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  p region
     The mutation rates of motif YMDD(nt522、528)in HBV P region was 5.45%(12/22).
     P区YM DD基序n t552、528位点变异率为5.45%(12/220)。
短句来源
     It's HBV-DNA C region sequence had mutation on 2 sites (nt 2412 T/C; nt 2413 T/C)and 1 mutation P region (nt 741 A/G, also YMDD/YVDD) compared with HBV international Genbak reference sequence.
     对 1例 HBV- DNA在 10 7copies/ ml级标本进行 HBVDNA C区和 P区序列测定 ,用 BL AST软件与国际基因库对比 ,结果 ,C区 nt 2 4 12位 T→ C,nt 2 4 13位 T→ C,P区 nt 74 1位A→ G(YMDD→ YVDD)。
短句来源
     Methods Detection of gene mutations in HBV pre-core nt1896、1814,basic core promoter(BCP)nt1762、1764 and P region nt552.528 in 220 patients with hepatitis B of various clinical types.
     方法应用基因芯片技术检测220例不同临床类型乙肝患者的血清前C区n t1896、1814,HBVC区基因启动子(BCP)n t1762和1764以及P区n t552、528位点的变异。
短句来源
     Methods: HBV-DNA was quantitatively detected by real-time PCR in 36 HIV/HBV superinfection subjects, C region and P region HBV-DNA in high copies HBV-DNA subjects were detected by routine PCR, PCR products were purified and sequenced and compared with the HBV international Genbank using BLSAT softy ware.
     方法 :用 HBV- DNA荧光定量试剂盒 ,定量检测 36例 HAART治疗的 HIV/ HBV重叠感染者中 HBV- DNA,用 HBV- DNA C区和 P区引物常规扩增 HBV- DNA C区和 P区产物 ,PCR产物纯化后测序 ,用 BL AST软件分析序列 ,与国际 HBV基因库对比。
短句来源
     Objective To detect 12 mutation sites located in S, pre-C, X and P region of hepatitis B virus genome.
     目的 利用寡核苷酸芯片平行分析乙肝病毒表面抗原区S、前核心抗原pre C区、X区、聚合酶P区 12个已知的突变位点。
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  p area
     Utilizing the link between its, 0E, 1E and 13 kinds pka1 of p area inoganic hydride, 2 linear regression equations were suggestde.
     利用其 0阶 (0 E)和 1阶 (1E)指数 ,与 13种 p区无机氢化物的 pKa1关联 ,拟合成 2个线性回归方程 .
短句来源
     Utilizing the link between its 1Z, 1Z and (XA-xH)2 and 13 kinds pKa1 of p area inoganic hydrides, two regression equations were suggested, the relevant coefficient and the relevant exponent are is 0. 993 8 and 0. 996 1 respectively, which show that the structure selectivity is unique. Hence the calculation gains better results.
     用其1阶(1z)指数,1阶指数和元素电负性差的平方(xA-xH)2与13种p区无机氢化物的pKa1值关联,拟合成2个回归方程,其相关系数与相关指数分别为0.993 8和0.996 1.结构选择性达到唯一性表征,预测取得了较好的结果。
短句来源
     Utilizing the link between its 1B, 1B and ( x _A- x _H) 2 and 13 kinds p K_ a_1 of p area inoganic hydrides. The writer suggests 2 regression equations.
     用其 1阶 (1 B)指数 ,1阶指数和元素电负性差的平方 (x A- x H) 2 ,与 13种 p区无机氢化物的 p Ka1 值关联 ,拟合成 2个回归方程 ,其相关系数与相关指数分别为 0 .9934和0 .995 6。
短句来源
     Entightened by the topological index of the Randic molecular connection,the author develops in this paper new molecular connection topological index mZ,Utilizing the link between its 0 Z, 0 Z and 1 Z, 1 Z and Yang Pin's ρ and P area pKa 1 of inorganic hydrides,the writer suggests 3 linear equations. the related coefficient and related index different is 0.9938,0.9944 and0.9948. The structure selectivity of topological index achieves its own only expression.
     受Randic分子连接性拓扑指数mX的启发 ,本文构建了一种新的分子连接性拓扑指数mZ。 用mZ的 0 ,1阶指数0 Z ,0 Z和 1Z ,0 Z和杨频的 ρ值分别与 p区无机氢化物的 pKa1值关联 ,拟合成 3个线性方程 ,其相关系数与相关指数分别为 0 .9938,0 .9944和 0 .9948,拓扑指数的结构选择性满足唯一性表征。
短句来源
     THE TOPOLOGICAL INDEX ~mE OF VALENCE ELECTRON ORBIT ENERGY AND CALCULATION OF ACIDITY OF P AREA HYDRIDE
     价电子轨道能量拓扑指数~mE及其对P区氢化物酸性的预测
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  p-region
     Result In the 42 samples of HBV patients,the respective ratio of mutation about 1896,1814,1762,1764 and P-region 552 were 40% ,31 % ,50% ,50% and 10%;
     结果 42例乙型肝炎患者HBV核苷酸序列1896、1814、1762、1764、P区552位点突变率分别为40%、31%、50%、50%、10%;
短句来源
     Comparison of antiviral effect between X-region and P-region antisense RNA in HBV transgenic mice
     反义X区RNA和反义P区RNA小鼠体内抗HBV的比较
短句来源
     Relationship of the Genetic Diversity within the V-region,P-region and C-terminus of Surface Protein of Streptococcus mutans to Dental Caries
     变形链球菌表面蛋白V区、P区及C末端遗传多态性与龋病发生关系的研究
短句来源
     Relationship between genetic diversity of surface protein of Streptococcus mutans and dental caries.Ⅱ Sequence of V-region and P-region gene of surface protein of Streptococcus mutans
     变形链球菌表面蛋白遗传多态性与龋病发生关系的研究Ⅱ表面蛋白V区、P区编码基因序列的测定
短句来源
     Objective To gain an understanding of the relationship between the genetic diversity within the V-region,P-region, C-terminus of surface protein of Streptococcus mutans (serotype c) and their adherent abilities.
     目的 了解变形链球菌表面蛋白 V区、P区及 C末端遗传多态性与其粘附性能的关系。
短句来源
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  p-block elements
     On the Instability of Some Heavy Atoms of Higher Oxidation States in P-block Elements
     P区重元素高氧化态的不稳定性
短句来源
     The structures and properties of the compounds are profundity affected by the unusual stereochemical effects of the so-call lone-pair elements in heavy p-block elements.
     p区重元素亚价态离子具有立体化学活性的孤对电子,对化合物的结构和性能都产生很大的影响。
短句来源
     The structures and properties of the compounds are profoundly affected by the unusual stereochemical effects of the so-called lone-pair electrons in heavy p-block elements in lower oxidation states.
     p区重元素亚价态离子具有立体化学活性的孤对电子,对化合物的结构和性能都产生很大的影响。
短句来源
     The structures and properties of the compounds are profundly affected by the unusual stereochemical effects of the so-call lone-pair elements in heavy p-block elements in lower oxidation states.
     p 区重元素亚价态离子具有立体化学活性的孤对电子,对化合物的结构和性能都产生很大的影响。
短句来源

