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器件     
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  device
    Study on Si/SiGe Heterojunction Device
    Si/SiGe异质结器件研究
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    Study on the High-Power Cherenkov Device of Millimeter Wave
    高功率毫米波Cherenkov器件研究
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    Study of Novel Structural SOI Materials and Device Physics
    新结构SOI材料与器件物理研究
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    Study of the Reliability of Power Device with Lead-free Heat-sink Attachment
    功率器件无铅焊料焊接层可靠性研究
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    Research on MEMS Device Design,Packaging Process and Application
    MEMS器件设计、封装工艺及应用研究
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  devices
    Study on the Characteristies and Radiation Response of SiC Material and Devices
    SiC材料和器件特性及其辐照效应的研究
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    Research of High Frequency and Microwave Bipolar Power Devices
    双极高频、微波功率器件的研究
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    Design and Fabrication of Organic Light-Emitting Devices
    有机电致发光器件设计与制作
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    Theoretical and Experiment Study on Magnetized Plasma-filled Relativistic Microwave Devices
    磁化等离子体填充相对论微波器件的理论和实验研究
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    Study on the Improvement of the Whole Performance of Power Devices
    提高功率器件整体性能的研究
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  device to
    Using ispPAC Device to Realize Biquad Control System
    使用在系统可编程模拟器件实现二阶控制系统
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    Applying PLD Device to the System of D/A Converter
    应用PLD器件实现高保真D/A转换
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    The Application of ISP Device to Digital I/O Circuit
    ISP器件在数字I/O电路中的应用
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    Application of ISP device to digital eleceronic technology experiments
    ISP器件在数字电子技术实验中的应用
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    Research on Using SAW Device to Realize Small Wave Conversion
    用声表面波器件实现小波变换的研究
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  devices to
    This paper deals with multiple fault detection for nonlinear resistive Inetworks utilizing linear equivelent models of nonlinear devices to account the consequences of operating point drift,and deriving linear equation of multiple fault diagnosis of analog networks to achieve fault location or fault identification.
    应用非线性器件的等效线性比模型讨论了非线性电阻网络的多故障诊断,可计及工作点漂移的影响,并导出模拟网络多故障诊断方程,达到故障定位和定值.
短句来源
    The maximum transconductance is 0.36 mS/mm and the effective electron mobility is estimated to be 14cm 2/V·s. However, it also shows that there is remarkable parasitic resistance effect for these devices to need reduction.
    器件漏电流都有很好的饱和特性 ,最大跨导为 0 .36 m S/ mm ,沟道电子迁移率约为 14cm2 / V.s,但串联电阻效应明显。
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    This paper introduces a method which uses a single-chip microcomputer and a small quantity of peripheral devices to produce CCD driving signal.
    介绍一种利用单片机软件及少量的外围器件产生CCD驱动信号的方法.
短句来源
    The simulation results indicate, deep-trench junction termination with certain width, depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95% of the ideal value.
    结果表明:具有一定宽度、深度且填充绝缘介质的深阱结终端结构,阻止了结的横向扩展,并能将器件的雪崩击穿电压提高到理想值的95%以上。
短句来源
    The localized carrier lifetime control method has been considered as an effective technology in power devices, to increase the turn-off time and improve the tradeoff relationship between turn-off time and forward voltage.
    局域寿命控制是一种提高器件的关断速度,且改进t_(off)~V_F折衷关系的有效方法。 尽管有文献对PIN、IGBT等器件的局域寿命控制技术进行了研究,但对于局域寿命控制下电导调制器件的稳态和瞬态理论模型,国际上鲜见报道。
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      device
    A new molecular rectifier device and some research in its processing
          
    The device with a sandwich structure shows good rectificative phenomena.
          
    The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag).
          
    The electrospinning equipment was designed in a new way, wherein the spinneret was combined with a gas jet device.
          
    In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
          
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      devices
    Therefore, this kind of polyurethane can be used for implanted medical devices with shape memory requirements.
          
    Photovoltaic devices from CdSe nanocrystals and conjugated polymer composites
          
    The preparation of CdSe nanospheres (ns-CdSe) and their application as electron acceptor in conjugated polymer photovoltaic devices are reported.
          
    Photovoltaic devices were fabricated from the composites of ns-CdSe and poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) or poly(3-hexylthiophene) (P3HT).
          
    The method can be used not only to calculate FSIQ in the complex power systems with simple or multiple faults, but also to analyze and evaluate the performance of the protective relays and automatic devices based on FSIQ.
          
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      device to
    A device is described that allows one to cool the sensitive element of a vacuum photoemissive device to the liquid-nitrogen temperature, thus improving the device resolution.
          
    The use of the device to control the crucibleless zone melting process makes it possible to clarify the temperature field behavior on a liquid-phase surface.
          
    A new version of TLC with a covered sorbent layer and without a free vapor volume is proposed along with a simple removable device to implement this version.
          
    This study ascertains the conditions for the stationary nonconducting state of the device to become unstable in two types of transition to the oscillatory state.
          
