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  recombination center
     A Study of Surface-Site/Recombination Center Model for Electrolyte-Insulator(Si_3N_4)Interface
     电解液-Si_3N_4绝缘体界面表面基/复合中心模型的研究
短句来源
     This paper ascertains that valid recombination center level to cause in si-wafer respectively is Ec-0.54ev、Ev+0.42ev、Ec-0.42ev、Ev+0.45ev by the measurement and the analysis of DLTS for experimental sample of doping Au、doping pt、electron irradiation、r-irradiation.
     本文通过对掺 Au、掺 Pt、电子辐照、γ射线辐照实验样片的 DLTS 测量、分析,确定它们在 N 型硅片中产生的有效复合中心能级分别为 E_(c-0.54ev)E_(v+0.42ev)、E_(c-0.42ev)、E_(v+0.45ev)。
短句来源
     As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center.
     辐照后的硅少子寿命主要由E_4和E_3共同控制,在E_2,E_4退火基本消失后,E_3缺陷将为主要的复合中心
短句来源
     Stored in air ambience, the Cd(OH) 2 in the surface layer reacts further with CO 2 to produce CdCO 3· x H 2O and the accumulation of - 2 in the surface layer takes place. The - 2 can play the role of recombination center for photogenerated e - and h +, leadint to the decrease of the photocatalytic activity of Pt/CdS(T).
     在 储存过程中,表 面层中的 Cd( O H) 2 进 一 步与 空 气 中的 C O2 反 应生 成 Cd C O3 , 并 有 ⒒ O-2 在表 面 层 中积累. ⒒ O -2 可起e - C B和 h + V B复 合中心 的作用,导 致 Pt/ Cd S( T) 光催化 活性的降 低
短句来源
     The change of sensitivity properties of the emulsion doped can probably be explained by the following two reasons: (1) Pb2+ ions act as deep traps, greatly decreasing photoconductivity of the emulsion microcrystals. (2) Pb2+ (or PbBr2) functions as a recombination center and catalyze the development, increasing fog formation.
     上述结果暗示:Pb~(2+)对照相性能的影响不是由于乳剂微晶大小和形状的变化,可能由以下两个原因引起:(1)Pb~(2+)起了深的电子陷阱作用,使光电子徙动路程缩短,影响潜影的形成效率,(2)Pb~(2+)(或PbBr_2)成为复合中心,加速光电子与空穴的复合,催化显影过程。
短句来源
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  recombination centre
     Study of Recombination Centre Levels In N-Type LPE GaAs Layers Irradiated by Electrons
     电子辐照N型LPE-GaAs层中复合中心能级的研究
短句来源
     It is also shown that the main recombination centre level amongall the defect levels can be effectively identified by using Shockley-Read-Hall formula.
     同时通过对Shockley-Read-Hall公式的简化提出了一个在诸多缺陷能级中判别出其中主要复合中心能级的方法,实验结果也证实了这种判别方法是行之有效的。
短句来源
     The variations of defect concentration Nj- are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-N? 1 graph.
     讨论了随辐照剂量逐次增大及等时退火后缺陷浓度N_T的变化,以及根据L~2/D对N_T~(-1)作图来判别电照引入的“E”缺陷能级中对少子寿命起主要控制作用的复合中心能级.
短句来源
     In this paper,the steady-stale photoluminescence,transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported. The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed.
     本文报道了铜-多孔硅的稳态光致发光,瞬态光致发光和傅里叶变换红外光谱的研究,讨论了铜在多孔硅表面吸附产生的表面电子态所起的非辐射复合中心的作用。
短句来源
  recombination centers
     Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80 ̄110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels. Results show that E 3 and E 4 levels are moninly recombination centers.
     本文研究了高阻(80~110Ω·cm)NTD-FZ-Si-P+n结中经电子辐照缺陷态在真空条件下的等时、等温退火特性,获得了5个缺陷能级,结果表明其中E3,E4能级是主要的复合中心
短句来源
     Bulk lifetime of mc-Si increases in N_2 and O_2 ambient at 850,950,and 1150℃,and the lifetime of mc-Si wafers annealed in O_2 are higher than those annealed in N_2,which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers.
     多晶硅片在N2和O2环境下,850、950和1150℃下退火,少子寿命都有很大提高,并且在O2中退火比N2中退火少子寿命上升得更多,可能由于在高温退火时大量杂质扩散到晶界处,减少了复合中心.
短句来源
     Based on the optical-electric behavior of transition impurities Mo and Pd in GaAs, it is suggested that these impurities do not act as effective recombination centers in GaAs.
     根据过渡杂质Mo和Pd在GaAs中的光电行为,推测这些杂质在GaAs中不起有效复合中心的作用。
短句来源
     Finally, a novel structure of“Amorphous-Polycrystalline/Nanocrystalline”, (Si/Ge)xZnO thin films, has been fabricated successfully by combing Magnetron Sputtering and Thermal Annealing technologies. Features of film morphology, interfaces, microstructure, crystallization behaviors and optical properties have been investigated, which illustrates that nanocrystals of Ge has direct energy band gap in our experiment, and Si-based multilayers with broad wavelength absorption of visible light, high intersity of photoluminescence and low density of defect recombination centers has been developed.
     最终,对磁控溅射技术和气氛热处理工艺相结合的方法制备出的“非晶-多晶/纳米晶”结构的(Si/Ge)xZnO薄膜的表面,界面,微观组织结构,结晶特征,光吸收性能和光致发光特征进行了研究,证明了此条件下Ge纳米晶已经具备了直接带隙材料的特征,并研制出具有宽吸收带、高发光强度和低缺陷复合中心密度的新型Si基多层结构薄膜。
短句来源
     This is attributed to the fact that the sodium ions produce recombination centers of photo-generated electron-hole pairs on the surface and in the interior region of TiO2 particles, since the sodium and calcium ions easily diffuse from the soda lime glass substrate into TiO2 thin films during the heat treatment.
     研究结果表明:在热处理过程中钠钙离子容易从玻璃基体扩散到TiO_2薄膜内,在TiO_2颗粒表面和本体形成光生电子和空穴的复合中心,同时抑制具有光催化活性的锐钛矿相TiO_2的形成。
短句来源
更多       
  recombination centres
     RECOMBINATION CENTRES IN n TYPE Hg 1- x Cd x Te
     n-Hg_(1-x)Cd_xTe中复合中心
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  recombination center
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
      
