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器件
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  device
    Preparation of SiCp/Al Composites and Electronic Device Fabrication
    SiCp/Al复合材料的制备及其器件的研制
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    APPLICATION OF CONDUCTING POLYMERS AS THE ELECTROCHROMIC DEVICE DIODE AND SENSOR
    导电高分子材料的应用——电显色器件,晶体管传感器等
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    Preparation of ZnS:Ag ̄+AC TFEL Device and Its Luminescent Characteristics
    ZnS:Ag~+ AC TFEL器件的制备及发光特性研究
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    Switch Device of HTSC
    高温超导体开关器件理论分析
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    The results show that in the optimum process,the nanocrystalline Ni-W film without crack can be obtained,and its stress is 230 MPa,hardness is 988 HV.In this way,Ni-W film may be widely applied in the manufacture of MEMS device and micro-molding.
    研究结果表明,在优化的工艺条件下,可获得应力为230 MPa、硬度高达988 HV、无裂纹的纳米晶Ni-W薄膜材料,为其在MEMS微器件、微模具制备上的应用提供了有效途径.
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  devices
    Study on Magnetorheological Transmission Technology and Devices
    磁流变传动技术及器件的研究
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    Study on Electrichromism of WO_3 Thin Films and Devices
    WO_3薄膜及器件的电致变色性能研究
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    EL Characters of Poly(p-phenylene vinylrene) and Its Application in Two-layer OTFEL Devices
    聚对苯乙炔的EL特性和在双层OTFEL器件中的应用
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    The wurtzite structure GaN1-xPx ternary alloys systems with a wide modulatory band gap, are useful for ultraviolet and infrared light emitting devices.
    纤锌矿结构GaN1-xPx三元合金具有宽的可调制带隙,可用于从紫外到红外的发光器件
    An Idea for Development of Intelligent Materials and Devices
    智能材料与器件的发展设想
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  “器件”译为未确定词的双语例句
    THERMOELECTRICAL STABILITY OF A NEW KIND OF ORGANIC PTC NOLINEAR ELECTRICALLY CONDUCTIVE MATERIAL AND ITS APPLIANCES
    新型有机PTC非线性导电材料及其器件的热电稳定性
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    The result show that the leakage current density of the thin film under +3V is lower than 10-9A/cm2, meeting the need for application.
    研究表明,Bi4Ti3O12薄度的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.
    Effects of Film Thickness on the Gas Sensitivity of SnO_2 Thick Film Sensors
    膜厚对SnO_2厚膜型气敏器件灵敏度的影响
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    Color-tuning LED based on Tb(acac)_2(AA)phen
    含Tb(acac)_2(AA)phen的变色电致发光器件
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    DNA as a template in directing the self-assembly of nanoparticles
    DNA模板纳米粒子自组装及其在纳米电子器件中的可能应用
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  device
A new molecular rectifier device and some research in its processing
      
The device with a sandwich structure shows good rectificative phenomena.
      
The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag).
      
The electrospinning equipment was designed in a new way, wherein the spinneret was combined with a gas jet device.
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
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  devices
Therefore, this kind of polyurethane can be used for implanted medical devices with shape memory requirements.
      
Photovoltaic devices from CdSe nanocrystals and conjugated polymer composites
      
The preparation of CdSe nanospheres (ns-CdSe) and their application as electron acceptor in conjugated polymer photovoltaic devices are reported.
      
Photovoltaic devices were fabricated from the composites of ns-CdSe and poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) or poly(3-hexylthiophene) (P3HT).
      
The method can be used not only to calculate FSIQ in the complex power systems with simple or multiple faults, but also to analyze and evaluate the performance of the protective relays and automatic devices based on FSIQ.
      
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Applications in the latching devices require the microwave ferrites with better temperature stability and hysteresis properties.This article deals with the preparation of the YGd Mn IG materials and investigates the improvement of the properties just mentioned.The effects of the Gd and Mn substitutions and of the control of the technological conditions on the properties of the materials are discussed.

在闭锁式器件的应用中对微波铁氧体材料提出了有较好的温度稳定性和磁滞性能的要求。本文研制了YGdMnIG材料,提高其温度稳定性和磁滞性能,并对掺Gd,掺Mn对性能影响,工艺条件的控制等问题进行了讨论。

Objective.Using CZ method,the growing silicon monocrystals are always accompanied by increasing carbon.In this respect,the mechanism of carbon increasing has not been perfectly clarified and proved theoretically and experimentally so far,even though there are already some explanations.This article is written with the intention to discuss the carbon contamination mechanism based on experimental investigations about suppressing carbon contaminant and thcrmodynamic analysis so as to make an approach to the the...