    The following points are made: (i) Bulk recombination is important in the response of the device to an applied magnetic field.
          
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      devices to
    Modeling of the conditions of x-ray tomography permits these devices to also be used to determine the safety of x-ray tomography at the atomic-molecular level.
          
    Designing of Standard Samples for Determining the Sensitivity of Eddy-Current Devices to the Metal Inclusion Content in a Parama
          
    The application of high-frequency acoustic devices to the enhancement of electronics saw an extraordinary growth in both Eastern and Western countries in the sixties and seventies.
          
    Possibilities of the new method are demonstrated for the iron yttrium garnet films, the properties of which allow the thermal stability of frequency-selective MSW devices to be significantly improved.
          
    It is shown that the proposed lateral emitter can be used in all microelectronic analogues of vacuum tubes, from microwave devices to flat displays, the device technology being substantially integrated.
          
    更多          


    The rapidly rising field of solid-state electronics is reviewed. The characteristics of its development, the important. items at the present time and its future trend of development are examined and analyzed.

    本文介绍了固体电子学发展的全貌,特别对国际上发展迅速的一些尖端问题和新的动向,作了概括性的说明。 文中首先讨论了固体电子学高速发展的客观形势和要求以及它在发展中的特色。把固体电子学的具体内容按固体现象、元件及应用加以概括,并且列举了较重要的电子学系统的固体元件化。 全文的重点是讨论固体电子学发展的四大尖端:超快速、超高频、超小型和量子无线电物理,以及一些新的动向。指出元件和线路的统一是整个发展中的特色。在这个趋势下,物理研究、材料器件制备和线路应用将进一步结合起来,其结果将导致新电子学技术向更高阶段迈进。 最后总结了目前发展中几个基本性的理论课题。

    The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the phase...

    The advances of solid state negative-resistance devices, such as tunnel diodes, variable reactance semiconductor diodes used in parametric forms, lead to the interests of the study of periodically loaded travelling type distributed amplifiers. This paper gives a detailed analysis on the transmission characteristics of this type of microwave amplifier. The analysis includes the study of the phase equation, gain equation, the frequency-phase characteristics, the pass band vs stop band relationships and the phase velocity and group velocity characteristics. A detailed analysis on the travelling wave type semiconductor diode parametric amplifier is also given. Important universal curves and design conditions are also included for ready references.

    由于各种固体负阻器件的进展,例如隧道二极管,参量应用的变容二极管等,从而引起了对具有周期性负载行波式分布放大器的研究。 本文对这一类微波放大器的传输特性进行了详细分析,对其主要性能的分析包括:相位方程,增益方程,频率-相位关系,通带及阻带,相速及群速等等。文中给出了变容二极管行波式参量放大器的分析;还给出了重要的通用曲线及设计要点以供参考。

    Experimental investigations of the effects of dielectric loading on an x- band field displacement isolator are presented. The dielectric materials used are the (1) polystyrene (∈=1. 7) and (2) mica (∈=5. 0). The material is placed adjacent to the resistance strip on the ferrite slab. The variations of the forward and reverse attenuations with the (1) ferrite slab position in the rectangular waveguide,(2) applied magnetic field, (3) thickness of the dielectric slab, (4) height of the dielectric slab, and (5)...

    Experimental investigations of the effects of dielectric loading on an x- band field displacement isolator are presented. The dielectric materials used are the (1) polystyrene (∈=1. 7) and (2) mica (∈=5. 0). The material is placed adjacent to the resistance strip on the ferrite slab. The variations of the forward and reverse attenuations with the (1) ferrite slab position in the rectangular waveguide,(2) applied magnetic field, (3) thickness of the dielectric slab, (4) height of the dielectric slab, and (5) operating frequency, are studied. Results prove that the performance of the isolator can be improved by the dielectric loading. Both the bandwidth and the figure of merit are inc- reased. The reverse attenuation incseases 14 db while the forword attenuation increases only 0. 1 db.

    本文叙述介质加载对三公分波段场移式隔离器性能的改进的一些初步实验结果。这里所用的介质是:(1)聚苯乙稀(ε_e=1.7),(2)云母片(ε_e=5.0)。我们研究了: 1.加介质后,正向衰减α~+和反向衰减α~-与铁氧体薄片在波导中的位置d的关系, 2.介质厚度t_e和最佳位置d_x的关系, 3.α~+和α~-与磁化场H_0的关系, 4.α~+和α~-与t_0的关系, 5.α~+和α~-与介质高度h_e的关系, 6.α~+和α~-与工作频率f的关系。实验结果表明:将一高电介常数和低损耗的介貭,加在铁氧体薄片附有吸收层的一侧,可以改善隔离器的性能。在我们的最佳工作情况下,α~+只增加了0.1分贝左右,而α~-却提高了4到14分贝。在驻波比ρ<1.1,反向衰减α~->25分贝,正向衰减α~+<0.5分贝的范围内,器件的频带宽度增加了8%。

     
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