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金刚石膜的     
相关语句
  diamond films
     Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films
     C-H-O和C-H-N体系生长金刚石膜的气相化学模拟
短句来源
     The Piezoresistances and its Temperature Characteristic of CVD Diamond Films
     CVD金刚石膜的压阻及其温度特性
短句来源
     Study on Raman spectroscopy of diamond films
     金刚石膜的拉曼光谱研究
短句来源
     Vacancy defects of (001) polycrystalline diamond films eliminated by hydrogen and boron ions bombardment
     氢和硼离子轰击可消除(001)面多晶金刚石膜的空位缺陷(英文)
短句来源
     Diamond films of up to 1.1 mm thickness and 20 cm~(2) area were grown in a self-made microwave chemical vapor deposition(MWCVD) reactor using H_(2)/ CH_(4) /H_(2)O gas mixtures.
     用自制的微波功率为5千瓦的微波等离子体(MWCVD)装置,研究了在CH4-H2反应气体中添加安全廉价的H2O代替O2金刚石膜的沉积状况,以H2/CH4/H2O作为反应气体,成功制备了厚度达到1.1毫米,面积达20平方厘米的金刚石厚膜。
短句来源
更多       
  diamond film
     The influences of the nucleation and growth of diamond film were studied on the following conditions: CH_4/H_2=1%~5%. substrate temperature form 700℃ -880 ℃. bias-voltage form 0V-400V, pressure form 1kpa~5kpa.
     本文主要研究了在CH_4/H_2=1%~5%,基体温度为700℃~880℃,偏压为OV~400V,沉积气压为1kPa~5kPa等一系列实验条件下金刚石膜的形核与生长。
短句来源
     Refractive index and extinction coefficient of(001)-oriented diamond film are 2.391 and in the order of 10~(-5),respectively.
     在2.5~12.5μm红外波长范围内,(001)取向金刚石膜的折射率和消光系数几乎不随波长的改变而变化,折射率为2.391,消光系数在10-5范围内;
短句来源
     Results indicate that dielectric loss(tanδ)of CVD diamond film increase with the increase of CH 4 con-centration(100~200sccm),due to the increase of growth rate of CVD diamond and content of non-diamond carbon.
     研究结果表明 ,随着甲烷浓度 (100~200sccm)的增加 ,CVD金刚石膜的生长速率和非金刚石碳的相对含量增加,从而导致膜的介质损耗 (tanδ)增加 ,造成CVD金刚石膜质量下降。
短句来源
     Large Area Deposition of B-doped CVD Diamond Film
     大面积B掺杂CVD金刚石膜的制备研究
短句来源
     The paper mainly studies the factors to influence the fracture characteristic of diamond film from the micro - structure of low fracture diamond film.
     主要从低断裂性能的金刚石膜的显微结构方面,研究影响金刚石膜断裂性能的因素.
短句来源
更多       
  diamond coatings
     STUDY ON DEPOSITION OF DIAMOND COATINGS ON WC-15% Co BY HF CVD
     用热丝法在硬质合金基体上沉积金刚石膜的研究
短句来源
     STUDY ON CVD DIAMOND COATINGS ON CEMENTED CARBIDE SUBSTRATE WITH HIGH CONTENT OF COBALT
     高钴硬质合金基底上化学气相沉积金刚石膜的研究
短句来源
     The paper also describes fields and some case of application about amorphous diamond coatings.
     文中还系统介绍了非晶金刚石膜的应用领域和某些应用案例。
  diamond fi lm
     The influences of the nucleation and growth of diamond film were studied on the following conditions: CH_4/H_2=1%~5%. substrate temperature form 700℃ -880 ℃. bias-voltage form 0V-400V, pressure form 1kpa~5kpa.
     本文主要研究了在CH_4/H_2=1%~5%,基体温度为700℃~880℃,偏压为OV~400V,沉积气压为1kPa~5kPa等一系列实验条件下金刚石膜的形核与生长。
短句来源
     Refractive index and extinction coefficient of(001)-oriented diamond film are 2.391 and in the order of 10~(-5),respectively.
     在2.5~12.5μm红外波长范围内,(001)取向金刚石膜的折射率和消光系数几乎不随波长的改变而变化,折射率为2.391,消光系数在10-5范围内;
短句来源
     Results indicate that dielectric loss(tanδ)of CVD diamond film increase with the increase of CH 4 con-centration(100~200sccm),due to the increase of growth rate of CVD diamond and content of non-diamond carbon.
     研究结果表明 ,随着甲烷浓度 (100~200sccm)的增加 ,CVD金刚石膜的生长速率和非金刚石碳的相对含量增加,从而导致膜的介质损耗 (tanδ)增加 ,造成CVD金刚石膜质量下降。
短句来源
     Large Area Deposition of B-doped CVD Diamond Film
     大面积B掺杂CVD金刚石膜的制备研究
短句来源
     The paper mainly studies the factors to influence the fracture characteristic of diamond film from the micro - structure of low fracture diamond film.
     主要从低断裂性能的金刚石膜的显微结构方面,研究影响金刚石膜断裂性能的因素.
短句来源
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      diamond films
    Electrochemical and thermoelectric measurements show that the sulfur-containing diamond films grown in gas phase lean in boron are n-type, whereas those grown with higher boron content are overcompensated, hence, p-type.
          