Objective.Using CZ method,the growing silicon monocrystals are always accompanied by increasing carbon.In this respect,the mechanism of carbon increasing has not been perfectly clarified and proved theoretically and experimentally so far,even though there are already some explanations.This article is written with the intention to discuss the carbon contamination mechanism based on experimental investigations about suppressing carbon contaminant and thcrmodynamic analysis so as to make an approach to the the production of low-carbon monocrystal silicon.Thermodynamic analysis and experiments show that the carbon contained in silicon crystal comes mainly from CO due to the reaction between quartz crucible and its graphite suppotter and that between oxidative components in atmosphere (e.g.O2 and SiO etc) and graphite wares.Amounts of carbon contaminants in silicon crystal caused by these two reactions are about the same.Taking the form of CO,carbon comes into melted silicon.In test,surfaces of graphite ware were coated with SiC,Mo,ZrO2 or pyrolytic graphite and the quartz shield was replaced by a graphite one,thus providing 1~3×10-2 torr vacuum in furnace.As raw material,300g polysilicon was put into furnace for the growth of monocrystals by means of CZ method.Vacuum purity is considered as having great influence on carbon contamination and that higher vacuum provides the significant decrease in carbon content in silicon crystal.Average carbon content in the tail-ends of growing silicon crystal [C]=3×106cm-3,45% less than that by unimproved process.Tab.1 Results of unimproved test.[C]S1:carbon content in Si crystalSupporter,heater graphite Shield graphite-Mo.Tab.2 Test results.Coating: supporter-SiC,heater-pyrolytic graphiteShield-quartz-Mo.Tab.3 Test results.Coating: supporter-Mo,heater-pyrolytic graphiteShield-quartz-Mo.Tab.4 Test results.Coating: supporter and heater-ZrO2 Shield-quartz-Mo.Tab.5 Test results.Supporter coated with Mo,graphite heater and quartz-Mo shield.Schematic of crystal growth system Fig.1-pull rod; 2-graphite cover 3-quartz shield; 4-Mo shield; 5-heater coated with pyrolytic graphite or ZrO2; 6-quartz crucible; 7-supporter coated with Mo,SiC or ZrO25 8-crystal; 9-melted silicon.Fig.2 Sampling positions for measuring C content by means of infrad absorption

在真空下用CZ法生长硅单晶时,经热力学分折和实验研究证明,硅单晶中碳的主要来源除石墨托与石英坩埚间的反应生成CO外,气氛中氧化组元(O_2,SiO等)亦与石墨器件反应生成CO。碳以CO形式进入融硅,使硅单晶中碳含量增加。本研究采用了对石墨器件表面涂SiC、Mo、ZrO_2和热解石墨等方法,并用石英保温筒代替石墨保温筒。在真空度为1~3×10~(-2)托下,投料300g,用CZ法生长硅单晶,其晶体尾部的碳量平均值,比原工艺晶体中碳的平均含量降低了45%。

The effects of the environmental conditions, such as temperature (—78—100℃), 100℃ aging, vibration, collision, shock and acceleration, on the DC and AC magnetic properties of five types of zero-magnetostrictive Co-base amorphous alloys have been stadied. These five alloys are chosen from that of low loss at high frequency, high initial permeability, square loop, high excursion range of induction and constant permeability respectively. All results were compared with five similar crystalline permalloys. The possible...

The effects of the environmental conditions, such as temperature (—78—100℃), 100℃ aging, vibration, collision, shock and acceleration, on the DC and AC magnetic properties of five types of zero-magnetostrictive Co-base amorphous alloys have been stadied. These five alloys are chosen from that of low loss at high frequency, high initial permeability, square loop, high excursion range of induction and constant permeability respectively. All results were compared with five similar crystalline permalloys. The possible causes of various effects on magnetic properties were analyzed. Their suitability for various uses has also been dicussed.

本文研究了高初始磁导率、高频低损耗、高矩形比、低剩磁和恒导磁等5种类型不同性能特点的零磁伸Co基非晶合金在环境温度(-78—100℃)、时效(100℃)以及冲击、振动、碰撞、加速度等条件下直流磁性、磁滞回线、铁芯损耗等变化,并与类似性能的五类晶态Permalloy作了对比,分析了影响不同的可能原因,指出所研究的各类Co基非晶合金作为功率器件和磁导率器件的应用前景。

 
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