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defect energy
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  缺陷态能量
     MECHANISM OF ELECTROLUMINESCENCE FROM a\|Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a\|Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA
     非晶硅电致发光机理及用电致发光谱研究太阳能电池本征层中的缺陷态能量分布
短句来源
  缺陷能级
     Defect Energy Level of(CdSe)_1/(ZnSe)_1 Stress-Layer Semiconductor Material
     (CdSe)_1/(ZnSe)_1应力半导体材料缺陷能级
短句来源
     Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80 ̄110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels. Results show that E 3 and E 4 levels are moninly recombination centers.
     本文研究了高阻(80~110Ω·cm)NTD-FZ-Si-P+n结中经电子辐照缺陷态在真空条件下的等时、等温退火特性,获得了5个缺陷能级,结果表明其中E3,E4能级是主要的复合中心.
短句来源
     Defect Energy Level and Photorefractive Effect in Fe:BSO Crystal
     Fe∶BSO晶体的缺陷能级及光折变效应的研究
短句来源
     Analysis of the Defect Energy Level of CdZnTe Single Crystal
     CdZnTe晶体的缺陷能级分析
短句来源
     The local properties and defect energy level of(CdSe) 1/(ZnSe) 1 stress layer superlattice(SLS) are investigated through a theoretical study using the calculations of the total,local and partial density of states by the real space recursion method. Some valuable conclusions were obtained.
     用实空间 Recursion方法计算 (Cd Se) 1 / (Zn Se) 1 应力半导体材料的总态密度、局域态密度、分波态密度 ,研究了局域特性和缺陷能级 ,得出了一些有价值的结论。
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  “defect energy”译为未确定词的双语例句
     The TL glow curves showed that the TL peaks of CaTP, CaZnTP and Ca_2Zn_4TP are at about 49 ℃, 62 ℃ and 75 ℃, and the relative intensity of TL are 220,186 and 1 254, respectively, which indicate the trap deep levels of defect energy is the order of Ca_2Zn_4TP>CaZnTP>CaTP, the speed of electron transgression is CaZnTP>CTP>Ca_2Zn_4TP.
     CaTP,CaZnTP和Ca2Zn4TP的热释光峰值分别是49℃,62℃和75℃,热释峰相对强度分别是220,186和1254,这表明掺Pr3+钛酸盐晶体中的缺陷陷阱能级深度为Ca2Zn4TP>CaZnTP>CaTP,陷阱中电子的逸出速率是CaZnTP>CTP>Ca2Zn4TP.
短句来源
     Two defect energy levels,with the peaks at 1.239eV and 1.408eV, areobserved.
     1.239eV峰可能是镓空位(V_(Ga))与S的络合物;
短句来源
     The defect energy levels were verified. The energy interval between the bottom of the conduction band and interstitial zinc level is 0.4 eV. As for zinc vacancy, oxide antisite, oxygen vacancy, and interstitial oxygen,the energy intervals are 3.06 eV, 2.28 eV, 1.56 eV and 2.1 eV, respectively.
     锌填隙缺陷在距离导带底0.4eV处产生浅施主能级,锌空位缺陷在价带顶0.3eV处产生浅受主能级,氧锌替位缺陷在价带顶1.08eV处产生深受主能级,在导带底1.56eV处有氧空位缺陷引起的深杂质能级产生,氧填隙缺陷在价带顶1.35eV处产生深受主能级。
短句来源
     Investigation of Defect Energy Levels in Heavily S Implanted Si-GaAs
     注S-SI GaAs晶体中的缺陷
短句来源
     Our calculation results showed that F, F+ and F2+ -- center in MgO crystal introduced defect energy levels in the forbidden gap. The calculated absorption energies for F and F+- center were 4. 67eV and 4. 66eV, respectively. Also, big photoelectron energies were required for F and F+ --centers.
     计算结果表明,F,F+和 F2+心在 MgO晶体的禁带中引入了色心能级,F和 F+心的光学跃迁能分别是 4. 67eV和 4. 66eV,电子从色心激发态跃迁到导带底需要吸收大的光电子跃迁能量。
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  defect energy
The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized.
      
The formation of deformation structure accompanying a change in the packing-defect energy (PDE) and the conditions of deformation of copper-based solid solutions under shock-wave loading were investigated by the method of optical microscopy.
      
Role of packing-defect energy in the localization of plastic strain during shock-wave loading of copper-based solid solutions
      
It was established that a decrease in the packing-defect energy affects the change in the substructure in the same direction as does an increase in solid solution hardening.
      
