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成核生长
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  nucleation and growth
     Finally, it turned to be controlled by dissolution of Ca(OH)_2. TEM and X-ray diffraction were used to observe the nucleation and growth of CaCO_3 ultrafine particles. The effects of additives were discussed.
     利用TEM及X衍射分析研究了超细CaCO_3的成核生长机理,探讨了CaCO_3粒子均相成核形成非晶态CaCO_3,并与Ca(OH)_2结合形成线性中间体,而后转变成方解石晶型CaCO_3粒子的过程。
短句来源
     The conversion of magnetite to maghemite has been studied by Mb'ssbauer effect. That is a nucleation and growth process of γ-Fe2O3. The change of the concentration of Fe3O4 with time was determined by the change of magnetic moment in the oxidizing process.
     根据穆斯堡尔谱分析,Fe_3O_4转变为γ-Fe_2O_3是γ-Fe_2O_3成核生长过程。
短句来源
     The possible reaction mechanism and the kinetic equation were suggested by comparing the kinetic parameters. The result shows that this dehydrate process is nucleation and growth. The kinetic equation can be expressed as:dα/dt=Aexp(-E/RT) {(1-α)[-ln(1-α)]~(-1)/2}
     采用Achar微分法和Coats-Redfern积分法对配合物进行动力学分析,推断出脱水阶段的热分解反应的可能机理,求出该配合物热分解的非等温动力学数据,结果显示,脱水过程属于n=1/2的成核生长机理,其动力学方程为dα/dt=Aexp(-E/RT){(1-α)[-ln(1-α)]-1/2}.
短句来源
     It is found by the research that Fe_3O_4 and FeO were formed by oxidation and reduction between iron oxide coating on iron catalyst surface and carbon source of graphite at 5.7GPa and 1600℃,with some iron melted and exuded out,its contact with carbon source of graphite caused diamond nucleation and growth.
     研究发现,在5.7GPa和1600℃的条件下,铁触媒表面的氧化铁包覆层与石墨碳源发生氧化还原反应而生成了F e3O4和F eO,同时包覆层内部的铁熔融渗出,并与石墨碳源接触,促使了金刚石的成核生长
短句来源
     The results showed that the Fe_(2)O_(3) layer was deoxidized by graphite to form Fe_(3)O_(4) and FeO at 5.7 GPa and 1600℃. At the same time the iron melted and exuded through the Fe_(2)O_(3) layer,and then contacted with graphite,to realize the nucleation and growth of diamond.
     研究发现在5.7GPa和1600℃的条件下,铁触媒表面的氧化铁包覆层与石墨碳发生了氧化还原反应生成Fe3O4和FeO,同时包覆层内部的铁熔融渗出,并与石墨碳源接触促使了金刚石的成核生长
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  nucleation growth
     ONE DIMENSIONAL RANDOM SUCCESSIVE NUCLEATION GROWTH MODEL
     一维随机成核生长模型
短句来源
     And then, under different probabilities of growth and neighbor conditions, the modified model of random successive nucleation growth (RSNG) is adopted to simulate the one-dimensional growth of fractal aggregation, the aggregation generation by generation (AGG) model is used for two-dimensional growth, and the property of the critical percolation is studied emphatically.
     然后,在不同的生长概率和不同的近邻条件下,采用改进的随机逐次成核生长(RSNG—Random Successive Nucleation Growth)模型,模拟一维分形凝聚生长; 采用代代凝聚(AGG—Aggregation Generation by Generation)模型,模拟二维分形凝聚生长;
短句来源
     We present a randomsuccessive nucleation growth model,a two-and a three-dimensional aggregation generation-by-generation model to investigate percolation properties of fractal aggregations with various neighbor conditions and lattice size.
     提出3种模型———小尺寸随机逐次成核生长模型和二维及三维代代聚集生长模型,在不同的近邻条件下和不同尺寸的网格中,通过蒙特卡罗模拟,系统地研究了一维、二维和三维分形聚集的逾渗性质.
短句来源
     We revealed that homogeneous nucleation growth was the dominant growth mechenism of the particles prepared at low pressure (<3 Torr).
     超微粒的生长机制与气压相关,在低气压下(P<3Torr)为成核生长;
短句来源
     It was found that a chain monolayer of polyaniline crystal cell was formed by the two dimensional instantaneous nucleation growth without diffusion control during the initial stage of eletropolymerization, and after forming the monolayer, the growing process of polyaniline tubules was controlled by diffusion instead.
     结果表明:电聚合初始,苯胺二维非扩散控制的瞬时成核生长形成聚苯胺晶胞链段单层,单层形成以后,聚苯胺的生长过程变为线性扩散控制.
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  “成核生长”译为未确定词的双语例句
     GROWTH OF LiNdP_4O_(12) CRYSTALS BY INDUCTIVE NUCLEATION METHOD
     诱导成核生长LiNdP_4O_(12)晶体
短句来源
     the dehydrate process between 703 K and 843 K is controlled by nucleating and growing with an activated energy of 198.89 kJ/mol,a pre-exponential factor of 2.458 5×10~(13) s~(-1).
     在703—843 K区间脱去1分子结构水,属于成核生长控制,活化能198.890 kJ/mol,指前因子A为2.458 5×1013s-1。
短句来源
     The decomposition reaction from 1070K to 1210K is LiMn2O4 (Cubic)→LiMn2O4-δ(Orthorhombic) +δ/2O2(g)(?) , which is controlled by nucleating and growing, and the activated energy is 204.16kJ/mol.
     1070-1210K的分解反应为LiMn2O4(Cubic)→LiMn2O4-δ(Orthorhombic)+δ/2O2, 过程属于成核生长控制,活化能为204.16kJ/mol.
短句来源
     Nucleation and Grain-Growth Kinetics for Reduction of Acicular Ultrafine a-Fe_2O_3 Particles
     针形超微粒α-Fe_2O_3还原过程成核生长动力学
短句来源
     The reaction from 1210K to 1473K is 3LiMn2O4_δ(Orthorhombic)→LiMnO2+ Mn3O4 + Li2Mn2O4+(l-3δ/2)O2 (g)(?) . Nucleating and growing is the key step of the process from 1210K to 1300K, and its activated energy is 185.61kJ/mol.
     1210-1473K的分解反应为3LiMn2O4-δ (Orthorhombic)→LiMnO2+Mn3O4+Li2Mn2O4+(1-3δ/2)O2,1210-1300K内的分解过程属于 成核生长控制,活化能为185.61kJ/mol,在1300-1473K内的分解过程属扩散控制,活化能为 208.74kJ/mol.
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  nucleation and growth
The mechanism of mutual influence of microcrystal nucleation and growth processes is proposed.
      
