助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   rectifying behavior 的翻译结果: 查询用时:0.203秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

rectifying behavior
相关语句
  整流特性
     The current-voltage (I-V) characteristics showed significant rectifying behavior, breakdown voltage of 1.1 V and threshold voltage of 4V. The fitting results show that current transporting model for the n-BN/p-Si film heterojunctions was the same as Tunnel-Recombination transporting model.
     所形成的异质结有整流特性,开启电压为4V。 正向导电特性的拟合结果表明,异质结的电流输运符合“隧道—复合模型”理论。
短句来源
     The Al/polymeric film/ITO (indium tin oxide) sandwich cells made of the filmsshowed rectifying behavior and photovoltaic response.
     由这些聚合物薄膜制备的Al/聚合膜/ITO(铟锡氧化物透明电极)夹层元件显示出整流特性和光生伏打效应。
短句来源
     magnetron sputtering technique. Electro-yellow-luminescence spectra are measured from Au/Ge/silicon oxide nanometer multilayer films/p-Si,and the structure has rectifying behavior.
     测量到了来自Au/锗/氧化硅纳米多层膜/p-Si结构的电致黄光发射,并发现该纳米结构具有整流特性.
短句来源
  相似匹配句对
     Study on Rectifying the Inappropriate Behavior of Entrepreneurs of SOEs
     国有企业企业家失范行为矫正研究——政府主导下的制度变迁
短句来源
     The behavior of the pile?
     简述了桩 网复合地基的组成和工作原理 ;
短句来源
     Behavior·Environment
     行为·环境
短句来源
     Emotional Therapeutics:New Rectifying Approach for Children's Behavior Problem
     情绪疗法:矫正儿童行为问题的新视角
短句来源
查询“rectifying behavior”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  rectifying behavior
Upon annealing to ~600-700°C, the diodes show slight deterioration in rectifying behavior due to the onset of metallurgical reactions with the GaN.
      
Furthermore, a CdTe/n+-Si heterojunction diode was fabricated that exhibited clear rectifying behavior.
      
While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior.
      
It is shown that the asdeposited Nb and Nb/Au contacts exhibit rectifying behavior.
      
However, J-V curves of the DA contact with a ZnTe intermediate layer showed rectifying behavior.
      
更多          


Plasma polymerization of TCNQ(tetracyanoquinodimethane) was carried out by using acapacitively coupled radio-frequency bell jar apparatus with internal electrodes. Some semi-conductive polymeric films with conductivities ranged from 10~(-8) to 10~(-6). Scm~(-1) were ob-tained. The Al/polymeric film/ITO (indium tin oxide) sandwich cells made of the filmsshowed rectifying behavior and photovoltaic response. Photoconductivity was also observedwith the films. The infrared and ultraviolet spectroscopic results...

Plasma polymerization of TCNQ(tetracyanoquinodimethane) was carried out by using acapacitively coupled radio-frequency bell jar apparatus with internal electrodes. Some semi-conductive polymeric films with conductivities ranged from 10~(-8) to 10~(-6). Scm~(-1) were ob-tained. The Al/polymeric film/ITO (indium tin oxide) sandwich cells made of the filmsshowed rectifying behavior and photovoltaic response. Photoconductivity was also observedwith the films. The infrared and ultraviolet spectroscopic results showed that the goodsemiconductive properties are due to the more extended conjugated structure in the films.

本文采用内部电极、电容耦合式钟罩型射频等离子体聚合装置,首次进行了四氰代对二次甲基苯醌(TCNQ)的等离子体聚合,得到了电导率为10~(-8)~10~(-6)Scm~(-1)的聚合物半导体薄膜。由这些聚合物薄膜制备的Al/聚合膜/ITO(铟锡氧化物透明电极)夹层元件显示出整流特性和光生伏打效应。这种聚合物薄膜还具有光电导性质。红外光谱(IR)、紫外光谱(UV)的研究结果表明,优良的半导体特性归因于聚合膜中存在有较大范围的π电子共轭结构。

The proposition of overdoing in rectifying behavior is lopsided. The right demonstration is that the rectification is not necessarily overdone, that is to say, on general conditions rectification needn't be overdone, but on special conditions it need. There are five reasons for the former and three for the latter.

