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溅射率
相关语句
  sputtering rate
     The sputtering rate increases with the increase of the cathode voltage and the temperature. [
     随着阴极溅射电压的增加 ,阴极合金元素溅射率增加 ; 并且随着阴极温度升高 ,阴极溅射率也随之增加
短句来源
     The transient sputtering rate of μs-pulse mode is 24.4 μg/s. mm2 for brass samples.
     以黄铜为样品,瞬短脉冲辉光放电的瞬时溅射率达到24.4μg/s·mm2。
短句来源
     The content of lower sputtering rate elements Mo and Nb increases while the higher sputtering rate elements Ni and Cr decrease in the surface layer, and the intermetallic phases P and Laves containing high concentration of Mo and Nb precipitate in surface layer.
     Mo ,Nb等低溅射率元素在阴极表面富集 ,Ni,Cr等高溅射率元素在阴极表面贫化 ,使阴极表面发生相变 ,形成含Mo ,Nb较高的金属间化合物析出相P相和Laves相。
短句来源
     It has the characteristic of working on higher pressure and lower voltage and having a high cathode sputtering rate.
     它具有工作气压高,维持电压低,阴极溅射率高等特点。
短句来源
     Specific methods involved in the optimization of sputtering process include:selecting a proper TiN thickness to reduce stresses; using a smaller sputtering rate to suppress the damages to gate dielectric and adopting a higher N 2/Ar ratio during the TiN sputtering process to further nitride the gate dielectric.
     实验选取了合适的 Ti N厚度来减小应力 ,以较小的 Ti N溅射率避免溅射过程对栅介质的损伤 ,并采用了较高的 N2 / Ar比率在 Ti N溅射过程中进一步氮化了栅介质 .
短句来源
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  sputtering yield
     Au sputtering yield with Ar+ ions of 300-1200 eV is measured by backscattering.
     本文用背散射方法测定了300—1200eV不同能量的氩离子对金的溅射率
短句来源
     But under high sputtering power and low working gas pressure, the atoms' sputtering yields, transporting efficiencies and energies at arriving the substrate's surface all increase, the sputtering yield of Ga atom is larger than that of P atom, whereas its transporting efficiency is smaller than that of P atom, hence the depositing rate of GaP film is high and stoichiometric film with low absorbance is deposited, which is advantageous to depositing large-thickness GaP film.
     功率较大、气压较小时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均增大,Ga的溅射率大于P的、但其输运效率小于P的,使GaP薄膜的沉积速率增大、薄膜中Ga与P的含量接近化学计量比,GaP薄膜的吸收降低,因此有利于制备厚度较大的GaP薄膜.
短句来源
     The results showed that under low sputtering power and high working gas pressure, the sputtering yields and transporting efficiencies of Ga and P atoms as well as their energies at arriving the substrate's surface are small, the sputtering yield and transporting efficiency of Ga atom are both larger than those of P atom, hence the depositing rate of GaP film is low, the content of Ga in the film is larger than that of P, which makes the film have high absorbance in IR waveband.
     功率较小、气压较大时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均较小,Ga的溅射率及输运效率均大于P的,使薄膜沉积速率较低、薄膜中Ga的含量大于P的,GaP薄膜产生较大吸收.
短句来源
     We pointed out that g=f · cosθo where θo is the optimum incidence angle of ions at which sputtering yield Y(θo) reaches the maximum.
     其中,f和g是待定参数,其值由实验决定。 g=f·cosθ_0,θ_0是元素溅射率Y(θ_0)达到最大值时的离子束最佳入射角。
短句来源
     Simulation of ion implantation and computation of sputtering yield with Monte Carlo method
     离子注入和溅射率的蒙特卡罗模拟计算
短句来源
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  spattering ratio
     Study on Spattering Ratio and Absorptivity of W and Mo by Ion Penetrating
     离子渗钨-钼锯条溅射率与吸收率的研究
短句来源
     According to the statistics of five handred thousands saw blade production,it can be known that the atomic average spattering ratio of W and Mo is 0.095.and average absorptivity of the saw blade tooth is 26 %.
     通过100炉次共计50万支离子渗W、Mo手用锯条生产,计算出源极W、Mo原子的平均溅射率为0.095。 W、Mo原子被锯条齿部表面的平均吸收率为26%。
短句来源
  “溅射率”译为未确定词的双语例句
     Yamamura obtained an empirical formula of relative sputtering yields for monoato-mic targets bombarded by low energy ions at oblique incidence as follows: y(θ)=Y(θ)/ Y(0°) = tf·exp{-g(t-1)}, t=sec0 where f and g are fitting parameters depending on the measured curve of sputtering yields.
     Yamamura指出:若能量为E的离子束倾斜轰击多晶元素靶,则原子相对溅射率y(θ)=Y(θ)/Y(0°)随离子束入射角θ变化的曲线可表示为含二个参数的经验公式:y(θ)=t~f·exp{g-(t-1)},t=secθ。
短句来源
     Atomic sputtering yields of film compositions from a Y-Ba-Cu-O target bombarded by argon ions have been calculated, and there exists preferred effect with smaller copper atomic sputteiing yield.
     理论计算了氩离子束溅射Y-Ba-CU-O靶的组分原子溅射率,得出了溅射过程中存在Cu原子溅射率偏低的“择优溅射”效应。
短句来源
     Linearity of the calibration curves was rather good after correction of sputter rate, with correlation coefficients of above 0.99 for most elements.
     经溅射率校正后的工作曲线线性较好,大部分元素的相关系数在0.99以上。
短句来源
     More attentions are paid to high Z materials because of their high melting point and low sputter rate, but such materials remain the problems of brittleness to which is harmful for their application.
     高Z材料因其高熔点和低溅射率近年来受到越来越多的关注,但是难熔材料的脆性等问题仍然是这类材料应用的一大障碍。
短句来源
     Modification of Sigmund Equation for Sputtering Yields
     Sigmund元素溅射率公式的修正
短句来源
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  sputtering rate
Effect of resonance charge exchange between argon ions on the effective sputtering rate in a magnetron discharge
      
