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   复合中心 在 无线电电子学 分类中 的翻译结果: 查询用时:0.037秒
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复合中心
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  recombination center
    This paper ascertains that valid recombination center level to cause in si-wafer respectively is Ec-0.54ev、Ev+0.42ev、Ec-0.42ev、Ev+0.45ev by the measurement and the analysis of DLTS for experimental sample of doping Au、doping pt、electron irradiation、r-irradiation.
    本文通过对掺 Au、掺 Pt、电子辐照、γ射线辐照实验样片的 DLTS 测量、分析,确定它们在 N 型硅片中产生的有效复合中心能级分别为 E_(c-0.54ev)E_(v+0.42ev)、E_(c-0.42ev)、E_(v+0.45ev)。
短句来源
    The surface states play two different roles for the photoinduced carriers, one is surface recombination center, the other is surface active centers.
    荧光光谱研究表明TiO_2的表面态起着两种不同作用,一为表面复合中心,二为光催化反应活性中心。
短句来源
    Prolonged exposure not only increased new recombination center but also changed the capture cross section of original recombination centers.
    延长曝光不仅增加新的复合中心,还改变原有复合中心的俘获截面。
短句来源
    In this paper,the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.
    探讨了快恢复二极管制造过程中, 选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
短句来源
  recombination centre
    Study of Recombination Centre Levels In N-Type LPE GaAs Layers Irradiated by Electrons
    电子辐照N型LPE-GaAs层中复合中心能级的研究
短句来源
    It is also shown that the main recombination centre level amongall the defect levels can be effectively identified by using Shockley-Read-Hall formula.
    同时通过对Shockley-Read-Hall公式的简化提出了一个在诸多缺陷能级中判别出其中主要复合中心能级的方法,实验结果也证实了这种判别方法是行之有效的。
短句来源
    The variations of defect concentration Nj- are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-N? 1 graph.
    讨论了随辐照剂量逐次增大及等时退火后缺陷浓度N_T的变化,以及根据L~2/D对N_T~(-1)作图来判别电照引入的“E”缺陷能级中对少子寿命起主要控制作用的复合中心能级.
短句来源
    In this paper,the steady-stale photoluminescence,transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported. The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed.
    本文报道了铜-多孔硅的稳态光致发光,瞬态光致发光和傅里叶变换红外光谱的研究,讨论了铜在多孔硅表面吸附产生的表面电子态所起的非辐射复合中心的作用。
短句来源
  recombination centers
    Bulk lifetime of mc-Si increases in N_2 and O_2 ambient at 850,950,and 1150℃,and the lifetime of mc-Si wafers annealed in O_2 are higher than those annealed in N_2,which shows that a lot of impurities in mc-Si at high temperature annealing diffuse to grain boundaries,greatly reducing recombination centers.
    多晶硅片在N2和O2环境下,850、950和1150℃下退火,少子寿命都有很大提高,并且在O2中退火比N2中退火少子寿命上升得更多,可能由于在高温退火时大量杂质扩散到晶界处,减少了复合中心.
短句来源
    A SPECULATION ABOUT THE NATURE OF RECOMBINATION CENTERS IN InSb
    InSb中复合中心本性的推测
短句来源
    The map of lifetime versus position at 300K, 90K are obtained by light spotscanning. It is suggested that the variations in lifetime across the wafer are due to the varia-tions in net donor concentrations,or density of recombination centers.
    通过光点扫描,在300K、90K温度下得到了载流子寿命的面分布,认为寿命随位置的变化是由样品的净施主浓度或复合中心密度的起伏造成的.
短句来源
    Prolonged exposure not only increased new recombination center but also changed the capture cross section of original recombination centers.
    延长曝光不仅增加新的复合中心,还改变原有复合中心的俘获截面。
短句来源
    Based on the optical-electric behavior of transition impurities Mo and Pd in GaAs, it is suggested that these impurities do not act as effective recombination centers in GaAs.
    根据过渡杂质Mo和Pd在GaAs中的光电行为,推测这些杂质在GaAs中不起有效复合中心的作用。
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  “复合中心”译为未确定词的双语例句
    The total number of defects induced by electron irradiation in 4H-SiC is calculated theoretically. The deep level defect of EH6/EH7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps.
    从理论上对电子辐照在4H-SiC中引入的缺陷数量和各种缺陷能级进行了计算和分析,其中只有EH6/EH7缺陷能级在SiC中起着有效的复合中心的作用。
短句来源
    The PL intensity at 450℃ increases as compared with that of the as-grown CZ-Si and the thermallyinduced defects increase nonradiative carrier-recombination centers.
    在450℃时,光致发光强度增强,热缺陷减少了非辐射复合中心
短句来源
    The PL intensity decreases beyond 550℃ and the thermally-induced defects increase the nonradiative carrier-recombination centers.
    高于550℃时,光致发光强度减弱,热缺陷增加了非辐射复合中心
短句来源
    This phenomenon may be explained from that the increase in defect statedensity due to phosphorous impurity results in the increase in non-radiation recombinationcenters.
    该现象可解释为因引入磷杂质扩大了缺陷态密度而带来了非辐射复合中心数增多。
短句来源
    On the one hand,the separation of carriers and theircombination centers by the inner periodic field is taken into account in the calculation,on theother hand, the many-body screening effect of carriers on this field and the influence of the dif-ferent combination mechanisms and of the long-time-tail behavior,characteristic of amorphousmaterials,on the photoconductivity are also considered.
    在计算过程中一方面考虑到周期性内电场对载流子与其复合中心的空间分离作用,另一方面也考虑到载流子本身对这个内电场的多体屏蔽效应,以及载流子的不同复合机制和非晶态物质所固有的长时尾行为对瞬态光电导的影响.
短句来源
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  recombination center
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
      
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
      
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
      
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
      
It is shown that a novel radiative recombination center is formed in these layers.
      
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  recombination centre
We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atEv +0.1 eV and the donor level of FeB pairs atEc -0.3 eV as recombination centre.
      
Better consistency in the interpretation of the results has been found in the doping range 1014-1016 cm-3 supposing theEc -0.3 eV level as predominant recombination centre.
      
An approximative evaluation of the results showed that the position of the energy level of the recombination centre produced by irradiation lies near to the upper edge of the valence band or the lower edge of the conduction band.
      
The present paper shows that a recombination centre of the Cu+-[S-] type in the ZnS lattice has "local" piezoelectric properties.
      
In inert electrolyte the interaction with the van der Waals surface leads to a decrease in decomposition-photocurrents due to the action of cysteine as a recombination centre for charge carriers.
      
更多          
  recombination centers
It is shown that the use of the low-frequency discharge makes it possible to independently control the stability and concentration of recombination centers in a-Si.
      
Giant burst of photoconductivity in semiconductors upon an increase in the concentration of recombination centers
      
The maximum recombination rate for the highest excitation level is found to be Vpmax = 109 s-1 and the surface concentration of recombination centers is determined to be Nr = (2 ± 0.5) × 1011 cm-2.
      
We propose a model that allows us to explain the observed effects starting from the assumption that photoexcitations drift toward radiative recombination centers.
      
This effect is due to the overlap of the wave functions of recombination centers and a decrease in the activation energy of separation of genetic electron-hole pairs.
      
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