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   沟道 在 无线电电子学 分类中 的翻译结果: 查询用时:0.862秒
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沟道
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  channel
    On Basic Parameters and Radiation Theory of Non-uniform Channel DMOS
    非均匀沟道DMOS基本参数及其辐照理论的研究
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    Microwave Performences of A Si Vertical Channel Power FET
    硅垂直沟道功率场效应管的微波性能
短句来源
    PNP Silicon Transistors Channel Leaking
    硅PNP型晶体管的沟道漏电
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    Measurement of lateral diffusion coefficient for Ti: LiNbO_3 channel waveguide
    测量Ti扩散LiNbO_3沟道光波导的侧扩散系数
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    Measurement of BCCD Channel Potential by Means of High Frequency C-V Method
    高频C-V方法测量埋沟电荷耦合器件的沟道电势
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  active channel
    We fabricate thin film transistors with ZnO as an active channel layer that works well in the n-channel enhancement mode and have a threshold voltage of 17.5V and a mobility rate as high as 1.05cm2/(V·s).
    并以ZnO薄膜为沟道层制作了薄膜晶体管(ZnO -TFT),该晶体管工作在n沟道增强模式,阈值电压为17.5V,电子的场迁移率达到1.05cm2/(V·s).
短句来源
    3. Polycrystalline LiF thin films were grown by thermal evaporation on amorphous substrates. Properties of broad band photo-luminescence at room temperature of active channel (F2 and Fa+) produced by electron beam irradiation were studied.
    3.首次用热蒸发法在玻璃衬底上制备了多晶LiF薄膜平面波导,研究了由电子束照射产生的有源(F_2和F_3~+色心)沟道的室温宽带光致发光特性。
短句来源
    It shows that the active channel with sizeable optical gain and a substantial increase of the refractive index are promising for the realization of active waveguide tunable laser.
    研究表明,室温下有源沟道具有较大的光增益和折射率增量,有望实现可见波段的可调谐有源光波导激光器件。
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  “沟道”译为未确定词的双语例句
    The Theoretical and Experimental Study for 4H-SiC Buried-channel MOSFET
    4H-SiC隐埋沟道MOSFET理论和实验研究
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    The Development of the N-channel Silicon Gate MOS Devices
    硅栅N沟道MOS场效应晶体管的研制
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    Technology of a New n-Channel one-Transistor EAROM Cell Called SIMOS
    一种称为SIMOS的新型n沟道单管EAROM单元技术
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    Velocity Overshoot Effect on a Short-Gate GaAs MESFET
    短沟道GaAs MESFET中的速度过冲效应
短句来源
    Noneutectic Au/Ge Alloy Ohmic Contact Technology for Diffused N-Channel GaAs MESFET
    非共晶Au/Ge欧姆接触工艺改善扩散法n沟道GaAs MESFET
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  channel
Aliasing error bounds are derived for one- and two-channel sampling series analogous to the Whittaker-Kotel'nikov-Shannon series, and for the multi-band sampling series, and a "derivative" extension of it, due to Dodson, Beaty, et al.
      
Aliasing in the one-channel case is shown to arise from a transformation with similarities to a projection.
      
An Estimation of the Truncation Error for the Two-Channel Sampling Formulas
      
Guanidine-type compounds that reached clinical status include amongst others the potassium channel opener, pinacidil and the histamine H2-receptor antagonists (e.g.
      
The tetra-n-butylammonium cations were stacked to give two columns within each channel with cross-sectional size of about 2.30 nm × 0.93 nm.
      
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  active channel
The minimal values in active channel and maximal in the near-bank zone are typical for those channel sections where heavy metals, present in a solid state, are transported as a suspended load (normally the largest part of a polluted river course).
      
In short sections heavy metals associated with the grains of a large mass which has accumulated in the active channel are transported as a bed load and the typical distribution pattern is reversed (in fractions both >amp;lt;1 mm and >amp;lt;0.063 mm).
      
Thus the sharpness and smoothness between active channel and buffer is truly improved by the insertion of MD structure.
      
This paper aims to discuss the effect of order and disorder on the electrical performances of covalent silicon semiconductors and ZnO based ionic oxide semiconductors used as active channel layers in thin film transistors.
      
We report, to our knowledge, the first active channel waveguide in Ti:sapphire.
      
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Channel backscattering technique has been used to investigate pulsed laser and thermal annealing of<111>Si single crystals heavily implanted with Bi. Up to 900℃, thermal annealing residual damage amounts to 35%. But at 750℃, the ratio of substitution of Bi atoms maximizes to 50%. It drops down with the rise of temperature. Outdiffusion of Bi atoms occurs when the annealing temperature exceeds 625℃. However, after pulsed laser annealing, lattice damage almost completely disappeared and Bi atoms are redistributed....

