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金刚石薄膜的形核
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  diamond nucleation
     Analysis of Diamond Nucleation on WC-Co Substrate with Copper and Copper/Titanium Intermediate Layers
     硬质合金上采用Cu和Cu/Ti过渡层沉积金刚石薄膜的形核分析
短句来源
     By analyzing the results, conclusions were drown as followings:(1) The positive bias plays an important role on diamond nucleation.
     (2)在甲烷浓度(CH_4/H_2)为1%~4%的范围内,金刚石薄膜的形核速率和沉积速率随着甲烷的浓度增大而增大。
短句来源
     The results also suggest that too low aluminum concentration on the substrate surface or too high deposition temperature are detrimental to diamond nucleation and growth.
     而试样表面过低的铝含量及过高的沉积温度不利于金刚石薄膜的形核与生长。
短句来源
  “金刚石薄膜的形核”译为未确定词的双语例句
     Research of the Diamond Film Nucleation
     金刚石薄膜的形核研究
短句来源
     1. An improving HFCVD technology to prepare the diamond filmThe influence of substrate bias, methane concentration, carbon source on nucleation, morphology and crystallography of grown diamond films deposited by homemade HFCVD apparatus were investigated.
     围绕金刚石膜的形核与生长,在自制的热丝化学气相设备中系统地研究了偏压、甲烷浓度、碳源对金刚石薄膜的形核密度、生长速率和表面形貌的影响,运用原子力显微镜、扫描电子显微镜和X射线衍射谱对金刚石薄膜进行了分析,得到了以下结论:
短句来源
     The nucleation density and growth rate are high, but the adhesion is poor when only polishing etching pretreatment for the WC C O substrates.
     基体表面只经抛光、腐蚀预处理,金刚石薄膜的形核率和沉积速率较高,结晶性好,但附着性较差;
短句来源
     The nucleation density ofdiamonds for the pretreatment of coating diamon-like films is higher than that forany pretreatments of mechanically POliShing.
     经预淀积类金刚石薄膜后,金刚石薄膜的形核密度大于机械抛光的形核密度。
短句来源
     SEM micrograph show that the dense of diamond is strongly influenced by the surface state of the substance and with perfect. and clear crystal faces.
     SEM结果表明基片表面状况影响金刚石薄膜的形核密度,而工作气压则影响金刚石薄膜晶形的完整性,适当气压下生长的金刚石薄膜致密且晶形完整、清晰。
短句来源
  相似匹配句对
     Research of the Diamond Film Nucleation
     金刚石薄膜的形核研究
短句来源
     Reactive Ion Etching of Diamond Films
     金刚石薄膜的反应离子刻蚀
短句来源
     Application of Diamond Thin Films
     金刚石薄膜的应用
短句来源
     Research of the Diamond Nucleation and Its Semiconductive Property
     金刚石薄膜的制备形核及其半导体性质的研究
短句来源
     Studies of Nucleation of Diamond Films Grown by Chemical Vapor Deposition
     CVD金刚石形核的研究
短句来源
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  diamond nucleation
The reasons for the catalytic activity of copper in diamond nucleation are analyzed.
      
A suspension of ultrafine-dispersed nanodiamond was used for introducing (in particular, selectively) high-density centers of diamond nucleation on various substrates.
      
Experiments at 6.0-7.1 GPa and 1500-1700°C were carried out to explore the boundary conditions of diamond nucleation and growth in pyrrhotite-carbon melt-solutions.
      
Considering the excess pressure, the expression of diamond nucleation rate was obtained.
      
It was found that the diamond nucleation density affected the field emission properties.
      
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The deposition process and rate of the diamond film on hard-metal subs- rates of WO-Co and WC-TiC-Co with microwave plasma chemical vapor de- position of a methane/hydrogen/oxygen gas mixture have been Studied.It is found that the deposition rate and hardness of the diamond film on the hard- metal substrate of WC-TiC-Co are superior to those on the hard-metal subs- trate of WC-Co.TiC evidently has benefited the deposition result of the dia- mond film.The growth of crystal nuclei of the diamond film was aslo...

