助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   器件 的翻译结果: 查询用时:1.657秒
图标索引 在分类学科中查询
所有学科
无线电电子学
材料科学
化学
物理学
计算机硬件技术
自动化技术
仪器仪表工业
有机化工
金属学及金属工艺
更多类别查询

图标索引 历史查询
 

器件     
相关语句
  device
     Study on Si/SiGe Heterojunction Device
     Si/SiGe异质结器件研究
短句来源
     Study on the High-Power Cherenkov Device of Millimeter Wave
     高功率毫米波Cherenkov器件研究
短句来源
     Study of Novel Structural SOI Materials and Device Physics
     新结构SOI材料与器件物理研究
短句来源
     Study of the Reliability of Power Device with Lead-free Heat-sink Attachment
     功率器件无铅焊料焊接层可靠性研究
短句来源
     Research on MEMS Device Design,Packaging Process and Application
     MEMS器件设计、封装工艺及应用研究
短句来源
更多       
  devices
     Study on the Characteristies and Radiation Response of SiC Material and Devices
     SiC材料和器件特性及其辐照效应的研究
短句来源
     Research of High Frequency and Microwave Bipolar Power Devices
     双极高频、微波功率器件的研究
短句来源
     Design and Fabrication of Organic Light-Emitting Devices
     有机电致发光器件设计与制作
短句来源
     Theoretical and Experiment Study on Magnetized Plasma-filled Relativistic Microwave Devices
     磁化等离子体填充相对论微波器件的理论和实验研究
短句来源
     Study of Devices and Key Technology in Moems
     微光机电器件及其关键技术研究
短句来源
更多       
  device to
     We selected the S3C44B0X embedded microprocessor and configured image acquisition peripheral device to set up the hardware platform of machine vision system.
     以嵌入式微处理器S3C44B0X为中心,配置图像采集等外围器件,构建了机器视觉系统的硬件平台.
短句来源
     It was measured by experiment that the transmittivity of the device to YAG laser beam of double frequency with 532 nm wavelength was more then 60 % on the condition of a lower light intensity, and was gotten 2 %~3 % in a higher light intensity.
     实验测得该器件对较弱的532nm波长的YAG倍频激光透过率大于60%,对较强激光透过率小于2%~3%。
短句来源
     The Application of ISP Device to Digital I/O Circuit
     ISP器件在数字I/O电路中的应用
短句来源
     Applying PLD Device to the System of D/A Converter
     应用PLD器件实现高保真D/A转换
短句来源
     The paper designs humidity sensor measure system which uses TMS320LF2407A as the main control device to realize hardware circuit design;
     本文设计了湿度传感器的测试系统,使用TMS320LF2407A作为主控器件对硬件电路设计;
短句来源
更多       
  devices to
     Application of ispLSI1016 Devices to a Digital Frequency Meter
     ispLSI1016器件在数字频率计中的应用
短句来源
     WorldFIP communication part is designing with WorldFIP special-purpose device, utilizing 32 bits embedded ARM processor s3c4510b and some other supplementary devices to come to realize the network part of the gateway and memory system.
     WorldFIP现场总线通信部分是用WorldFIP专用器件来设计; 利用32bits嵌入式ARM处理器s3c4510b和其它一些辅助器件来实现网关的网络部分和存储系统。
短句来源
     We selected the S3C44B0X embedded microprocessor and configured image acquisition and motor driver peripheral devices to set up the hardware platform of robot vision system.
     以嵌入式微处理器S3C44B0X 为中心,配置图像采集和电机驱动等外围器件,构建了机器人视觉系统的硬件平台;
短句来源
     Through a practical example the paper introduces the main performance and peculiarity of FX_0 series programmable controller (PC) of the new kind and shows that this type of PC is very suitable for the automatic control of a single equipment or a small processing system and that it is one of the choosable key devices to realize mechanical and electrical integration.
     通过一实例,介绍了新型的FX_0系列可编程控制器(PC)的主要功能及特点,说明该系列的PC特别适合作单机或小系统的自动控制,是实现机电一体化可选择的关键器件之一。
短句来源
     The sensing properties of these devices to H 2S were measured in the temperature range from the room temperature to 150℃. The results indicate that all the devices are sensitive to H 2S and the Ag 2O-SnO 2/SiO 2/n-Si/Al MIS shows the best performance with high sensitivity and good selectivity.
     测试了 3种器件在室温到 15 0℃范围内对H2 S的敏感特性 ,三者对H2 S都有响应 ,其中Ag2 O -SnO2 /SiO2 /n -Si/AlMIS二极管对H2 S表现出最高的灵敏度和最好的选择性。
短句来源
更多       

 

查询“器件”译词为其他词的双语例句

 

查询“器件”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  device
A new molecular rectifier device and some research in its processing
      
The device with a sandwich structure shows good rectificative phenomena.
      
The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag).
      
The electrospinning equipment was designed in a new way, wherein the spinneret was combined with a gas jet device.
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
更多          
  devices
Therefore, this kind of polyurethane can be used for implanted medical devices with shape memory requirements.
      
