRUCTURE OF THE Ti(C,N) FILMS PRODUCED BY LASER CHEMICAL VAPOUR GROWTH
     激光化学气相反应生长Ti(C,N)薄膜的成分及微观结构
短句来源
     The secondary reinforcement, carbon whiskers, may grow on the surface ofparent reinforcement, carbon fibres, by chemical vapour growth from acetylene using Fe saltsolution as catalyzer. The optimal growing temperature is about 1000℃, and while the con-centration of catalytic solution is appropriate, the carbon whiskers may deposite uniformlyand link each other on the parent carbon fibre surface.
     用铁做催化剂,乙炔做原料气体,在碳纤维表面上长出二级增强相——碳晶须初步考察了生长温度、铁盐溶液浓度对碳晶须生长的影响结果表明,碳晶须生长的最佳温度在1000℃左右,在催化剂溶液浓度适当时,碳晶须均匀分布在母体纤维上,并把相邻的碳纤维连结起来;
短句来源
  相似匹配句对
     The growth of E.
     重组HBD 2对E.
短句来源
     MECHANISM OF GROWTH OF METAL WHISKERS BY MEANS OF VAPOUR REDUCTION
     由汽态还原生长金属须的机制
短句来源
     CHEMICAL VAPOUR GROWTH OF CARBON WHISKERS ON CARBON FIBRE
     碳纤维表面气相生长碳晶须
短句来源
     The Growth Of Debut
     陈奕 成长之翼
短句来源
     THE VAPOUR PRESSURES OF SUBSTANCES
     物质的蒸汽压
短句来源
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  vapour growth
Isothermal close-spaced vapour growth of CdTe for CdS/CdTe solar cells
      
Therefore, without definite pretreatment, commercially supplied ZnSe source material is unsuitable for the physical vapour growth of ZnSe in closed systems.
      
Chemical vapour growth of HfP whiskers and their properties
      
Chemical vapour growth of HfC whiskers and their morphology
      
The morphologies obtained in the combined process are shown to agree with general predictions based on the effects of gas phase supersaturation on vapour growth morphologies.
      
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The secondary reinforcement, carbon whiskers, may grow on the surface ofparent reinforcement, carbon fibres, by chemical vapour growth from acetylene using Fe saltsolution as catalyzer. The optimal growing temperature is about 1000℃, and while the con-centration of catalytic solution is appropriate, the carbon whiskers may deposite uniformlyand link each other on the parent carbon fibre surface. If the temperature or concentration istoo high, the coarse cluster of carbon may deposite on the fibre surface....

The secondary reinforcement, carbon whiskers, may grow on the surface ofparent reinforcement, carbon fibres, by chemical vapour growth from acetylene using Fe saltsolution as catalyzer. The optimal growing temperature is about 1000℃, and while the con-centration of catalytic solution is appropriate, the carbon whiskers may deposite uniformlyand link each other on the parent carbon fibre surface. If the temperature or concentration istoo high, the coarse cluster of carbon may deposite on the fibre surface. The mechanism ofcarbon whisker growth is believed that the carbon atoms in vapour phase dissolve first in theFe salt drops over fibres, then the solid carbon grains precipitate on the film surface.

用铁做催化剂,乙炔做原料气体,在碳纤维表面上长出二级增强相——碳晶须初步考察了生长温度、铁盐溶液浓度对碳晶须生长的影响结果表明,碳晶须生长的最佳温度在1000℃左右,在催化剂溶液浓度适当时,碳晶须均匀分布在母体纤维上,并把相邻的碳纤维连结起来;温度过高或催化剂溶液浓度过高,都会在碳纤维表面上形成大块碳沉积团碳晶须的生长是气相中的碳原子溶解于纤维表面上的催化剂液滴后,在液滴底部的碳纤维表面上析出固体碳的动态过程

On inspecting the vapour growth techniqe of C60 single crystal using seed crystal,we conclude that it is crucial to balance nucleation and growth properly,based on the theory of crystal growth dynamics. In order to effectively control the number of nucleation,the temperature distribution in our tabular furnace was redesigned and the minlma of temperature in the furnace was removed to a suitable position.The temperatures of the cool zone and the hot zone as well as crystal growth periori...

On inspecting the vapour growth techniqe of C60 single crystal using seed crystal,we conclude that it is crucial to balance nucleation and growth properly,based on the theory of crystal growth dynamics. In order to effectively control the number of nucleation,the temperature distribution in our tabular furnace was redesigned and the minlma of temperature in the furnace was removed to a suitable position.The temperatures of the cool zone and the hot zone as well as crystal growth periori were carefully selected. The biggest C60 single crystal we grew is bigger than 6 mm in size. The Laue's analysis of the crystal showed that the exposed surfaces of C60 crystal are of two orientations,namely {111} and {100}.

用晶体生长动力学考察了籽晶法气相生长C60单晶体的生长工艺,得出关键在于处理成核与长大两个因素之间的矛盾。对管状炉的温度场进行了重新设计,将冷端的最低温度点移至合适部位,有效地控制了成核的数目。通过不断地优化实验,经选出恰当的冷、热端温度及生长周期,生长出的C6。单晶的最大钱度超过6mm,且有较高的结晶品质。同一单晶的劳厄像显示出C60的生长暴露面有(111)和(100)两种。

 
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