 

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  p region
The low-temperature phase is assumed to disappear as the pressure increases, and this phase exists in a closed T-P region in the phase diagram.
      
It is noted that the current-induced increase in the hole concentration near the p region due to a reduction in the effective lifetime of the carriers in the lasing mode additionally extends the frequency tuning range.
      
The structures are grown by metal-organic epitaxy and arranged with the p region in contact with the heat sink.
      
The MCD signal integrated over the entire 2p region does not average to zero, as one would have expected from the sum rule for photoemission to a non-interacting continuum state.
      
Mutational studies have identified part of the S5-S6 loop of voltage-dependent K+ channels (P region) responsible for tetraethylammonium (TEA) block and permeation properties.
      
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  p area
A positive p area appears in the south near the CL1912 cyclone.
      
At 0000 UTC 22 February 1998, the negative p area is located to the northwest of the CL1912 simulated cyclone.
      
Chapter three provides an overview of general issues in the P2P area.
      
It was used to pre pare a national report on the implementation of the MDGs.
      
In determining sensitivity, the beam was scanned over an 8p X 37p area with the line frequency adjusted so that the line detail was not resolved.
      
更多          
  p-region
An important experimental result is that the slope of exponential current-voltage (I-V) characteristic (in lnI-V coordinates) is independent of the width of the space-charge region, i.e., on n-and p-region doping levels.
      
Silicon photodiodes with a grid-structured p-region were studied.
      
An increase in the p-region width from 100 to 200 μm makes the velocity of the excess plasma front propagating in the p-region in the reverse pumping stage higher by a factor of 5-7.
      
The longwave luminescence band is due to radiative recombination in the p-region of the p-n junction.
      
The drift velocities in N2 were measured in theE/p-region between 34 and 49 V/cm·Torr, in CH4 between 30 and 35 V/cm·Torr and in N2+CH4 between 33,5 and 42 V/cm·Torr.
      
更多          
  p-block elements
For the p-block elements, the ns and np shells together with the (n-1)d shell make up the valence space.
      
The successive periods ofs- and p-block elements appeared in an ovalconfiguration, with d-block elements lying to one side.
      
Figure 1compares the periodic trend p-block elements of that row.
      
  其他


There is a drift field at the back contact of BSF cell created by heavy doping. For example, n+/p/p+, p/p+ junction is also a so-called "high-low" junction which behaves as a membrane permitting the passage of majors and reflecting the minors. Because of that, the boundary conditions of continuity equation are different from those of conventional cells. The junction and reverse currents are then deduced. The conclusions are as following: the junctien current of BSF cell is always greater than that of conventional...

There is a drift field at the back contact of BSF cell created by heavy doping. For example, n+/p/p+, p/p+ junction is also a so-called "high-low" junction which behaves as a membrane permitting the passage of majors and reflecting the minors. Because of that, the boundary conditions of continuity equation are different from those of conventional cells. The junction and reverse currents are then deduced. The conclusions are as following: the junctien current of BSF cell is always greater than that of conventional cells if they have the same thickness and minor diffusion length, the junction current will decrease while the reverse increase with the increasement of thickness if the minor diffusion length is decided; the junction current will increase while the reverse are decrease with the increasement of minor diffusion length if the minor diffusion length always equal to the thickness.Thus the decision of BSF cell thickness must make it equal to the minor diffusion length.

