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cvd金刚石膜的     
相关语句
  cvd diamond films
     The Piezoresistances and its Temperature Characteristic of CVD Diamond Films
     CVD金刚石膜的压阻及其温度特性
短句来源
     Polishing Techniques of CVD Diamond Films
     CVD金刚石膜的抛光技术
短句来源
     Electrical Properties of [001] Textured and Non-Texture d CVD Diamond Films
     [001]织构和非织构CVD金刚石膜的电学特性
短句来源
     Interface Study of CVD Diamond Films Grown on Molybdenum
     钼片上CVD金刚石膜的界面研究
短句来源
     Field emission mechanism of CVD diamond films
     CVD金刚石膜的场发射机制(英文)
短句来源
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  cvd diamond film
     Results indicate that dielectric loss(tanδ)of CVD diamond film increase with the increase of CH 4 con-centration(100~200sccm),due to the increase of growth rate of CVD diamond and content of non-diamond carbon.
     研究结果表明 ,随着甲烷浓度 (100~200sccm)的增加 ,CVD金刚石膜的生长速率和非金刚石碳的相对含量增加,从而导致膜的介质损耗 (tanδ)增加 ,造成CVD金刚石膜质量下降。
短句来源
     Large Area Deposition of B-doped CVD Diamond Film
     大面积B掺杂CVD金刚石膜的制备研究
短句来源
     Results also show that dielectric loss(tanδ)of CVD diamond film decreases with the increase of deposition temperature(1010K~1030K),and dielectric loss increases with the increase of nitrogen addition.
     随着沉积温度(1010~1030K)的提高 ,CVD金刚石膜的介电损耗减小。 氮气加入量的增加 ,CVD金刚石膜的介质损耗增加。
短句来源
     The optical and electronic performances of CVD diamond film and the defect energy-levels in the film were investigated in detail. We firstly detected the defect energy-level at 1.55 eV by using the PL spectrum and tentatively attributed it to the zero-phonon luminescence line (ZPL) or vibronic band of the [Si-V]° induced by the Si-O bonds.
     详细讨论了CVD金刚石膜的光电性能与膜中缺陷能级的关系,首次利用PL光谱测量发现了CVD金刚石膜中1.55eV缺陷能级的存在,并归之为Si-O键有关的[Si-V]~0中心产生的零声子发光线(ZPL)或振动带。
短句来源
     Discussion on the manufacturing technic of the direct current arc plasma jet on CVD diamond film
     直流电弧等离子体喷射CVD金刚石膜的制备工艺探讨
短句来源
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  cvd diamond thin film
     Deposition of CVD Diamond Thin Film on Carbide Substrate by Using of Electro-planting Interlayer
     Cr过渡层沉积粘附型CVD金刚石膜的机理研究
短句来源
     The structure of Cr was studied by Scanning Electron Microscope (SEM) and the electron probe microanalysis (EPMA) was applied on the cross section Cr pretreated by H plasma. The structure and composition of CVD diamond thin film were studied by SEM and Raman Scattering Spectroscopy (RAMAN). The cross section between Cr and diamond film was characterized by means of X-ray diffraction (XRD).
     利用SEM分析了电沉积层的形貌 ,利用EPMA分析了H等离子处理后电沉积层的断面 ,利用SEM和Ra man分析了金刚石膜的表面形貌、成分 ,利用XRD分析了过渡层和CVD金刚石膜的结合面 ,利用压痕法研究了金刚石薄膜与基体的结合力。
短句来源
  c vd diamond film
     Results indicate that dielectric loss(tanδ)of CVD diamond film increase with the increase of CH 4 con-centration(100~200sccm),due to the increase of growth rate of CVD diamond and content of non-diamond carbon.
     研究结果表明 ,随着甲烷浓度 (100~200sccm)的增加 ,CVD金刚石膜的生长速率和非金刚石碳的相对含量增加,从而导致膜的介质损耗 (tanδ)增加 ,造成CVD金刚石膜质量下降。
短句来源
     Large Area Deposition of B-doped CVD Diamond Film
     大面积B掺杂CVD金刚石膜的制备研究
短句来源
     Results also show that dielectric loss(tanδ)of CVD diamond film decreases with the increase of deposition temperature(1010K~1030K),and dielectric loss increases with the increase of nitrogen addition.
     随着沉积温度(1010~1030K)的提高 ,CVD金刚石膜的介电损耗减小。 氮气加入量的增加 ,CVD金刚石膜的介质损耗增加。
短句来源
     The optical and electronic performances of CVD diamond film and the defect energy-levels in the film were investigated in detail. We firstly detected the defect energy-level at 1.55 eV by using the PL spectrum and tentatively attributed it to the zero-phonon luminescence line (ZPL) or vibronic band of the [Si-V]° induced by the Si-O bonds.
     详细讨论了CVD金刚石膜的光电性能与膜中缺陷能级的关系,首次利用PL光谱测量发现了CVD金刚石膜中1.55eV缺陷能级的存在,并归之为Si-O键有关的[Si-V]~0中心产生的零声子发光线(ZPL)或振动带。
短句来源
     Discussion on the manufacturing technic of the direct current arc plasma jet on CVD diamond film
     直流电弧等离子体喷射CVD金刚石膜的制备工艺探讨
短句来源
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      cvd diamond films
    Optical and thermal properties of metals, ceramics, and CVD diamond films upon high-temperature laser heating
          
