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semiconductor micro
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  “semiconductor micro”译为未确定词的双语例句
     The development of computer, semiconductor, micro_electronics and RF technology promote the Radio-Frequency Identification technique. With the support of government and less standard obstacle, it grows rapidly and extends from military products to civil products, from close systems to open systems.
     计算机,半导体,微电子与射频技术的发展催生和催熟了无线射频识别RFID技术,政府的支持与标准的解限使其从军用扩展到民用,从封闭系统向开放式系统快速发展。
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     The process of field-induced oxidation using scanning tunneling microscope (STM)/atomic force microscope (AFM) can be applied to the fabrication of semiconductor micro devices and nano-electric devices.
     利用扫描探针显微镜(SPM)进行电场诱导氧化加工的方法可应用于半导体微型器件和纳米电子器件的加工制作.
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     Research on micro-EDM for semiconductor silicon
     半导体硅材料的电火花加工技术研究
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     Station Model of Micro-cavity Semiconductor Lasers
     微腔半导体激光器的结模型
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     Micro-accelerometer
     微加速度计
     Semiconductor Photonics
     半导体光子学
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     Micro-Endodontics
     显微根管治疗
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  semiconductor micro
Structural and optical properties of the catalytically grown semiconductor micro- and nano-crystals were characterized using various analytic techniques.
      
The catalytic reaction concept was introduced in the growth of semiconductor micro- and nano-crystals.
      
Catalytic growth of semiconductor micro- and nano-crystals using transition metal catalysts
      
Our theory predicts that photoacoustics should be a profitable method for the investigation of semiconductor micro- and nanostructures.
      
The work describes multiband photon detectors based on semiconductor micro-and nano-structures.
      


Semiconductor InGaAsP microdisk laser have been successfully fabricated firstly in the country. The mi-crodisk was made on InGaAsP/InP epitaxial wafer with liquid phase epitaxy (LPE)grown single quantum well-separate confinement heterostructure(SQW-SCH).The diameters of the disk were in the range of 2 to 7μmwith the thicknesses from 0.2 to 0.4 μm. The disk patterns were produced by electron beam lithography. Theelectron beam writing system was set up in a scanning electron microscope(SEM)connected by a personal...

Semiconductor InGaAsP microdisk laser have been successfully fabricated firstly in the country. The mi-crodisk was made on InGaAsP/InP epitaxial wafer with liquid phase epitaxy (LPE)grown single quantum well-separate confinement heterostructure(SQW-SCH).The diameters of the disk were in the range of 2 to 7μmwith the thicknesses from 0.2 to 0.4 μm. The disk patterns were produced by electron beam lithography. Theelectron beam writing system was set up in a scanning electron microscope(SEM)connected by a personal com-puter. The three dimensional micro disk lasers were then prepared by selective chemical etching process whichwas checked by KYKY-1000B SEM with an accessory image processing system. This successful fabrication pro-vides a good basis for further study on the semiconductor micro disk laser.

本研究用扫描电镜(SEM)电子束曝光技术和相应的计算机联机成像程序,在InGaAsP/InP液相外延片上形成电子束光刻图形,并采用选择腐蚀等技术,由KYKY-1000BSEM并附X射线能谱仪和图像处理系统对研制过程进行监控,成功地在国内首次研制出由InGaAsP单量子阶分别限制的五层四元系组成的新型半导体微盘激光器,微盘直径为2-7μm,盘厚0.2-0.4μm。这一成功为开展半导体微盘激光器的研究打下了良好的基础。

:In this paper,we introduced the dressed exciton model of the semiconductor micro cavity device.In the semiconductor quantum well(QW) of vertical cavity surface emission (VCSE) device,the excitons first coupled to the cavity through the intra electromagnetic field and formed the dressed excitons.Then these dressed excitons decayed into the vacuum cavity optical mode,as a multi particles process.Through the QED method,the dipole emission density and system energy decay equation were obtained.From...

:In this paper,we introduced the dressed exciton model of the semiconductor micro cavity device.In the semiconductor quantum well(QW) of vertical cavity surface emission (VCSE) device,the excitons first coupled to the cavity through the intra electromagnetic field and formed the dressed excitons.Then these dressed excitons decayed into the vacuum cavity optical mode,as a multi particles process.Through the QED method,the dipole emission density and system energy decay equation were obtained.From the discussion of the solutions in three regimes,the superradiation and anisotropic decay rate were well understood.

本文建立了半导体微腔的缀饰激子模型。在 VCSEL 器件量子阱中的激子首先通过内电磁场与腔耦合 ,形成缀饰态。而后作为多粒子过程 ,缀饰激子与腔内真空场耦合产生辐射。通过 QED方法 ,我们得到偶极子辐射密度方程和系统能量衰变方程。从方程解的讨论中 ,我们得到超辐射和偶极子微腔方向效应的结果 ,同时预言了当内场耦合足够强时 ,缀饰激子可以直接辐射到一个很窄的激光模中。

Based on the development order of history, an overview for micro cavity physics of quantum well vertical cavity surface emitting lasers is presented. It includes vertical cavity surface emitting lasers, cavity quantum electrodynamics, semiconductor micro cavity physics. The purpose is to show a detailed picture of the development of quantum well vertical cavity surface emitting lasers and the origin of micro cavity physics ideas.

根据发展历史的顺序 ,对量子阱垂直腔面发射激光器微腔物理进行概述 ,其中包括垂直腔面发射激光器、腔量子电动力学和半导体微腔物理。给出半导体垂直腔面发射激光器及其微腔物理思想来源的详细图像

 
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