The deposition process and rate of the diamond film on hard-metal subs- rates of WO-Co and WC-TiC-Co with microwave plasma chemical vapor de- position of a methane/hydrogen/oxygen gas mixture have been Studied.It is found that the deposition rate and hardness of the diamond film on the hard- metal substrate of WC-TiC-Co are superior to those on the hard-metal subs- trate of WC-Co.TiC evidently has benefited the deposition result of the dia- mond film.The growth of crystal nuclei of the diamond film was aslo obser- ved by SEM.

本文采用 CH_4—H_2—O_2微波等离子体化学气相沉积法在硬质合金基体上沉积金刚石薄膜,研究 YG(WC-Co)及 YT(WC—TiC—Co)两类硬质合金作基体对沉积过程及沉积速率的影响.阶段性研究结果表明,在 YT 类硬质合金上沉积金刚石薄膜的沉积速率和硬度均优于在 YG 类上的,TiC 对金刚石薄膜的沉积效果有明显的有利作用.本文还用扫描电镜观察分析了金刚石薄膜的形核长大过程.

Diamond films were synthesized on TC4 Ti alloy and Si(001)substrates bycombustion flame method in the atmosphere.The films obtained were characterized by scanningelectron microscopy and laser Raman spectroscopy.The results indicated that the structure andmorphology of diamond films depend strongly on the substrate temperature,the ratio of O_2 toC_2H_2 gas flow rates,nature of substrate and depositing location.The effects of substrate surfacepretreatment on nucleation and growth behavior of diamond films were...

Diamond films were synthesized on TC4 Ti alloy and Si(001)substrates bycombustion flame method in the atmosphere.The films obtained were characterized by scanningelectron microscopy and laser Raman spectroscopy.The results indicated that the structure andmorphology of diamond films depend strongly on the substrate temperature,the ratio of O_2 toC_2H_2 gas flow rates,nature of substrate and depositing location.The effects of substrate surfacepretreatment on nucleation and growth behavior of diamond films were studied.The nucleationdensity of the diamond crystallites is enhanced when substrate is scratched by diamond grit andcoated with mechanical pump oil.On chemically etched substrate,the nucleation and growth ofdiamond is very uniform.Nucleation is favored on prominent features of the substrate,for ex-ample,scratch and crystal boundary.

用燃烧火焰法在 TC4 Ti 合金和单晶 Si(001)面上沉积了金刚石薄膜。对合成的膜进行了扫描电镜、激光喇曼光谱分析。结果表明,金刚石薄膜的结构和形貌强烈取决于沉积温度、O_2/C_2H_2流量比等工艺参数。研究了衬底表面预处理对金刚石薄膜形核及长大的影响,并对表面预处理影响形核的原因进行了初步探讨。

A new surface pretreatment method,i.c.chemically etching,for enhancing nucleation of diamond films sy- nthesized by O_2/C_2H_2 combustion flame is reported.The nucleation and growth be- havior of diamond films on the etched TCL substrate and the relationship be- tween the nucleation density and grain size are investigated.The experimental results show that for the substrate etc- hed with metallographic etching acid not only the nucleation density is enhanced but also the nucleation and growth of diamond films...

A new surface pretreatment method,i.c.chemically etching,for enhancing nucleation of diamond films sy- nthesized by O_2/C_2H_2 combustion flame is reported.The nucleation and growth be- havior of diamond films on the etched TCL substrate and the relationship be- tween the nucleation density and grain size are investigated.The experimental results show that for the substrate etc- hed with metallographic etching acid not only the nucleation density is enhanced but also the nucleation and growth of diamond films are very homogeneous.The nucleation density of diamond films inc- reases with decreasing grain size,provi- ngthat the action of crystal boundary on the nucleation of diamond films is impo- rtant.It is found that at the whole sta- ges of nucleation and growth of diamond films the depositing and etching exist from beginning to end.The stronger the etching action,the higher the quality of diamond films.The size of diamond cry- stals,prior to overlap between the neigh bouring regions,increases with increasing deposition time.A continuity diamond films can be obtained within 2 min.

报导了一种提高火焰法合成高质量金刚石薄膜形核密度的新方法-化学腐蚀法;研究了在化学腐蚀试样表面上金刚石的形核与生长行为、晶粒度与形核密度之间的关系。试验表明:经腐蚀后的样品,金刚石形核均匀致密,2min内便能形成连续的膜。金刚石形核密度随晶粒度的增加而增大。初步分析了化学腐蚀法提高形核密度的原因,认为晶界对金刚石的形核起重要作用。

 
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