When the ZnO nanoparticles are capped with PVB, PVB molecules do not only improve the surface of ZnO nanoparticles by compensating dangling bonds and unsaturated bonds, but also spatially block the process of surface-trapped hole tunneling back into the particles to form VO** recombination center.
Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80￣110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels. Results show that E 3 and E 4 levels are moninly recombination centers.
The input parameters are doping profile, SRH coefficients of recombination centers and geometric parameters of pn junction. The program can provide pn junction ac and do characteristics and inner information such as density of carriers. The experiments show that the simulation results agree quite well with one of the
3 shows that the forward threshold voltage and reverse breakdown voltage of GaAS1-xPx LED are decreased after degradation. This means that p-n junction is damaged and the leakage current is increased with degradation. This may be one of the reasons for the reducing of LED luminous efficiency.
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
It is shown that a novel radiative recombination center is formed in these layers.