Results are presented from a study on the defect energy distributions in amorphous films of silicon monoxide.
      
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A systematic investigation and numerical results of calculation of T2 symmetric deep level wave function induced by short range defect potential in Si are described, based on a recently developement on site defect potential Green's function method. [5,6] Such a complete information of T2 symmetric wave functions in Si is presented for the first time. The occupation probability P1 of the wave function located around four nearest neighbour sites of the defect center has a peak exceeding 50%. This part of wave...

A systematic investigation and numerical results of calculation of T2 symmetric deep level wave function induced by short range defect potential in Si are described, based on a recently developement on site defect potential Green's function method. [5,6] Such a complete information of T2 symmetric wave functions in Si is presented for the first time. The occupation probability P1 of the wave function located around four nearest neighbour sites of the defect center has a peak exceeding 50%. This part of wave function could be described by T2 symmetric combination of four hybrid orbital quasi dangling bonds located at four nearest neighbour sites and pointing toward the defect center. The total occupation probability of wave function located on the 0,1,2 shells arround the defect center is about 70%. The rest part of the wave function extends diversely over a wide range of space. The characteristics of the wave function are insensitive to the defect energy over most part of the energy range in the gap. Only when the defect energy level approaches very closely to the band edge of either conduction (Ec) or valence (Ev) band, the aforementioned peak P1 disappears and the wave function extends smoothly all over the space. A T2 symmetric deep level due to ideal vacancy is found at 0.51 eV up to the Ev .

木文在文献[5,6]所发展的在位缺陷势格林函数方法基础上,进一步讨论Si中短程缺陷势引入的T_2对称深能级波函数性质。第一次给出了Si禁带中部很宽能量范围之内T_2对称波函数的完整数据。波函数在缺陷最近邻四个格点的占据几率P_1有一高达50%以上峰值。该部分相当于四个最近邻格点指向缺陷的杂化轨道准悬键的T_2组合。第0,1,2三个格点壳层波函数占据几率之和约为70%。波函数其余部分较平缓地分布在一相当大空间。波函数的以上特征与禁带中部能量位置关系不灵敏。但在靠近导带E_c和满带E_v的浅能量区,以上P_1峰趋于消失,整个波函数在空间的分布趋于平坦。Si空位在禁带引入一个T_2对称深能级,位于E_v以上0.51eV处。

The photoluminescence (PL) measurements have been carried out on heavily S implantedsemi-insulating GaAs.Two defect energy levels,with the peaks at 1.239eV and 1.408eV, areobserved.The 1.408eV peak is ascribed to V_(As)Si_(As). The formation of this complex is analys-ed in terms of the transformation of Si_(Ga) to Si_(At), which further combines with V_(As) during annealing.nealing.

对注S-SI GaAs单晶作光致发光测试,确定了两个缺陷能级.1.239eV峰可能是镓空位(V_(Ga))与S的络合物;1.408eV峰是由注S引起SI-GaAs衬底中残留杂质Si发生迁移,增加了Si受主(Si_(As))密度,部份Si_(As)与砷空位(V_(As))相互作用形成V_(As)-Si_(As)络合物而产生的.

Under the extended defect potential approximation, the electronic wave function which is a function of the PV defect energy has been derived using a tight binding Koster-Slater Green function technique. Taking the experimental value of the defect energy level as input parameter, the obtained wave function describes quantitatively the data of the electron paramagnetic resonance and electron-nuclear double resonance. Especially, the hyperfine interaction constants of the four nearest neighbor atoms...

Under the extended defect potential approximation, the electronic wave function which is a function of the PV defect energy has been derived using a tight binding Koster-Slater Green function technique. Taking the experimental value of the defect energy level as input parameter, the obtained wave function describes quantitatively the data of the electron paramagnetic resonance and electron-nuclear double resonance. Especially, the hyperfine interaction constants of the four nearest neighbor atoms around the vacancy given by the theory, are in good agreement with the experiment.

本文采用扩展的缺陷势,利用一个紧束缚的Koster-Slater格林函数方法,确定了磷-空位缺陷的波函数为深能级E的函数,以深能级的实验值为输入参数,得到的波函数定量地描述了EPR和ENDOR实验资料,特别是,理论给出空位的四个近邻原子上的超精细相互作用常数α和b,同实验符合得很好。

 
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