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interline transfer
相关语句
  内线转移
     Design Consideration on an Interline Transfer Structure for CCD Image Sensor
     CCD 图像传感器内线转移结构设计考虑
短句来源
     A 756(H) ×581 (V) element interline transfer(IT) CCD imaging device has been successfully developed.
     成功地研制了756(H)×581(V)元内线转移CCD摄像器件。
短句来源
     Design on an interline transfer structure for CCD image sensor a- dopt to the P-well structure of photodiodes with a vertical overflow drain,and select to four-phase double clock pulse drive modes,the buried-channel and the correlative double sampling output amplifier.
     CCD 图像传感器内线转移结构的设计,采用有溢出漏的光电二极管 P 阱结构,选用四相二次时钟脉冲驱动方式,埋沟和相关双重取样输出放大器。
短句来源
     Two types of CCD image sensors used in still photography (full frame CCDimage sensors and interline transfer CCD image sensors), three types of color image capTure (3-CCD, one CCD wilh c6lor filter array and one monochrome CCD with color filterwheel ) are introduced.
     介绍了两种静止摄影用CCD(即全帧CCD和内线转移CCD)、三种彩色影像俘获方式(即三片CCD、带彩色滤色镜阵列的彩色CCD和带彩色转轮的单色CCD);
短句来源
  “interline transfer”译为未确定词的双语例句
     Monolithic PtSi Schottky-Barrier Infrared Interline Transfer CCD Focal Plane Arrays
     单片式PtSi肖特基势垒IR-ITCCD焦平面列阵
短句来源
     This paper reports a 150×150 element, two-phase buried channel ion implanted barrier interline transfer area array CCD image sensor, and compares it with a three-phase triple polysilicon frame transfer area arry device in principle, structure, performance and processing technology. The layout of the device is presented.
     本文介绍我们设计的一种二相埋沟离子注入势垒、行间转移型的150×150元CCD面阵摄象器件,并将这种器件与已研制成的三相三层多晶硅帧转移型面阵器件从原理、结构、性能、工艺等方面作了比较;
短句来源
     The detector array uses an interlaced scanning interline transfer configeration and a two-level polysilicon structure by 2 μm design rule.
     器件采用最小2μm设计规则,两层多晶硅结构。
短句来源
  相似匹配句对
     EECHNOLOGY TRANSFER
     山东省高新技术转移中心项目推荐
短句来源
     On Pragmatic Transfer
     语用迁移性之探讨
短句来源
     Design Consideration on an Interline Transfer Structure for CCD Image Sensor
     CCD 图像传感器内线转移结构设计考虑
短句来源
     Monolithic PtSi Schottky-Barrier Infrared Interline Transfer CCD Focal Plane Arrays
     单片式PtSi肖特基势垒IR-ITCCD焦平面列阵
短句来源
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  interline transfer
A silicon intensified target camera was found to be superior to slow scan cooled CCD and intensified interline transfer CCD cameras for monitoring lateral diffusion of rapidly moving FS with nanometer level precision.
      
Consequently, any of the equipment commonly available for conventional PIV (such as dual head Nd: YAG lasers, interline transfer CCD cameras, etc.) can be used with this more accurate algorithm.
      
Laser excitation is at 248 and 308?nm; the resulting fluorescence images are captured by an interline transfer CCD camera capable of acquiring two frames with a separation in time of as little as 500?ns.
      
The red light is focused by a relay lens onto a cooled 1030 1300 12 bit interline transfer CCD camera.
      
The smaller number of transfers, required by the interline-transfer structure was an attrac tive feature.
      
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This paper reports a 150×150 element, two-phase buried channel ion implanted barrier interline transfer area array CCD image sensor, and compares it with a three-phase triple polysilicon frame transfer area arry device in principle, structure, performance and processing technology. The layout of the device is presented. It is expected that the transfer efficiency, operation frequency and imaging definition of the device can be improved.But it needs rigorous ion implanting and large area photolithography,...

This paper reports a 150×150 element, two-phase buried channel ion implanted barrier interline transfer area array CCD image sensor, and compares it with a three-phase triple polysilicon frame transfer area arry device in principle, structure, performance and processing technology. The layout of the device is presented. It is expected that the transfer efficiency, operation frequency and imaging definition of the device can be improved.But it needs rigorous ion implanting and large area photolithography, LPCVD technology for polysilicon and silicon nitride. Finally, the clock waveforms driving the device are given.

本文介绍我们设计的一种二相埋沟离子注入势垒、行间转移型的150×150元CCD面阵摄象器件,并将这种器件与已研制成的三相三层多晶硅帧转移型面阵器件从原理、结构、性能、工艺等方面作了比较;该器件的版图结构,预计在转移效率、工作频率、摄象清晰度等性能有较大的改进,但在工艺上要求有高精度的离子注入、高精度的大面积光刻、低压CVD生长多晶硅和氮化硅等工艺技术;最后给出了器件的驱动时钟波形。

This paper comprehensively describes the advantages of solid state image devices. The recent development of charge coupled devices(CCD) is emphasized. Several novel recently developed are presented, such as virtual phase CCD image sensor, charge priming device image sensor, frame-interline transfer CCD image sensor and overliad CCD image sensor with three dimensional integrated circuit.

本文重点介绍电荷耦合器件(CCD)的发展状况和最近出现的一些新器件的结构,如:虚相CCD摄象器;电荷引发器件摄象器;帧-行间转移CCD摄象器及具有三维集成电路雏型的叠层式CCD摄象器.

Design on an interline transfer structure for CCD image sensor a- dopt to the P-well structure of photodiodes with a vertical overflow drain,and select to four-phase double clock pulse drive modes,the buried-channel and the correlative double sampling output amplifier.The optimal spectrum response of this device is obtained and its peak response appears at a wavelength of 550nm.The noise equivalent signal is reduced to below 50 electrons.The dynamic range reached to 60 dB.The blooming is suppressed completely...

Design on an interline transfer structure for CCD image sensor a- dopt to the P-well structure of photodiodes with a vertical overflow drain,and select to four-phase double clock pulse drive modes,the buried-channel and the correlative double sampling output amplifier.The optimal spectrum response of this device is obtained and its peak response appears at a wavelength of 550nm.The noise equivalent signal is reduced to below 50 electrons.The dynamic range reached to 60 dB.The blooming is suppressed completely and the saturation-level shading can be removed.

CCD 图像传感器内线转移结构的设计,采用有溢出漏的光电二极管 P 阱结构,选用四相二次时钟脉冲驱动方式,埋沟和相关双重取样输出放大器。这种器件获得了最佳光谱响应,其峰值为550nm,噪声等效信号降低到50个电子以下;动态范围达到60分贝。电晕现象将受到抑制,饱和电平寄生信号可得到消除。

 
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