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复合中心
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  recombination center
    As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center.
    辐照后的硅少子寿命主要由E_4和E_3共同控制,在E_2,E_4退火基本消失后,E_3缺陷将为主要的复合中心
短句来源
    A SIMPLE ANALYSIS OF THE DEPENDENCE OF TRAP AND RECOMBINATION CENTER ON THE LEVEL POSITION
    浅析陷阱和复合中心与能级位置的关系
短句来源
    When the ZnO nanoparticles are capped with PVB, PVB molecules do not only improve the surface of ZnO nanoparticles by compensating dangling bonds and unsaturated bonds, but also spatially block the process of surface-trapped hole tunneling back into the particles to form VO** recombination center.
    实验结果表明:经PVB包覆后,PVB不仅减少了ZnO纳米粒子表面的悬键和非饱和键,而且也从空间上阻断了被表面俘获的空穴遂穿回粒子内部形成VO**复合中心
短句来源
    According to the theory of one-level recombination center, a simple analysis of the relations between the trap recombination center and the level position is given.
    利用单一能级复合中心理论,分析了杂质和缺陷作为陷阱和复合中心与能级位置的依赖关系.
短句来源
    The deep electron traps accelerated the electron decay because of the strong bonding or deep elec- tron trap as recombination center.
    而深电子陷阱由于对光电子形成强束缚或作为复合中心加速了光电子的衰减。
短句来源
  recombination centers
    Made some scientific research on the electronic radiation defect states isochronal and isothermal anneling characteristic properties of high resistance (80 ̄110Ω·cm) NTD FZ Si P +n in vacuum,and obtain five defect energy evels. Results show that E 3 and E 4 levels are moninly recombination centers.
    本文研究了高阻(80~110Ω·cm)NTD-FZ-Si-P+n结中经电子辐照缺陷态在真空条件下的等时、等温退火特性,获得了5个缺陷能级,结果表明其中E3,E4能级是主要的复合中心
短句来源
    RELAXATION PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES WITH MODULATEDLY DISTRIBUTED RECOMBINATION CENTERS
    具有调制分布复合中心的非晶半导体超晶格中载流子的弛豫过程
短句来源
    Luminescence and Recombination Centers in ZnO/Si Films
    硅基氧化锌薄膜中的发光和复合中心
短句来源
    The input parameters are doping profile, SRH coefficients of recombination centers and geometric parameters of pn junction. The program can provide pn junction ac and do characteristics and inner information such as density of carriers. The experiments show that the simulation results agree quite well with one of the
    程序所用的输入为pn结的杂质分布、复合中心的SRH系数和几何参数,输出该pn结交、直流特性及其载流子分布等内部信息,实验结果表明模拟和实测符合得比较好.
短句来源
    The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation.
    我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移,由氧化作用产生的非辐射复合中心导致光致发光效率的下降。
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  “复合中心”译为未确定词的双语例句
    This paper analyzes, with single energy-level recombination-centre model, the phase-shift lifetime of excess carriers in semiconductors under sinusoidal injection.
    本文用单能级复合中心模型,分析了半导体中正弦式注入下过剩载流子的相移寿命与复合中心参数的关系,由此得出了相移寿命与稳态寿命和瞬态寿命的异同:(1)相移寿命与注入频率有关,随频率的增高而减小。
短句来源
    The experimental results show that the coupling between Er 3+ , nc Si and nonradiative centers has a great influence on photoluminescence from nc Si/SiO 2 films.
    nc Si颗粒附近其他非辐射复合中心的存在会降低Er3+ 被激发的概率 ,引起 1.5 4 μm处的发光强度降低 .
短句来源
    Moreover,the intensity of the PL spectra decreases while the relative density of E_2 increases,showing that E_2 has the properties of a nonradiative center.
    此外,实验揭示E2能级的相对隙态密度与PL谱的发光强度成反比,表明深能级E2具有复合中心性质.
短句来源
    It is found that increasing bonded hydrogen centent results in a systematic increase of the photoluminescence peak intensity, peak energy, linewidth, Stokes shift, and thermal quenching.
    实验发现键合氢含量的增加导致光致发光峰强度、发光峰能量、发光带半宽度、Stokes位移和热淬灭的增大。 由此导出:(1)键合氢不仅能消除无辐射复合中心,而且能产生辐射复合中心;
短句来源
    3 shows that the forward threshold voltage and reverse breakdown voltage of GaAS1-xPx LED are decreased after degradation. This means that p-n junction is damaged and the leakage current is increased with degradation. This may be one of the reasons for the reducing of LED luminous efficiency.
    认为△E_(n1)与△E_(n2)对GaAs_(1-x)P_x LED的发光效率与退化特性无影响,而△E_(n3)是限制GaAs_(1-x)P_x LED发光效率和退化特性的有效复合中心
短句来源
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  recombination center
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
      
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
      
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
      
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
      
It is shown that a novel radiative recombination center is formed in these layers.
      
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  recombination centers
It is shown that the use of the low-frequency discharge makes it possible to independently control the stability and concentration of recombination centers in a-Si.
      
Giant burst of photoconductivity in semiconductors upon an increase in the concentration of recombination centers
      
The maximum recombination rate for the highest excitation level is found to be Vpmax = 109 s-1 and the surface concentration of recombination centers is determined to be Nr = (2 ± 0.5) × 1011 cm-2.
      
We propose a model that allows us to explain the observed effects starting from the assumption that photoexcitations drift toward radiative recombination centers.
      
This effect is due to the overlap of the wave functions of recombination centers and a decrease in the activation energy of separation of genetic electron-hole pairs.
      
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