The kinetics of particle nucleation and growth is studied within the framework of the model of diffusion-limited aggregation by the combined marching and Monte Carlo methods.
      
The kinetics of particle nucleation and growth is studied within the framework of the model of diffusion-limited aggregation by the combined marching and Monte Carlo methods.
      
Detailed control of the conditions favorable for the nucleation and growth processes of nanorods of a given SiC polytype is necessary because the electrical and optical properties of each SiC polytype are very different.
      
The nucleation and growth of crystals in a gel of alkali lead borosilicate composition are investigated.
      
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  nucleation growth
The suggested method for revealing the Si nanocrystals and clusters incorporated into the oxide provides a convenient way to study the specific features of nucleation growth and spinodal decomposition in the Si solid solution in the SiO2 oxide.
      
It is indicated that the particle growth is promoted mainly by coagulation process but not nucleation growth.
      
For μ >amp;gt; μc the chargeless ring triggers the nucleation growth into the planar polar structure with line defects.
      
The available isothermal nucleation growth-rate equation has been modified for non-isothermal kinetic analysis.
      
Polynucleation model in two-dimensional nucleation growth theory is suggested as the most possible growth mechanism for these crystals in the present supersaturation range.
      
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Experiments were made on the growth of copper and iron whiskers by means of vapour reduction. The mechanism of growth was studied in order to find out the effective procedures of growing thick and long whiskers with very high strength. The growth of whiskers was found to be facilitated when the crystal structure of the grow-boat material is similar to that of the whisker. This led to the conclusion that the growth of whiskers is through a mechanism involving an axial screw dislocation. On the basis of observations...

Experiments were made on the growth of copper and iron whiskers by means of vapour reduction. The mechanism of growth was studied in order to find out the effective procedures of growing thick and long whiskers with very high strength. The growth of whiskers was found to be facilitated when the crystal structure of the grow-boat material is similar to that of the whisker. This led to the conclusion that the growth of whiskers is through a mechanism involving an axial screw dislocation. On the basis of observations on the mode of distribution and the direction of growth of the copper and iron whiskers grown on the wall of the boat, it was concluded that the growth of these whiskers proceeded from the tip. Furthermore, experiments showed that the cuprous (or ferrous) chloride vapour was preferentially reduced by hydrogen at the tip of the whisker, presumably because of the catalyzing action of the surface step produced at the tip by a screw dislocation.