    NIR- and VIS-raman spectroscopy of CVD diamond films
          
    Quantitative investigation of boron incorporation in polycrystalline CVD diamond films by SIMS
          
    Polycrystalline, strongly faceted CVD diamond films are effectively planarized.
          
    Determination of thermal conductivity of CVD diamond films via photoacoustic measurements
          
    更多          
      cvd diamond film
    Three types of absorbing films were tested: nickel foil, diamond-like carbon (DLC) film, and epitaxial CVD diamond film.
          
    Optical and electronic performances of CVD diamond film and its applications in radiation detectors
          
    Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer
          
    Influences of Process Parameters on 111-Oriented CVD Diamond Film Growth Under Two-Step Method
          
    The growth of 111-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method.
          
    更多          


    To improve the surface roughness of CVD diamond films, ion beam milling was used to polish the film. The results of this experiment indicate that the ideal incident angle of ion beam varies with the surface morphology and that high accelaration voltage of ion beam is beneficial to achieving high polishing rate. It was also found that the film exposing (100) facets can be most easily polished to achieveRa 28 nm surface roughness.

    本文采用氩离子束轰击法,对不同晶体学表面形貌的CVD金刚石膜进行抛光处理。结果表明,对不同表面形貌的金刚石膜,应合理选择离子束轰击入射角,提高离子束加速电压有利于提高抛光效率,(100)择优生长的金刚石膜最容易得到高的表面平整度。

    In this paper, the cathodeluminescence spectra at 300K and 80K, of diamond films prepared by DC plasma CVD under different growth conditions were studied. The variations of the spectra with changing deposition conditions, measurement temperature and the origin of every peak of spectra were discussed.Experimental results show the impurities, defects and crystalline structure of the films have an important effect on the cathodeluninescence spectra.

    本文研究了直流等离子体CVD金刚石膜在常温和液氮温度下的阴极发光光谱,探讨了阴极发光谱中各峰的起因,并分析了光谱随测量温度和沉积条件的变化情况,讨论了造成这种变化的原因.研究表明,金刚石膜中缺陷和杂质以及金刚石膜的晶体结构对它的阴极发光光谱有重要的影响.

    The results of SEM,XRD,Raman and indentation testing,as well as preparation conditions under which diamond films were deposited on TaN2 electric-resistance materials by employing microwave plasma chemical vapor deposition (MWCVD) techniques,are reported. The ways of improving diamond nucleation and adhesion on non-diamond samples are discussed. The CVD diamond serving as protective layers of TaN2 thermal-printing heads was indicated in experiment.

    报道了用微波等离子体化学气相淀积(MWCVD)技术在TaN2电阻材料上淀积高质量金刚石薄膜的制备工艺,以及扫描电镜、X射线衍射、拉曼光谱、压痕测试的测试结果。探讨了提高金刚石膜在非金刚石衬底成核密度与粘附性的实验方法,从实验上证实了CVD金刚石膜可以用作TaN2热敏打印头表面保护层。

     
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