Dependence of the ion sputtering rate on the light-induced change in the work function of heterophase semiconductors
      
Molecules of SiO and NO gases form in the surface layer, whose subsequent desorption increases the SiO2 sputtering rate.
      
The difficulties associated with the variations of sputtering rate and ionization probability in multiphase systems will also be discussed.
      
A good lateral resolution of about 1 μm and the variability of the sputtering rate over 3 orders of magnitude allow an optimization of the measurement parameters with respect to the sample geometry.
      
更多          
  sputtering yield
The mechanisms behind the influence of the thermal atomic vibrations on the sputtering yield of surface metallic clusters are discussed.
      
The dependence of the sputtering yield on the energy and angle of incidence of the ions are determined and the character of the surface relief formed during the sputtering is investigated.
      
From the experimental data, dependences of the sputtering yield of these materials on the incidence angle and ion energy have been obtained and the surface relief patterns produced by target etching have been studied.
      
It has been shown that the dependence on energy of the sputtering yield for GaP, GaAs, and InP can be adequately described by the Haffa-Switkovski formula for binary materials and Yudin's approximation for elemental targets.
      
Sputtering of GaSb and InSb proceeds in the surface layer recrystallization mode, and the sputtering yield agrees with calculations based on Onderlinden's model.
      
更多          


A new empiric formula of sputtering yields for monoatomic polyerystal solids bom-barded by light and heary ions at normal incidence is presented.It can be derived asfollows: Firstly,a modified sputtering formula is obtained by replacing the sublimationheat Us for the solids in Sigmund equation with the threshold energy E_(th) for ion-targetcombinations.Secondly,the modified formula is multiplied by a calibration factor,g(E)=1-(E_(th)/E)(1/2) suggested by Matsunami.Where E_(th)=U_5·exp(γ)/γ,γ=4M/(1+M)~2 and M=M_2/M_1.M_1...

