This paper ascertains that valid recombination center level to cause in si-wafer respectively is Ec-0.54ev、Ev+0.42ev、Ec-0.42ev、Ev+0.45ev by the measurement and the analysis of DLTS for experimental sample of doping Au、doping pt、electron irradiation、r-irradiation.
本文通过对掺 Au、掺 Pt、电子辐照、γ射线辐照实验样片的 DLTS 测量、分析,确定它们在 N 型硅片中产生的有效复合中心能级分别为 E_(c-0.54ev)E_(v+0.42ev)、E_(c-0.42ev)、E_(v+0.45ev)。
Stored in air ambience, the Cd(OH) 2 in the surface layer reacts further with CO 2 to produce CdCO 3· x H 2O and the accumulation of - 2 in the surface layer takes place. The - 2 can play the role of recombination center for photogenerated e - and h +, leadint to the decrease of the photocatalytic activity of Pt/CdS(T).
在 储存过程中，表 面层中的 Cd（ O H） 2 进 一 步与 空 气 中的 C O2 反 应生 成 Cd C O3 ， 并 有 ⒒ O－2 在表 面 层 中积累． ⒒ O －2 可起e － C B和 h ＋ V B复 合中心 的作用，导 致 Pt／ Cd S（ T） 光催化 活性的降 低
The change of sensitivity properties of the emulsion doped can probably be explained by the following two reasons: (1) Pb2+ ions act as deep traps, greatly decreasing photoconductivity of the emulsion microcrystals. (2) Pb2+ (or PbBr2) functions as a recombination center and catalyze the development, increasing fog formation.
The variations of defect concentration Nj- are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-N? 1 graph.
In this paper,the steady-stale photoluminescence,transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported. The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed.
Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80￣110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels. Results show that E 3 and E 4 levels are moninly recombination centers.
Bulk lifetime of mc-Si increases in N_2 and O_2 ambient at 850,950,and 1150℃,and the lifetime of mc-Si wafers annealed in O_2 are higher than those annealed in N_2,which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers.
Finally, a novel structure of“Amorphous-Polycrystalline/Nanocrystalline”, (Si/Ge)xZnO thin films, has been fabricated successfully by combing Magnetron Sputtering and Thermal Annealing technologies. Features of film morphology, interfaces, microstructure, crystallization behaviors and optical properties have been investigated, which illustrates that nanocrystals of Ge has direct energy band gap in our experiment, and Si-based multilayers with broad wavelength absorption of visible light, high intersity of photoluminescence and low density of defect recombination centers has been developed.
This is attributed to the fact that the sodium ions produce recombination centers of photo-generated electron-hole pairs on the surface and in the interior region of TiO2 particles, since the sodium and calcium ions easily diffuse from the soda lime glass substrate into TiO2 thin films during the heat treatment.
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
It is shown that a novel radiative recombination center is formed in these layers.
We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre.
Better consistency in the interpretation of the results has been found in the doping range 1014-1016 cm-3 supposing theEc -0.3 eV level as predominant recombination centre.
An approximative evaluation of the results showed that the position of the energy level of the recombination centre produced by irradiation lies near to the upper edge of the valence band or the lower edge of the conduction band.
The present paper shows that a recombination centre of the Cu+-[S-] type in the ZnS lattice has "local" piezoelectric properties.
In inert electrolyte the interaction with the van der Waals surface leads to a decrease in decomposition-photocurrents due to the action of cysteine as a recombination centre for charge carriers.
After high temperature air treatment for a short time, a layer of oxide CdO Cd(OH) 2 was formed on the surface of CdS(T). Stored in air ambience, the Cd(OH) 2 in the surface layer reacts further with CO 2 to produce CdCO 3· x H 2O and the accumulation of - 2 in the surface layer takes place. The - 2 can play the role of recombination center for photogenerated e - and h +, leadint to the decrease of the photocatalytic activity of Pt/CdS(T).
The new round of eastward expansions of NATO and EU, which are taking place, has highlighted a new European security framework. In sharp contrast with the structure of balance of power and bipo-larity in European history, the new security is structured on two circles that intersect but not overlap with NATO and EU as the two cores. The circle of NATO plays the role of military security while the circle of EU functions as anchor of security to play the role of "soft security" . The two security cores have different...
The new round of eastward expansions of NATO and EU, which are taking place, has highlighted a new European security framework. In sharp contrast with the structure of balance of power and bipo-larity in European history, the new security is structured on two circles that intersect but not overlap with NATO and EU as the two cores. The circle of NATO plays the role of military security while the circle of EU functions as anchor of security to play the role of "soft security" . The two security cores have different responsibilities, and their inter-relationships are highly institutionalized and organized with high degree of cohesion and stability. The two cores are linked with peripheral states with institutionalized multilateral cooperative mechanisms, but there is a hierarchical difference between the core and periphery. The structure is open-ended and expandable. Factors of regulation play an important role during the process of expansion. The two circular security structures pose three fold pressure to Eurasia from the east and west-the pressure from power, from system and from culture.