进行了用蒸汽还原法生长铜须和铁须的实验。研究了须的生长机制,为的是找出能够生出又粗又长而强度又极高的金属须的有效措施。实验指出,当生长槽材料的晶体结构与生长须的金属的晶体结构相同时,可以促进须的生长。由此所得的结论是,须的生长是通过沿轴线的螺型位错的机制。观测了所生的铜须和铁须在生长槽上的分布和排列取向的各种方式,由此推论到这些须是由顶端生长的。此外,实验还指出,氯化亚铜(或亚铁)蒸汽是优先在须的顶端还原的,这可能是由于螺型位错在须顶端所产生的表面台阶对于这种还原有一种催化作用。 观测了直径50—120微米的大铜须的生长情况,发现了片状生长、堆垛生长和层状生长。这种特殊生长方式可能与一维和二维成核生长的交互更迭发生有关。讨论了通过适当选择和控制生长条件和方式的途径来获得基本上不含位错的大块晶体的可能性。

Computer simulation of the stationary domain in a Gunn diode with a positivedoping gradient near the anode was carried out.Two different kinds of stationary do-main modes were obtained,when the diffusion coefficient of the electrons is assumedto be constant,the high-field domain is initiated at cathode and propagates throughthe active region and finally becomes stationary at the anode.If the diffusion co-efficient is assumed to be dependent on the field of certain definite form,a high-fielddomain may nucleate...

Computer simulation of the stationary domain in a Gunn diode with a positivedoping gradient near the anode was carried out.Two different kinds of stationary do-main modes were obtained,when the diffusion coefficient of the electrons is assumedto be constant,the high-field domain is initiated at cathode and propagates throughthe active region and finally becomes stationary at the anode.If the diffusion co-efficient is assumed to be dependent on the field of certain definite form,a high-fielddomain may nucleate and grow at anode where it becomes stationary.In both casesthe device exhibits a static negative resistance at its terminals,whereas the currentwaveforms are different. The results of the simulation show that the stationary domain generally has thefollowing two features: a) At the edge of the domain near to the anode contact,thediffusion velocity is equal to,or greater than one half of the drift velocity, b) Thedistribution of the electron density is nearly flat in the most part of the domain. The results of the simulation also show that after a stationary domain has beenformed near the anode, further increase of the applied voltage over a certain thresholdvalue will turn the stationary domain into a transit domain again.The critical con-dition of this turnover is analyzed,the results show that the threshold voltage de-pends on the doping concentration in the homegeneous doping region,the doping gra-dient at the anode and the size of the notch near the cathode.

本文对Gunn 器件中掺杂梯度引起的静止畴进行计算机模拟.在器件的阳极端的掺杂存在一定的递增梯度的情况下,静止畴可能有两种产生方式:当扩散系数为常数时,畴在阴极形成,朝阳极渡越,最后静止于阳极,即渡越式的静止畴;当扩散系数与电场有某种一定的依赖关系时,畴可能在阳极成核、生长并静止于阳极,即非渡越式的静止畴.两者都导致一静态负阻特性,但电流波形不同. 从计算中归纳出掺杂梯度引起的静止畴的普遍特征:a)在靠近阳极一侧边缘处的扩散速度等于或大于漂移速度的二分之一,b)畴区内电子浓度分布趋于平坦. 计算中发现,当偏置电压高达一定值时,静止畴将转变为渡越畴.分析了这种转变的原因.并得出转变电压与均匀掺杂区的杂质浓度,阳极端的掺杂梯度及阴极端的凹口大小有关.

The conversion of magnetite to maghemite has been studied by Mb'ssbauer effect. That is a nucleation and growth process of γ-Fe2O3. The change of the concentration of Fe3O4 with time was determined by the change of magnetic moment in the oxidizing process. The chemical reaction formula, -dC/dt = mC3, is only appropriate for the starting stage of the oxidizing process.

根据穆斯堡尔谱分析,Fe_3O_4转变为γ-Fe_2O_3是γ-Fe_2O_3成核生长过程。根据氧化过程磁矩的变化确定Fe_3O_4浓度随时间的变化,-dc/dt=mc~3仅在氧化初始阶段适合。

 
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