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
      
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
      
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
      
It is shown that a novel radiative recombination center is formed in these layers.
      
更多          
  recombination centre
We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre.
      
Better consistency in the interpretation of the results has been found in the doping range 1014-1016 cm-3 supposing theEc -0.3 eV level as predominant recombination centre.
      
An approximative evaluation of the results showed that the position of the energy level of the recombination centre produced by irradiation lies near to the upper edge of the valence band or the lower edge of the conduction band.
      
The present paper shows that a recombination centre of the Cu+-[S-] type in the ZnS lattice has "local" piezoelectric properties.
      
In inert electrolyte the interaction with the van der Waals surface leads to a decrease in decomposition-photocurrents due to the action of cysteine as a recombination centre for charge carriers.
      
更多          
  recombination centers
It is shown that the use of the low-frequency discharge makes it possible to independently control the stability and concentration of recombination centers in a-Si.
      
Giant burst of photoconductivity in semiconductors upon an increase in the concentration of recombination centers
      
The maximum recombination rate for the highest excitation level is found to be Vpmax = 109 s-1 and the surface concentration of recombination centers is determined to be Nr = (2 ± 0.5) × 1011 cm-2.
      
We propose a model that allows us to explain the observed effects starting from the assumption that photoexcitations drift toward radiative recombination centers.
      
This effect is due to the overlap of the wave functions of recombination centers and a decrease in the activation energy of separation of genetic electron-hole pairs.
      
更多          
  recombination centres
The scattering and recombination centres were found to have a different influence at different time intervals of the transients (from 10 ns to some seconds).
      
It is shown that these defects are accumulations of non-radiative recombination centres around dislocations.
      
These treatments may also introduce defects that act as recombination centres for charge carriers in the solar cell device.
      
On the determination of the position of the energy level of surface recombination centres
      
Characteristic parameters of recombination centres
      
更多          
  其他


After high temperature air treatment for a short time, a layer of oxide CdO Cd(OH) 2 was formed on the surface of CdS(T). Stored in air ambience, the Cd(OH) 2 in the surface layer reacts further with CO 2 to produce CdCO 3· x H 2O and the accumulation of - 2 in the surface layer takes place. The - 2 can play the role of recombination center for photogenerated e - and h +, leadint to the decrease of the photocatalytic activity of Pt/CdS(T).

Pt/ Cd S 经 短时间 高温空气 处理后 , Cd S 表面 覆盖有 一层氧化 物( Cd O Cd( O H) 2) ; 在 储存过程中,表 面层中的 Cd( O H) 2 进 一 步与 空 气 中的 C O2 反 应生 成 Cd C O3 , 并 有 ⒒ O-2 在表 面 层 中积累. ⒒ O -2 可起e - C B和 h + V B复 合中心 的作用,导 致 Pt/ Cd S( T) 光催化 活性的降 低

The new round of eastward expansions of NATO and EU, which are taking place, has highlighted a new European security framework. In sharp contrast with the structure of balance of power and bipo-larity in European history, the new security is structured on two circles that intersect but not overlap with NATO and EU as the two cores. The circle of NATO plays the role of military security while the circle of EU functions as anchor of security to play the role of "soft security" . The two security cores have different...

The new round of eastward expansions of NATO and EU, which are taking place, has highlighted a new European security framework. In sharp contrast with the structure of balance of power and bipo-larity in European history, the new security is structured on two circles that intersect but not overlap with NATO and EU as the two cores. The circle of NATO plays the role of military security while the circle of EU functions as anchor of security to play the role of "soft security" . The two security cores have different responsibilities, and their inter-relationships are highly institutionalized and organized with high degree of cohesion and stability. The two cores are linked with peripheral states with institutionalized multilateral cooperative mechanisms, but there is a hierarchical difference between the core and periphery. The structure is open-ended and expandable. Factors of regulation play an important role during the process of expansion. The two circular security structures pose three fold pressure to Eurasia from the east and west-the pressure from power, from system and from culture.

随着北约、欧盟新一轮东扩的即将启动,欧洲新的安全结构愈益凸显出来。这个新结构完全不同于欧洲历史上的均势和两极结构,而是一种复合中心圆结构。它是以北约和欧盟为核心的两个交叠但不重合的中心圆,北约中心圆发挥的作用以军事安全为主,欧盟中心圆作为“安全锚地”发挥“软安全”作用。这两个职责不同的安全核心,其内部关系高度民主制度化和组织化,聚合程度高,稳定性强。核心通过制度化的多边合作机制联系着周边国家,但从核心到边缘存在着等级区别。结构具有开放性和扩张性特点,在扩张过程中规范因素发挥了重要的作用。复合中心圆结构对欧亚大陆自西向东构成三种压力:力量压力、制度压力和文化压力。

 
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