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delta掺杂
相关语句
  delta-doping
     Studies on electrical properties of delta-doping p-GaN films
     Delta掺杂制备p-GaN薄膜及其电性能研究
短句来源
  “delta掺杂”译为未确定词的双语例句
     Then the relation of the thickness of cap layer,the carrier density in channel,and the density of delta doped ion on the barrier height Φw of quantum well in channel layer are deduced. Also the relation of the density of delta doped ion,the thickness of gate oxide layer and the thickness of cap layer on the threshold voltage and the relation of the gate voltage on the carrier density in channel are derived.
     确定了纵向结构的CAP层厚度、沟道层载流子面密度、DELTA掺杂浓度以及量子阱阱深之间的关系 ,得出了阈值电压与DELTA掺杂浓度、栅氧化层厚度及CAP层厚度之间的关系 ,还得出了栅压与沟道载流子面密度、栅氧化层厚度及CAP层厚度之间的关系 .
短句来源
  相似匹配句对
     Studies on electrical properties of delta-doping p-GaN films
     Delta掺杂制备p-GaN薄膜及其电性能研究
短句来源
     Carbon Doped SiGe Heterojunction Bipolar Transistors
     C掺杂SiGe HBT
短句来源
     Impurity Doping Phosphorus by Electron Beam
     电子束掺杂
短句来源
     Delta Sigma Converters Simplified
     Delta Sigma转换器的简化
短句来源
     Delta waves for elastic dynamic system
     弹性动力学方程组的Delta
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  delta-doping
Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography
      
The potential is investigated of FIB lithography for implantation delta-doping in order to produce desired arrangements of quantum wires and dots.
      
IPL resistless lithography as a method for delta-doping of monocrystalline semiconductors by Al and Sb implantation
      
The potential is assessed of ion projection lithography (IPL) as a method for Al and Sb implantation delta-doping of silicon single crystals in order to produce prescribed arrangements of quantum dots and wires.
      
The use of a vertical device design in combination with delta-doping layers increases the performance of these devices.
      
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This paper developed a simple GeSi MOSFET device model,and based on this model,we analyzed the influence of GeSi MOSFET longitudinal structure on device performance.Then the relation of the thickness of cap layer,the carrier density in channel,and the density of delta doped ion on the barrier height Φw of quantum well in channel layer are deduced.Also the relation of the density of delta doped ion,the thickness of gate oxide layer and the thickness of cap layer on the threshold voltage and the relation of the...

This paper developed a simple GeSi MOSFET device model,and based on this model,we analyzed the influence of GeSi MOSFET longitudinal structure on device performance.Then the relation of the thickness of cap layer,the carrier density in channel,and the density of delta doped ion on the barrier height Φw of quantum well in channel layer are deduced.Also the relation of the density of delta doped ion,the thickness of gate oxide layer and the thickness of cap layer on the threshold voltage and the relation of the gate voltage on the carrier density in channel are derived.After these analyses,we get several valuable results for our further research.Because of the assumptions in this model,these results are not precise but instructional.In order to get precise results,we simulated the structures of GeSi PMOSFET and GeSi NMOSFET by MEDICI.

为了研究器件参数对GeSiMOSFET器件性能的影响 ,本文在建立一个简单的GeSiMOSFET的器件模型的基础上 ,对GeSiMOSFET的纵向结构进行了系统的理论分析 .确定了纵向结构的CAP层厚度、沟道层载流子面密度、DELTA掺杂浓度以及量子阱阱深之间的关系 ,得出了阈值电压与DELTA掺杂浓度、栅氧化层厚度及CAP层厚度之间的关系 ,还得出了栅压与沟道载流子面密度、栅氧化层厚度及CAP层厚度之间的关系 .并且在此基础上得出了一些有意义的结果 .为了更细致、精确地进行分析 ,我们分别对GeSiPMOSFET和GeSiNMOSFET在MEDICI上做了模拟 .

Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delta-doping. It is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the carrier concentration was decreased by the pre-purge.

采用Delta掺杂技术制备了p型氮化镓薄膜,并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析,发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高,说明Delta掺杂可有效抑制缺陷,并对缺陷抑制机理进行了讨论;最后,对掺杂前的预通氨过程作了深入的研究,结果发现,预通氨对掺杂不益.

 
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