    Electrochemical properties of the n-type diamond films are studied for the first time using methods of electrochemical impedance, open-circuit photopotential, and voltammetric curves in Fe(CN)63-/4- solutions.
          
    Electrochemical behavior of undoped polycrystalline diamond films annealed in a vacuum at 1775 to 1915 K is studied.
          
    Impedance spectra for a new electrode material, undoped polycrystalline diamond films vacuum-annealed at 1775 to 1915 K, taken in indifferent electrolytes are analyzed.
          
    Electrode behavior of homoepitaxial (single-crystal) boron-doped diamond films deposited onto differently orientated faces of dielectric diamond single crystals is studied by the electrochemical impedance and potentiodynamic curve methods.
          
    更多          
      diamond film
    Three types of absorbing films were tested: nickel foil, diamond-like carbon (DLC) film, and epitaxial CVD diamond film.
          
    The photocurrent and photopotential for undoped polycrystalline diamond film electrodes prepared by chemical vapor deposition and annealed in vacuum at 1500-1640°C are measured.
          
    The preetching of the Ti substrate produces the titanium hydride layer that can affect the boron-doped diamond film growth significantly.
          
    The substrate roughened surface obviously improved the diamond film adhesion and reduced the inner stress.
          
    For samples of thin (~10 μm) diamond films on silicon, the photoacoustic spectra revealed peculiarities associated with absorption in the silicon substrate of light transmitted by the diamond film.
          
    更多          
      diamond coatings
    The microhardness and wear resistance of chromium diamond coatings and the effect of the diamond stock on the electrical conductivity and throwing power of the electrolyte were studied.
          
    Polycrystalline diamond coatings over 100 μm thick are produced on AlN ceramic substrates by microwave-plasma CVD from a CH4-H2-O2 mixture.
          
    The diamond coatings usually suffer premature failure because of spallation, distortion or defects such as cracks near the interface due to these excessive residual stresses.
          
    The successful implementation of diamond coatings also expedited similar research in the deposition of cubic boron nitride.
          
    In the development of diamond and c-BN products the analytical methods for characterizing the surface, bulk and interface of the diamond coatings are very important.
          
    更多          


    The diamond thin films have been synthesized on St,Ge, Cu, Mo, WC and graphite substrates with thermal CVD from mixture gaseous of CH4, and H2, and polycrystalline diamond films with an area of more than 20 X 20 mm2, and growth features of diamond thin film is studied.

    本文采用热解化学气相沉积方法,以甲烷和氢的混合气体为原料,在单晶硅和锗、 铜、钼、石英玻璃、碳化钨和石墨基板上合成金刚石薄膜,而且在单晶硅基板上合成出其面积大于20×20mm2的比较均匀的金刚石膜,同时对金刚石膜的生长特性进行了研 究。

    This paper provides a board review of the progress in vapordeposition.Emphasis is placed on TiN hard coating,wear res-istant coatings,diamond films,Ti surface alloying using ca-thodic arc ion plating,Al vapor deposition on steel strip,hi-gh-temperature protective coatings,solar-energy adsorptioncoatings,and a new magneto-optical data storage medium.

    《表面工程》杂志编辑部于1989年7月20日邀请部分北京气相沉积专家举行座谈。参加座谈会的专家有:郑中岳、刘家浚、徐冰仲、范玉殿、王怡德、王福贞、吕反修、范瑞麟、王葆初、王荫君、韩阶平、殷志强、张福林、张玉群。中国科协学会部寇铁城同志也参加了座谈会。现将座谈会关于国内外气相沉积发展情况整理成文发表。本文由表面工程研究所气相沉积研究室范玉殿教授汇集。本文综述了气相沉积的进展情况。主要涉及TiN 硬质膜、耐磨镀层、金刚石膜、阴极电弧渗钛、带钢真空镀铝、物理沉积高温涂层、太阳能吸热膜以及一种新型光盘存貯介质等。

    The Diamond-Like Carbon (DLC) film, prepared with hydrocarbon gases decomposed by RF-plasma has the properties of high hardness, chemical inertness and IR transparence etc. In this paper, we study the properties of infrared, mechanical, structure and electricity of the DLC film. The spectral properties of coated element which being used in the infrared devices are presented, and the forming mechanism of the DIC film in low temperture and pressure is discussed.

    利用射频等离子分裂碳氢气体制备的类金刚石膜,具有硬度高、耐蚀和良好的透红外光等特性.本文研究了类金刚石膜的红外、机械、结构及电学特性,给出该膜应用于红外装置中镀膜元件的光谱性能.并结合文中所用的制备方法,讨论了类金刚石膜在低温低压下的形成机制.

     
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