A new empiric formula of sputtering yields for monoatomic polyerystal solids bom-barded by light and heary ions at normal incidence is presented.It can be derived asfollows: Firstly,a modified sputtering formula is obtained by replacing the sublimationheat Us for the solids in Sigmund equation with the threshold energy E_(th) for ion-targetcombinations.Secondly,the modified formula is multiplied by a calibration factor,g(E)=1-(E_(th)/E)(1/2) suggested by Matsunami.Where E_(th)=U_5·exp(γ)/γ,γ=4M/(1+M)~2 and M=M_2/M_1.M_1 and M_2 are the atomic weights of incident ions and target atomsrespectively.Finally,the calculation results show:The sputtering yield of He~+ andAr~+ at 600 eV on normal incidence evaluated using the empiric formula is accurate wi-thin an error of ±20%.But Sigmund equation is always overestimated at low energiesby a factor nearly distributed from 2 to 25.

本文给出氦、氩离子法向轰击多晶元素靶时,原子溅射率Y_o随离子能量E变化的经验公式.采用下面二个步骤,可以导出这个公式.首先,把Sigmund 溅射率公式(1)中的表面升华能U_s改为离靶组合的溅射阈能E_(th). 其次,再把上式乘以Matsunami提出的低能修正因子g(E).另外,我们还导出了适用于轻、重离子的溅射阈能经验公式E_(th)=U_s·exp(r)/r.其中:r=4M/(1+M)~2,M=M_2/M_1是靶原子的相对原子量.计算结果表明:对于低能离子(E≤1keV)而言,由经验公式算出的溅射率Y_o与实验值Y之间的相对误差不超过20%.但是,低能下的Sigmund理论溅射率Y_s约为实验值的二至二十五倍.由此可知:经验溅射率公式(30)基本上是成功的.

Yamamura obtained an empirical formula of relative sputtering yields for monoato-mic targets bombarded by low energy ions at oblique incidence as follows: y(θ)=Y(θ)/ Y(0°) = tf·exp{-g(t-1)}, t=sec0 where f and g are fitting parameters depending on the measured curve of sputtering yields.We pointed out that g=f · cosθo where θo is the optimum incidence angle of ions at which sputtering yield Y(θo) reaches the maximum. An analytical expression for θo was derived and its physical meaning was discussed in the paper.Finally,...

Yamamura obtained an empirical formula of relative sputtering yields for monoato-mic targets bombarded by low energy ions at oblique incidence as follows: y(θ)=Y(θ)/ Y(0°) = tf·exp{-g(t-1)}, t=sec0 where f and g are fitting parameters depending on the measured curve of sputtering yields.We pointed out that g=f · cosθo where θo is the optimum incidence angle of ions at which sputtering yield Y(θo) reaches the maximum. An analytical expression for θo was derived and its physical meaning was discussed in the paper.Finally, Yamamura formula could be written with the unique parameter f. The calculated results showed the equation given was accurate within a relative error of ± 12 % for targets Si and Ni bombarded by ions Ar and H in the low-energy range.

Yamamura指出:若能量为E的离子束倾斜轰击多晶元素靶,则原子相对溅射率y(θ)=Y(θ)/Y(0°)随离子束入射角θ变化的曲线可表示为含二个参数的经验公式:y(θ)=t~f·exp{g-(t-1)},t=secθ。其中,f和g是待定参数,其值由实验决定。g=f·cosθ_0,θ_0是元素溅射率Y(θ_0)达到最大值时的离子束最佳入射角。 我们导出了离子束的最佳入射角拟合公式(8),并讨论了它的物理意义。因而,含二个参数的Yamamura经验公式(1)变成只含一个参数的原子相对溅射率公式(4)。其中,待定参数f的值由解析公式(21)给出。

Au sputtering yield with Ar+ ions of 300-1200 eV is measured by backscattering. The backscattering spectra are treated by two methods(energy loss method and area method). The results show that Au sputtering yield measured by RBS is in agreement with G. K, Wehner's result by weight method. The relation between our experimental sputtering yield and ion energy is y∝E0.4. This energy relation gives a good agreement with P. Sigmund's theory when m = 0.3.

本文用背散射方法测定了300—1200eV不同能量的氩离子对金的溅射率。实验测得的背散射能谱用两种不同的方法(能量损失和面积法)处理,结果表明,用背散射法测得金的溅射率与G.K.Wehner用称重法测定的数据很接近,其与入射离子能量的关系为Y∝E~(0.4)。

 
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