Photovoltaic devices from CdSe nanocrystals and conjugated polymer composites
      
The preparation of CdSe nanospheres (ns-CdSe) and their application as electron acceptor in conjugated polymer photovoltaic devices are reported.
      
Photovoltaic devices were fabricated from the composites of ns-CdSe and poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) or poly(3-hexylthiophene) (P3HT).
      
The method can be used not only to calculate FSIQ in the complex power systems with simple or multiple faults, but also to analyze and evaluate the performance of the protective relays and automatic devices based on FSIQ.
      
更多          
  device to
A device is described that allows one to cool the sensitive element of a vacuum photoemissive device to the liquid-nitrogen temperature, thus improving the device resolution.
      
The use of the device to control the crucibleless zone melting process makes it possible to clarify the temperature field behavior on a liquid-phase surface.
      
A new version of TLC with a covered sorbent layer and without a free vapor volume is proposed along with a simple removable device to implement this version.
      
This study ascertains the conditions for the stationary nonconducting state of the device to become unstable in two types of transition to the oscillatory state.
      
The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field.
      
更多          
  devices to
Modeling of the conditions of x-ray tomography permits these devices to also be used to determine the safety of x-ray tomography at the atomic-molecular level.
      
Designing of Standard Samples for Determining the Sensitivity of Eddy-Current Devices to the Metal Inclusion Content in a Parama
      
The application of high-frequency acoustic devices to the enhancement of electronics saw an extraordinary growth in both Eastern and Western countries in the sixties and seventies.
      
Possibilities of the new method are demonstrated for the iron yttrium garnet films, the properties of which allow the thermal stability of frequency-selective MSW devices to be significantly improved.
      
It is shown that the proposed lateral emitter can be used in all microelectronic analogues of vacuum tubes, from microwave devices to flat displays, the device technology being substantially integrated.
      
更多          
  其他


In the present work, a theory of multiple bunching including the effect of space-charge is developed through the use of space-charge wave concept. The results contain Feenberg's kinematic theory as a special case and reveal characteristics of multiple bunching system that could not be obtained from the kinematic approach.The theory will find applications in microwave electronic devices and some examples of practical significance are discussed.

本文采用空间电荷波的观念,讨论了包括电子相互作用的多次聚束问题。所得结果,在电流接近以零为极限时,简化成费恩柏格(E.Feenberg)由运动学观点出发的结果。但是空间电荷效应的包括,显示了多次聚束系统一些不能由运动学方法得到的特徵。 本文的分析,可以应用在一系列的微波电子器件上。文中对这方面,也提供了一些具体的方向。

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained...

In this paper the relationships between small-signal h-parameters and elements of the natural equivalent circuit of the common emitter configuration of junction transistors are studied. From experimental results of h-parameters of two typieal alloyed PNP transistors (one 2N104 and one п-6 transistor) the relationship of h-parameters and elements of natural equivalent circuit vs operating frequency and d. c. operating condition (d.c. emitter current and d.e. collector voltage) are evaluated. Results thus obtained ace then compared with results obtained from analysis based on calculations using physical constants of the transistor. The explanation of the behavior of the reverse open-circuit voltage amplification factor, μb0, of the common emitter circuit is given in detail. Characteristics of μbo and properties of h22 (the output admittance with input open) are correlated. This paper gives complete information about h-parameters and natural equivalent circuit of two transistors, serving as an important reference for both device men and research workers on transistor circuits.

本文研究面结合型晶体管共发射极线路的小讯号h参数与自然等效线路中元件的关系。根据两种合金管(2N104及Ⅱ-6晶体管)h参数的实验结果求出h参数与自然等效线路元件随频率及随直流运用状态(直流发射极电流及直流集电极电压)的相互关系。对实验结果与根据晶体管物理构造分析计算的结果进行了比较。对开路反向电压放大系数μ_(bc)的现象给予详细分析,并求出μ_(bc)与开路输出导纳h_(22)的相互关系。两套晶体管的h参数及自然等效线路的完整资料可供晶体管器件设计及线路研究者的使用。

The rapidly rising field of solid-state electronics is reviewed. The characteristics of its development, the important. items at the present time and its future trend of development are examined and analyzed.

本文介绍了固体电子学发展的全貌,特别对国际上发展迅速的一些尖端问题和新的动向,作了概括性的说明。 文中首先讨论了固体电子学高速发展的客观形势和要求以及它在发展中的特色。把固体电子学的具体内容按固体现象、元件及应用加以概括,并且列举了较重要的电子学系统的固体元件化。 全文的重点是讨论固体电子学发展的四大尖端:超快速、超高频、超小型和量子无线电物理,以及一些新的动向。指出元件和线路的统一是整个发展中的特色。在这个趋势下,物理研究、材料器件制备和线路应用将进一步结合起来,其结果将导致新电子学技术向更高阶段迈进。 最后总结了目前发展中几个基本性的理论课题。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关器件的内容
在知识搜索中查有关器件的内容
在数字搜索中查有关器件的内容
在概念知识元中查有关器件的内容
在学术趋势中查有关器件的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社