This paper ascertains that valid recombination center level to cause in si-wafer respectively is Ec-0.54ev、Ev+0.42ev、Ec-0.42ev、Ev+0.45ev by the measurement and the analysis of DLTS for experimental sample of doping Au、doping pt、electron irradiation、r-irradiation.
本文通过对掺 Au、掺 Pt、电子辐照、γ射线辐照实验样片的 DLTS 测量、分析,确定它们在 N 型硅片中产生的有效复合中心能级分别为 E_(c-0.54ev)E_(v+0.42ev)、E_(c-0.42ev)、E_(v+0.45ev)。
The variations of defect concentration Nj- are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-N? 1 graph.
In this paper,the steady-stale photoluminescence,transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported. The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed.
Bulk lifetime of mc-Si increases in N_2 and O_2 ambient at 850,950,and 1150℃,and the lifetime of mc-Si wafers annealed in O_2 are higher than those annealed in N_2,which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers.
The map of lifetime versus position at 300K, 90K are obtained by light spotscanning. It is suggested that the variations in lifetime across the wafer are due to the varia-tions in net donor concentrations,or density of recombination centers.
The total number of defects induced by electron irradiation in 4H-SiC is calculated theoretically. The deep level defect of EH6/EH7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps.
On the one hand,the separation of carriers and theircombination centers by the inner periodic field is taken into account in the calculation,on theother hand, the many-body screening effect of carriers on this field and the influence of the dif-ferent combination mechanisms and of the long-time-tail behavior,characteristic of amorphousmaterials,on the photoconductivity are also considered.
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
It is shown that a novel radiative recombination center is formed in these layers.
We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre.
Better consistency in the interpretation of the results has been found in the doping range 1014-1016 cm-3 supposing theEc -0.3 eV level as predominant recombination centre.
An approximative evaluation of the results showed that the position of the energy level of the recombination centre produced by irradiation lies near to the upper edge of the valence band or the lower edge of the conduction band.
The present paper shows that a recombination centre of the Cu+-[S-] type in the ZnS lattice has "local" piezoelectric properties.
In inert electrolyte the interaction with the van der Waals surface leads to a decrease in decomposition-photocurrents due to the action of cysteine as a recombination centre for charge carriers.