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pulse etching
相关语句
  脉冲腐蚀
     Preparation of Porous Silicon by Pulse Etching Method
     用脉冲腐蚀制备发光多孔硅
短句来源
     Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside. Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current etching process.
     采用脉冲腐蚀方法,研究多孔硅的动态腐蚀过程,测定了动态电流和时间的关系,提出并讨论了动态腐蚀机理.用脉冲腐蚀制备得到发光多孔硅,与直流腐蚀相比较,脉冲腐蚀能得到均匀性更好、发光更强的多孔硅,而且PL峰位有一定的蓝移,我们认为脉冲腐蚀是一种更优秀的制备方法,并对此作了初步的讨论.
短句来源
  相似匹配句对
     Preparation of Porous Silicon by Pulse Etching Method
     用脉冲腐蚀制备发光多孔硅
短句来源
     Theoretical Study on the Electrochemical Micromachining by Pulse Confined Etching
     脉冲约束刻蚀微加工理论探讨
短句来源
     Pulse Subtracter
     脉冲减法器
短句来源
     Taking the Pulse
     脉冲爆震发动机技术的最新进展
短句来源
     Plasma Etching
     等离子体刻蚀
短句来源
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  pulse etching
We developed a XeF2 pulse etching system and clarified the Si etching characteristics.
      


Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside.Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant...

Abstract Pulse etching method is adapted to study the dynamical etching process in preparmg porous silicon. The relationship between the dynamical current and etching time is measured and is supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside.Porous silicon samples prepared by pulse etching process have better uniformity,stronger luminescence intensity and some blueshift in PL spectra compared to that of the samples prepared by constant current etching process. It is suggested that pulse etching is a better method in preparing porous silicon.

采用脉冲腐蚀方法,研究多孔硅的动态腐蚀过程,测定了动态电流和时间的关系,提出并讨论了动态腐蚀机理.用脉冲腐蚀制备得到发光多孔硅,与直流腐蚀相比较,脉冲腐蚀能得到均匀性更好、发光更强的多孔硅,而且PL峰位有一定的蓝移,我们认为脉冲腐蚀是一种更优秀的制备方法,并对此作了初步的讨论.

In order to search for an economical high depth-width ratio micro-fabrication method and build up an excimer laser direct etching system, the relationship between average etching velocity and laser pulse energy density during excimer laser direct etching was investigated by using KrF excimer laser with a wavelength of 248 nm to ablate and etch glass material accurately located with a high-precision micro-motion controlling system. Experimental results showed that all the yielded grooves are V-grooves; the single...

In order to search for an economical high depth-width ratio micro-fabrication method and build up an excimer laser direct etching system, the relationship between average etching velocity and laser pulse energy density during excimer laser direct etching was investigated by using KrF excimer laser with a wavelength of 248 nm to ablate and etch glass material accurately located with a high-precision micro-motion controlling system. Experimental results showed that all the yielded grooves are V-grooves; the single laser pulse etching velocity decreases as the number of laser pulses increases; the depth of the yielded grooves becomes constant when the laser pulses add up to a definite number, there is an upper limit threshold for excimer laser pulse energy density in the etching process; and rectangular deep grooves or cylindrical deep holes can be produced by using parallel laser beams or dynamic control of etching process.

为了探索低成本、大深宽比加工方法,建立了实用的准分子激光微加工系统。以玻璃为实验靶材,用精密微动平台准确调节靶材位置,利用波长248nm的KrF准分子激光器,研究了准分子激光直写刻蚀过程中平均刻蚀速率与激光脉冲能量密度之间的关系。加工出的沟槽剖面形状均呈现锥型,单脉冲烧蚀速率随脉冲数的增加而减小,激光脉冲对材料的刻蚀具有能量阈值,加工槽的深度具有上限值。采用平行激光束或对加工过程进行动态控制还可实现矩形深槽或圆柱深孔的加工。

 
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