矫枉过正是一个片面的命题。正确的提法应当是矫枉未必过正 ,即一般情况下的矫枉不必过正和少数特殊情况下矫枉可以过正。一般情况下矫枉不必过正有五方面的理由 ,三种情况下矫枉可以适当过正

The interface between metals and organic semiconductors plays a central role in the physics of polymer light-emitting diodes. In addition, the asymmetry in the work function of the two electrodes is responsible for the polymer light-emitting diodes rectifying behavior and governs the injection of carriers in polymer. In order to fabricate efficient devices and to minimize injection barriers, the low work function cathodes and high work function anodes are desirable. Ideal electrode materials have been...

The interface between metals and organic semiconductors plays a central role in the physics of polymer light-emitting diodes. In addition, the asymmetry in the work function of the two electrodes is responsible for the polymer light-emitting diodes rectifying behavior and governs the injection of carriers in polymer. In order to fabricate efficient devices and to minimize injection barriers, the low work function cathodes and high work function anodes are desirable. Ideal electrode materials have been difficult to obtain, however, an incorporation of injecting inter-layers at electrode/polymer interfaces has been used as an alternative route towards enhanced carrier injection. The performance of polymer light-emitting diodes with inserting metal fluoride insulating layer between the metal cathode and active polymer was studied. As for the polymer light-emitting diodes, optimization of charge injection lies in the dominant factors for substantive improvement performance. Since it is minority carriers dominate the recombination thus the radiation, their injection takes priority over that of majority carriers. Generally in semiconducting polymers, holes are majority carriers while electrons asminority, the carrier misbalance between electrons and holes further deteriorate in the fact that hole usually take possession of higher mobility and smaller injection barrier. To balance injection charge carriers and facilitate the electron injection, there are two commonly used stratagems in cathode fabrication. One is to employ low work function metals such as barium and calcium as cathode though they are susceptible to degradation upon water vapor and oxygen. The other choice is proposed to insert an insulating thin layer usually metal fluoride between polymer/ electrode interfaces to build a bilayer cathode. Proper inserting of insulating layer would lead to improvement in the overall working performance. But the thickness of the insulating layer is a fatal factor that influences the enhancement effect. As show in the experiment result, the LiF/Al double-layer-cathode devices are capariable with Ba (Ca)/Al electrode devices in luminescence performance. Band bending and injection potential decrease of minority carrier caused by the inlay of metal fluoride insulating layer, are proposed to be responsible for the enhanced electron injection and improved performance in polymer light emitting diodes.

在以聚合物发光材料MEH PPV为发光层的聚合物发光二极管(PLEDs)的金属阴极与聚合物发光层之间插入一层绝缘的金属氟化物,发光器件的发光性能有所提高,而且绝缘层的厚度会影响器件性能提高的最终效果。特别是具有LiF/Al的双层电极的发光器件,其发光特性与工作性能优良,但稳定性较差的Ba(Ca)/Al电极结构器件的发光特性具有可比性。初步分析表明绝缘层的插入造成了发光聚合物层与金属电极界面的能带发生弯曲,降低了发光器件中少数载流子电子的注入势垒,提高了发光器件中少数载流子电子的注入效率。从而最终导致了发光器件的开启电压、发光强度、外量子效率及电流效率等发光性能指标的显著提高。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关rectifying behavior的内容
在知识搜索中查有关rectifying behavior的内容
在数字搜索中查有关rectifying behavior的内容
在概念知识元中查有关rectifying behavior的内容
在学术趋势中查有关rectifying behavior的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社