背电场电池在背接触处以高掺杂造成一漂移场。以n~+/p/p~+为例,p/p~+即所谓“高低结”,它是一种半透膜,允许多子通过而拒斥少子。它的存在使得p区的连续方程边界条件不同于普通电池。本文根据这些边界条件求得背电场电池的结电流和反向电流,并得到如下结论:背电场电池之结电流总大于普通电池(电池厚度、少子扩散长度等参数一样);少子扩散长度一定时,背电场电池厚度的增加使结电流减小,反向电流增加,从而使开路电压降低;如背电场电池少子扩散长度随电池厚度增加而增加,则结电流增大而反向电流降低。 背电场电池厚度的选择准则是厚度与少子扩散长度相等。

In the present paper, precipitation phase changes in single crystal of lead molybdateare being discussed for the first time.Morphology and space distribution of precipitatedphases have been investigated.The typical precipitated phase was found to be of wafer-form (plate-shaped) consisting of a blue-greenish center with two transparent side flankslying on{101}face.The precipitation process under high temperature first underwent threesuccessive stages, by the order of scattering centers with sizes of some hundred...

In the present paper, precipitation phase changes in single crystal of lead molybdateare being discussed for the first time.Morphology and space distribution of precipitatedphases have been investigated.The typical precipitated phase was found to be of wafer-form (plate-shaped) consisting of a blue-greenish center with two transparent side flankslying on{101}face.The precipitation process under high temperature first underwent threesuccessive stages, by the order of scattering centers with sizes of some hundred or thou-sand A, "spot-form" phases of 1 μm size and the typical wafer-form phases.After whichif subjected continuously to high temperature the more complex diffussion phase changeswill then take place.The precipitation process causes orientated reflection and scatteringof laser and small angle scattering and two-dimensinal diffraction of X-ray.The chemicalcomposition of the precipitated phase indicates it to be a metastable non-stoichiometricphase (particularly at its transparent region) .The micromechanism of precipitation phasechanges in the single crystal of lead molybdate under high temperature is presumably en-visaged to be as follows: The collection of Mo (O) vacancies and Pb interstitial ions on{101}lattice faces is followed by their diffusion along α-or b-axis, and reorientated toform lead-rich and lead-poor "G-P" zones, as the result of which, the precipitated pha-ses grow gradually into typical wafer-form.

本文首次讨论了钼酸铅晶体的脱溶相变。查明了脱溶相的形态特征和空间分布。在钼酸铅晶体中,典型的脱溶相呈薄片状,它由淡蓝绿色中心和两侧透明区两部分组成,平躺在{101}晶面上。在高温下脱溶过程有三个发展阶段:数百A至数千A的散射中心;μm级“点状”,相和典型的薄片相;而后继续处在高温时,将发生更为复杂的扩散相变。脱溶相引起激光的方向性散射和反射及X射线的小角散射和二维衍射。脱溶相的化学组成表明它们(特别是透明区)是一个亚稳的非化学计量相。最后,粗略地提出了钼酸铅晶体脱溶相变的微观机理:在高温下Mo(O)空位和Pb填隙离子在晶体的{101}点阵面上富集,沿α、b轴扩散,重排,形成富铅和贫铅“G-P”区,并逐渐发展成典型的薄片状脱溶相。

This paper illustrates the physical essence transferred for the Collector Junction from reverse bias to forward bias. A new view in the analysis of dynamics process is introduced for the nonneutral maJority carriers. The conclusion is as follows. 1) Jf only at the p-n Junction on both sides appear non-neutral maJority carriers (namely, in p renion are shown up non-neutral holes, in n region non-neutral electrons) the p-n Junction will certainly become narrow. On the contrary, if at 1he p-n Junction on both sides...

This paper illustrates the physical essence transferred for the Collector Junction from reverse bias to forward bias. A new view in the analysis of dynamics process is introduced for the nonneutral maJority carriers. The conclusion is as follows. 1) Jf only at the p-n Junction on both sides appear non-neutral maJority carriers (namely, in p renion are shown up non-neutral holes, in n region non-neutral electrons) the p-n Junction will certainly become narrow. On the contrary, if at 1he p-n Junction on both sides appear non-neutral minority carriers, the p-n Junction will certainly become broad. 2)The state of electroneutrality of p and n regions is the stable condition of the breadth of p-n Junction.

本文简述了晶体管作开关运用时集电结由反偏状态向正偏状态转化的物理本质。在动态过程的分析中引入了非中性多子和非中性少子的新提法。得出如下结论:1.只要PN结两侧出现非中性多子(即户区出现呈现非中性状态的空穴,N区出现呈现非中性状态的电子)PN结就必然由宽变窄。反之,如PN结两侧出现非中性少子则PN结就必然由窄变宽。2.P区和N区的电中性状态是PN结宽度的稳定条件。

 
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