Channel backscattering technique has been used to investigate pulsed laser and thermal annealing of<111>Si single crystals heavily implanted with Bi. Up to 900℃, thermal annealing residual damage amounts to 35%. But at 750℃, the ratio of substitution of Bi atoms maximizes to 50%. It drops down with the rise of temperature. Outdiffusion of Bi atoms occurs when the annealing temperature exceeds 625℃. However, after pulsed laser annealing, lattice damage almost completely disappeared and Bi atoms are redistributed. The concentration of Bi in Si may exceed its solid solubility by an order of magnitude. 95% of Bi atoms are in substitutional sites. Annealing at different energy has been compared too.

本文报导了采用165 keV He~+离子沟道背散射技术研究高剂量铋注入<111>硅后,进行脉冲激光退火的效果,并和热退火作了比较。热退火温度达到900℃时,剩余晶格损伤还有35%;在750℃下退火时,铋的替位率达到最大值50%,温度再升高,替位率反而下降;在退火温度高于625℃时就产生大量铋原子的外扩散。面脉冲激光退火后,晶格损伤几乎全部消除,铋原子进行再分布,它在硅中的浓度可超过固溶度一个数量级,且95%以上处于替代位置。文中还就不同激光能量下的退火情况作了比较。

An investigation of the Anderson Transition ir MOS inverson layers is given by measur-ing the dependence of the channel conductivity on gate voltages in the temperature range from4.2K to 20K.It is found through the experiment that the plots In σ~1/T do not generallyconverge as extrapolated to 1/T=0.In view of the fact that interface potential fields havenot only the microscopic disorders,but also the macroscopic inhomogeneities,the inversionlayers can be considered as an inhomogeneous system consisting of many...

An investigation of the Anderson Transition ir MOS inverson layers is given by measur-ing the dependence of the channel conductivity on gate voltages in the temperature range from4.2K to 20K.It is found through the experiment that the plots In σ~1/T do not generallyconverge as extrapolated to 1/T=0.In view of the fact that interface potential fields havenot only the microscopic disorders,but also the macroscopic inhomogeneities,the inversionlayers can be considered as an inhomogeneous system consisting of many small macroscopic re-gions with different mobility edges.The model of localization for a homogeneous disordersystem is used to deal with these small regions.Thus,the results obtained are in agreementwith the experimental data,and the treatment is also conducive to the explanation of such"anomalous" effects as the change of mobility edge with electron Fermi energy and the appea-rance of magnetoconductance oscillations.

在4.2—20K温度范围内,利用MOS器件的沟道电导率随栅压的变化,研究了Si-SiO_2界面反型层中的Anderson转变.发现实验Inσ~1/T曲线外推到1/T=0时,一般都不交于一点.考虑到界面势场除具有微观无序性外,尚具有宏观不均匀性,而把反型层看成是由许多迁移率边互不相同的宏观小区域组合而成的非均匀系统;在每个小区域内,再采用均匀无序系统的定域化模型来处理.这样,计算的结果与实验符合,也有助于解释迁移率边随费米能级变化,出现磁阻振荡等反常效应.

A new construction of FET with slow variation channel "cross-section" (conduc-tivity) is proposed in this paper.In a conventicnal FET,the high frequency currentflowing in the channel is attenuated by the R-C effect of the channel resistance andside capacitance.In a GaAs VCFET,however,the high frequency current amplitudewill be enhanced along the channel,when the channel electric field intensity is socontrolled that the electron differential mobility is negative,thus,obtaining a three-terminal negative resistance...

A new construction of FET with slow variation channel "cross-section" (conduc-tivity) is proposed in this paper.In a conventicnal FET,the high frequency currentflowing in the channel is attenuated by the R-C effect of the channel resistance andside capacitance.In a GaAs VCFET,however,the high frequency current amplitudewill be enhanced along the channel,when the channel electric field intensity is socontrolled that the electron differential mobility is negative,thus,obtaining a three-terminal negative resistance amplifier with very high critical frequency.

本文提出了一种具有渐变沟道“截面”(电导率)的新型场效应管.在通常的场效应管中,高频电流通过沟道时将因沟道电阻及其侧面电容的 R C效应而衰减,但是在一只 GaAs变截面场效应管中,当控制沟道场强使得其中的电子微分迁移率取负值时,高频电流振幅将沿着沟道递增,从而得出一种三端负阻放大器,其极限频率是很高的.

 
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