n-型 n-type(59)   n-type      The preparation and performance of n-type FeSi_2/Bi_2Te_3 segmented thermoelectric material      n-型梯度结构热电材料FeSi_2/Bi_2Te_3的制备与性能研究 短句来源      Three new sharp lines at 478.6 nm (2.59eV), 483.3 nm (2.565eV) and 486.1nm (2.551eV) were observed in the as-irradiated n-type 6H-SiC samples after neutron, 0.5MeV and 1.7MeV electrons irradations, respectively.      对经中子，1.7MeV和0.5MeV电子辐照后未经退火的n-型6H-SiC观察到3条新的尖锐的谱线，位于478.6nm(2.59eV)、483.3nm(2.565eV)和486.1nm(2.551eV)，它们还未见公开报道。 短句来源      N-type can be further divided as C(Craik)-type and H(Herbert)-type.      N-型又可以细分为C(Craik)-型和H(Herbert)-型。 短句来源      Growth of N-Type ZnSe: Cl Layers by Molecular Beam Epitaxy      N-型ZnSe:Cl的分子束外延生长 短句来源      The relation of C_(SC)~(-2)-E of rebar electrode showed linear M-S relationship and positive slope within—0.78—0.37 V(SCE),indicating the passivation film on rebar was n-type semiconductor.      试验表明：在电位—0．78～0．37 V(SCE)范围,混凝土中钢筋钝化膜的C_(SC)~(-2)-E关系呈M-S曲线,且斜率为正,表明钢筋钝化膜为n-型半导体,其平带电位约为—0．85V； 短句来源 更多          “n-型”译为未确定词的双语例句      Canonical forms of A_n-linear matrix problems      A_n-型线性矩阵问题的典范形 短句来源      the fixed charge at the interface is -2.28×10~11cm~-2;      ZnS钝化下经硫化的n-型InP表面的固定电荷密度为-2.28×1011/cm2; 短句来源      The results indicated that Tet 7.5, 15 and 30 mmol·L -1 inhibited the increase in open time constants and open state probability of L and N type calcium induced by anoxia in concentration dependent manner.      结果发现 ,Tet7.5,1 5和 30 μmol·L-1浓度依赖性缩短由缺氧诱导的L-和 N-型钙通道开放时间增加 ,降低开放概率 . 短句来源      H\-2\|TPR, O\-2\|TPD\|MS and in situ electrical conductivity studies confirmed that the active oxygen species of p\|type semiconductor catalysts were nonstoichiometric oxygen species and the ones of n\|type catalysts were surface lattice oxygen.      H2 - TPR、O2 - TPD- MS和原位电导研究结果表明 ,p-型半导体金属氧化物的活性氧物种为非化学计量氧物种 ,n-型半导体的活性氧物种为表面晶格氧 短句来源      AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si∶H/c-Si solar cells.      文章运用美国宾州大学发展的 AMPS程序模拟计算了 n-型纳米硅 ( n+ -nc-Si∶ H) /p-型晶体硅 ( p-c-Si)异质结太阳电池的光伏特性。 短句来源 更多          相似匹配句对      (2)C shape;      C型 ; 短句来源      (3)D shape.      D型。 短句来源      brassii type; N.      brassii型 ,N . 短句来源      Neumann type system.      Neumann型系统。 短句来源      NIR D TV Telescope      NIR-D型电视望远镜 短句来源 查询“n-型”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14]. 例句来源       However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. 例句来源       Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). 例句来源       Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. 例句来源       One was from the orf215 region of the N-type mtDNA. 例句来源       更多                    The electrical conductivity, Hall coefficient, and magneto-resistance effect of n and p type InSb under temperatures 80-500°K have been measured, the impurity concentrations (after compensation) of samples varying in the range of 4×1013-7×1017cm-3.             文中报导了80—500°K间n型及p型InSb的电导率、霍尔系数及磁阻效应的测量,所用样品的杂质含量(补偿后)为4×10~(13)—7×10~(17)cm~(-3)。 由结果的分析得出InSb的本征载流子浓度、禁带宽度及电子迁移率等数值,讨论了电子的散射机构以及强磁场下磁阻与磁场强度成一次方正比关系的可能原因。 文摘来源          This article describes the difference of mobility between N type indium antimonide ingot and the rectaugular sample, which was cut from the ingot on the position where we want to measure the mobility of ingot. This difference exceeds the error of the measurements. Therefore we think this is due to the introduction of the mechanical damage by cutting and grinding. And at the same time it is also due to the introduction of the thermal damage by the preparation of the electrical contacts. They influence ...             本文叙述由于发现区熔法制备的N型InSb单晶锭条的迁移率与锭条同处切下的矩形样品的迁移率之间的差别,超出测量误差范围之外,从而得到切割、研磨过程引入机械损伤及电极制备过程引入“热损伤”的看法,它们影响所研究的样品的电学性质。由电学性质的变化,测定了损伤深度约为0.2mm至0.4mm。由Read的位错散射理论所作的计算结果与实验结果比较,得到较好的符合,从而认为机械损伤主要是位错(即“位错裂隙”)的作用。同时,由实验结果,我们得到冷压焊金丝的电极制备方法比焊锡的好。 文摘来源          The impurity-assisted indirect transition of n-type degenerate Germanium is a second order process. Electrons near the top of the valence band were excited to the (0, 0, 0) valley of the conduction band by the interaction with light and then scattered into the minimum of the conduction band by the short range field of impurity atoms. Using the second order perturbation theory, the absorption coefficient due to such processes was calculated. The fact that contributions of various donors are diffe...             N型简并锗中杂质协助的间接光跃迁是个二级过程.价带顶附近的电子先受光的激发跃迁到导带的(0,0,0)谷,然后受杂质近程场的散射转入导带底.利用二级微扰理论计算了这种过程对光吸收系数的贡献.能说明不同的施主杂质的贡献是不同的,砷比磷的大. 文摘来源   << 更多相关文摘         相关查询: n- - n- - n n-(n bromo-n p-n n-人 n-三甲基 s-n n-queens n-丙磺舒 n-2  对查询结果不满意

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